Solid-state imaging device, drive method thereof and electronic apparatus

ABSTRACT

A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/902,664, filed Sep. 2, 2022, which is a continuation of U.S. patentapplication Ser. No. 16/932,544, filed Jul. 17, 2020, now U.S. Pat. No.11,489,001, which is a continuation of U.S. patent application Ser. No.16/228,244, filed Dec. 20, 2018, now U.S. Pat. No. 10,748,958, which isa continuation of U.S. patent application Ser. No. 14/082,832, filedNov. 18, 2013, now U.S. Pat. No. 10,199,427 which is a divisional ofU.S. patent application Ser. No. 12/480,351, filed Jun. 8, 2009, nowU.S. Pat. No. 8,614,759, which claims priority to Japanese PatentApplication Serial Nos. JP 2008-150963, JP 2008-285907, JP 2008-285908and JP 2008-285909, filed in the Japan Patent Office on Jun. 9, 2008,Nov. 6, 2008, Nov. 6, 2008 and Nov. 6, 2008, respectively, the entiredisclosures of which are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a solid-state imaging device including pluralphotodiodes in a unit pixel area, a drive method thereof and anelectronic apparatus using the solid-state imaging device.

2. Description of the Related Art

Color separation in a CCD image sensor or a CMOS image sensor as asolid-state imaging device is realized by mainly using color filters. Inthe image sensor using color filters, a color filter of one kind ismounted with respect to one pixel, and three pixel circuits principallyhaving color filters of red, green and blue are arranged so as to beadjacent to one another. Accordingly, light which can be received in onepixel is only one color corresponding to the color filter in a narrowsense. Therefore, in the image sensor using color filters, colors aregenerated by using information of light incident on adjacent pixels onwhich color filters of different colors are mounted.

Therefore, in the image sensor using color filters, a false color inwhich a color generated at an arbitrary pixel is different from a colorof light which has been actually incident on the pixel occurs.Additionally, for example, in a case of a red color filter, incidentlights of green and blue are absorbed by the color filter and do notreach a receiving portion by using the color filter. Therefore, morethan two thirds of the incident light amount is lost. The lost of theincident light amount occurs also in green and blue color filters.

Accordingly, in order to utilize the incident light amount efficientlyas well as to prevent occurrence of false colors, a method of separatingcolors by forming plural photodiodes in a pixel in the depth directionof a substrate has been developed.

In JP-A-2002-513145 (Patent Document 1), for example, a method ofseparating colors is described, in which a three-layer structure of ann-type semiconductor layer 3102, a p-type semiconductor layer 3104 andan n-type semiconductor layer 3106 is formed in a p-type Si substrate3100, and blue, green and red lights are taken out by photoelectricallyconverting light in the order from a shallow-depth layer as shown inFIG. 4 .

In the method, blue, green and red signals are outputted to the outsidefrom terminals connected to respective layers on a surface of the Sisubstrate 3100. This utilizes the length of wavelengths andcharacteristics of light absorption in the depth direction. According tothis, color separation in one pixel becomes possible, which can preventoccurrence of false colors. Therefore, a low-pass filter is notnecessary. Furthermore, since the color filters are not used, red, greenand blue colors which have different wavelengths are incident on theunit pixel. Accordingly, the loss of the light amount is reduced.

A CMOS-type solid-state imaging device is configured by arranging pluralpixels in a necessary pattern, in which one pixel includes a photodiodeand plural MOS transistors. The photodiode is a photoelectric conversionelement which generates and accumulates signal charges in accordancewith the light receiving amount, and plural MOS transistors are elementsfor transferring signal charges from the photodiode. In the pixels,signal charges are obtained by illuminated light and the obtained signalcharges are outputted as pixel signals from respective pixels. The pixelsignals outputted as the above are processed by a given signalprocessing circuit and outputted to the outside as video signals.

In recent years, reduction of the pixel size and improvement of asaturation charge amount (Qs) and sensitivity are addressed in order toimprove characteristics of the solid-state imaging device. InJP-A-2005-223084 (Patent Document 2), a solid-state imaging device isdescribed, which uses a charge readout transistor having a vertical gateelectrode formed in the depth direction of a semiconductor substrate inorder to realize the reduction of pixel size without reducing thesaturation charge amount (Qs) and sensitivity.

FIG. 1A shows a schematic cross-sectional configuration of a solid-stateimaging device in a related art which is described in Patent Document 2,and FIG. 18 shows a planar configuration thereof.

As shown in FIG. 1A and FIG. 1B, the solid-state imaging device in therelated art includes a p-type semiconductor substrate 203, a photodiodePD included in each pixel formed in the semiconductor substrate 203 anda charge-reading transistor Tr.

The photodiode PD includes a p-type high concentration impurity region(p+ region) 206 formed on the surface side of the semiconductorsubstrate 203, an n-type high concentration impurity region (n+ region)205 formed adjacent to the region 206 in the depth direction toward theback side and an n-type low concentration impurity region (n-region)204. A primary pn junction “j0” included in the photodiode PD is formedby the p+ region 206 and the n+ region 205. As shown in FIG. 1B, thephotodiode PD is formed in a photodiode region 260 in the semiconductorsubstrate 203, which is demarcated by a pixel isolation region 210 ineach pixel.

The charge readout transistor Tr is a MOS transistor for transferringsignal charges accumulated in the photodiode PD. The charge-readingtransistor Tr includes a floating diffusion region 202 provided on thesurface side of the semiconductor substrate 203 and a vertical gateelectrode 201 formed in the semiconductor substrate 203 from the surfaceside in the depth direction through a gate insulating film 218. Thevertical gate electrode 201 touches the floating diffusion region 202through the gate insulating film 218 as well as is formed to reach aposition deeper than the pn junction “j0” of the photodiode PD. In thevertical gate electrode 201 included in the charge readout transistorTr, the gate insulating film 218 is formed at a groove portion formed tohave the depth reaching the pn junction “j0” of the photodiode PD fromthe surface side of the semiconductor substrate 203. The columnar-shapedvertical gate electrode 201 is formed by filling the groove on the gateinsulating film 218.

In the charge readout transistor Tr, a transfer channel is formed in thedepth direction of the semiconductor substrate 203 so as to reach thefloating diffusion region 202 from the pn junction “j0” included in thephotodiode PD along the vertical gate electrode 201.

The solid-state imaging device is a back-illuminated solid-state imagingdevice illuminating light from the back side of the semiconductorsubstrate 203 as shown in FIG. 1B, in which the vertical gate electrode201 included in the charge readout transistor Tr is formed at thecentral position of the photodiode PD.

In the solid-state imaging device having the above configuration, lightincident from the back side is photoelectrically converted by thephotodiode PD and signal charges are accumulated in the photodiode PD.Then, the accumulated signal charges in the photodiode PD aretransferred through the transfer channel by applying positive voltage tothe vertical gate electrode 201 of the charge readout transistor Tr,read out to the floating diffusion region 202 formed on the surface ofthe semiconductor substrate 203.

As described above, the device has the configuration in which thephotodiode PD is formed in the depth direction of the semiconductorsubstrate 203 and signal charges accumulated in the photodiode PD areread by the vertical gate electrode 201. Accordingly, when the pixelsize is reduced, the saturation charge amount (Qs) and sensitivity arenot reduced. Additionally, MOS transistors and wiring layers are notformed on the light illumination side due to the back-illuminated type,therefore, an opening area can be widely secured.

On the other hand, FIG. 2A and FIG. 2B show a schematic cross-sectionalconfiguration and a planar configuration of relevant parts of asolid-state imaging device in a related art in which the vertical gateelectrode is not applied. In FIG. 2A and FIG. 2B, same symbols are givento portions corresponding to FIG. 1A and FIG. 1B and repeatedexplanation is omitted. As shown in FIG. 2A, when a normal planar gateelectrode 301 which is not the vertical gate electrode is used, the gateelectrode 301 is formed on an upper surface of the semiconductorsubstrate 203 at an outer peripheral portion of the photodiode region260 in which the photodiode PD is formed through the gate insulatingfilm 218.

The saturation charge amount (Qs) of the photodiode PD is in proportionwith capacitance of the pn junction “j0” included in the photodiode PD.Since the impurity concentration is commonly high in the vicinity of thecenter of the photodiode PD, capacitance in a unit area is high,conversely, capacitance is low at end portions of the photodiode PDwhich are pixel edges. That is, in the photodiode PD shown in FIG. 1A,1B and FIG. 2A, 2B, capacitance is high in portions surrounded by dashedlines (vicinity of the center of the photodiode region 260) and thesaturation charge amount (Qs) per a unit area is also high.

According to the above, since the gate electrode 301 is formed in theouter peripheral portion of the photodiode region 260 in the exampleshown in FIG. 2A and FIG. 2B, the saturation charge amount (Qs) of thephotodiode PD is not lost.

However, when the vertical gate is arranged at the center of thephotodiode like the example shown in FIG. 1A and FIG. 1B, the verticalgate electrode 201 is buried in the portion in which capacitance is highin the photodiode PD. In this case, there is fear that the saturationcharge amount (Qs) is lost in the area including the region where thevertical gate electrode 201 is formed and the periphery thereof.

When the vertical gate electrode 201 and the floating diffusion region202 are arranged at the center of the photodiode PD included in thepixel as shown in FIG. 1A and FIG. 1B, it is difficult to share thefloating diffusion region 202 among plural pixels, which makes thereduction of pixel size harder. Additionally, charges accumulated in thephotodiode PD are transferred to the floating diffusion region 202formed on the surface of the semiconductor substrate 203 through thetransfer channel of the charge readout transistor Tr. Therefore, ifthere is a defect in the gate portion of the charge readout transistorTr, it is anticipated that transfer failure of charges occurs or thatgeneration of large dark current is caused. As the defect in this case,there are defects generated by processing a deep groove portion formedat the time of forming the vertical gate electrode 201 or an interfacestate.

The solid-state imaging device is roughly divided into anamplification-type solid-state imaging device typified by a CMOS(Complementary Metal Oxide Semiconductor) image sensor a CMOS(Complementary Metal Oxide Semiconductor) image sensor by a CCD (ChargeCoupled Device) image sensor. There solid-state imaging devices arewidely used for a digital still camera, a digital video camera and thelike. In recent years, as the solid-state imaging device mounted onmobile apparatuses such as a cellular phone with a camera and a PDA(Personal Digital Assistant), the CMOS image sensor is widely used inthe light of power consumption, in which power supply voltage is low.

A CMOS solid-state imaging device is proposed (refer to Patent Document2), in which a photoelectric conversion element (photodiode) is formedinside a p-type silicon semiconductor substrate and a vertical transfertransistor is formed to realize the reduction of pixel size withoutlowering the saturation charge amount (Qs) and the sensitivity. FIG. 3shows a cross-sectional configuration of a relevant part of a pixel inthe above CMOS solid-state imaging device.

A CMOS solid-state imaging device 1111 is a back-illuminated solid-stateimaging device which illuminates light from the back of the substrate.In the CMOS solid-state imaging device 1111, pixel transistors includedin each pixel, in this example, a transfer transistor Tr1, a resettransistor Tr2 and an amplification transistor Tr3 are formed on thefront side of a semiconductor substrate 1112. A photodiode PD is formedbelow these pixel transistors. The photodiode PD includes an n-typesemiconductor region 1113 having a high concentration impurity region(n+ region) 1113A and a low concentration impurity region (n region)111313 to be charge accumulation regions and a p-type semiconductorregion (p+ region) 1121 having high concentration impurity on thesurface side thereof inside the semiconductor substrate 1112.

The vertical transfer transistor Tr1 is configured by including acolumnar transfer gate electrode 1116 which is buried in a grooveportion 1114 reaching the inside of the n-type high concentrationimpurity region (n+ region) 1113A of the photodiode PD from the surfaceof the semiconductor substrate 1112 in the depth direction through agate insulating film 1115. On the surface of the semiconductor substrate1112, an n-type source/drain region 1117 to be a floating diffusion (FD)40 is formed so as to touch the gate insulating film 1115. The transfergate electrode 1116 of the vertical transfer transistor Tr1 formed at aposition corresponding to the center of a unit pixel 1131, namely, thecenter of the photodiode PD. A p-type semiconductor region (p+ region)1121 having high concentration impurity is formed so as to surround thegate insulating film 1115 formed in the high concentration impurityregion 1113A of the photodiode PD.

The reset transistor Tr2 includes a pair of n-type source/drain regions1117, 1118 on the surface side of the semiconductor substrate 1112 and areset gate electrode 1123 formed through the gate insulating film. Theamplification transistor Tr3 includes a pair of n-type source/drainregions 1119, 1120 on the surface side of the semiconductor substrate1112 and a reset gate electrode 1124 formed through the gate insulatingfilm. Further, a multilevel-wiring layer in which plural layers ofwirings 1126 is formed on the semiconductor substrate 1112 in whichthese pixel transistors (Tr1, Tr2 and Tr3) are formed through aninterlayer insulating layer 1125. On the back of the semiconductorsubstrate 1112, color filters and on-chip micro lenses at positionscorresponding to respective pixels thereabove are formed, though notshown. A numeral 1130 represents a pixel isolation region. A numeral1131 represents a unit pixel.

Other descriptions concerning the back-illuminated solid-state imagingdevice are also disclosed in JP-A-2003-31785 (Patent Document 3).

As a solid-state imaging device, a CMOS solid-state imaging device isknown. In the CMOS solid-state imaging device, a photodiode and pluralMOS transistor forms one pixel. The solid-state imaging device havingplural pixels is configured by arranging plural pixels in a necessarypattern. The photodiode is a photoelectric conversion element whichgenerates and accumulates signal charges in accordance with the lightreceiving amount, and the plural MOS transistors are elements fortransferring signal charges from the photodiode.

In recent years, reduction of pixel size is proceeding in the CMOSsolid-state imaging device. However, since the photodiode and plural MOStransistors such as a charge readout transistor are arranged in the sameplane in each pixel region in the CMOS solid-state imaging device, areasfor respective elements are necessary on the plane, which tends toincrease an area of one pixel. Accordingly, it is difficult to reducethe pixel size, and when the size is reduced, an area of the photodiodeis also reduced, which causes problems such as the lowering of thesaturation charge amount and the lowering of sensitivity.

In Patent Document 1, the configuration in which the pn junction formedin the high concentration regions of the photodiode is provided insidethe semiconductor substrate is described. In this case, the channelportion of the charge readout transistor for reading signal charges isformed in the depth direction of the semiconductor substrate, and thebottom portion of the gate electrode of the reading transistor and thegate insulating film is formed at the position deeper than the depth ofthe pn junction. Such configuration is applied in Patent Document 2,thereby maintaining the area of the photodiode large and preventing thelowering of the saturation charge amount even when the pixel area isreduced.

However, in the solid-state imaging device of Patent Document 2, thepotential which can be completely transferred with respect to onephotodiode in which signal charges are accumulated in one pixel isfixed, and it is difficult to increase the saturation charge amount (Qs)more than a fixed amount. That is, it is difficult to be a configurationin which reduction of pixel size and improvement of the saturationcharge amount (Qs) are realized at the same time.

SUMMARY OF THE INVENTION

It is desirable to provide a solid-state imaging device and anelectronic apparatus using the solid-state imaging device in whichincrease of the saturation charge amount (Qs) and improvement ofsensitivity can be realized as well as having high transfer efficiencyof signal charges.

In the above solid-state imaging device 1111, the vertical transfertransistor Tr1 is arranged in the center of the pixel to thereby allowdistances between the periphery of the photodiode PD and the transfergate electrode 1116 are the same and make the complete transfer ofsignal charges easy. However, the transfer gate electrode 1116 mayinhibit formation of the photodiode PD. Therefore, it is difficult toallow a portion of the transfer gate electrode 1116 to be formed as thephotodiode PD, which reduces the saturation charge amount (Qs) per aunit area, as a result, a configuration will be disadvantageous forpixel characteristics.

In the solid-state imaging device 1111, an effective channel length isdetermined by the distance between the photodiode PD and the floatingdiffusion FD (n-type source/drain region 1117) However, in theconfiguration, n+ region 1113A exists below the transfer gate electrodein the state of touching the electrode, therefore, there are fears thatwhite defects caused by dark current due to GIDL (Gate Induced DrainLeakage) occur and that pixel characteristics are reduced.

In the solid-state imaging device 1111, a p-region 1122 is formed so asto surround the transfer gate electrode 1116 on the surface of then-typesemiconductor region (n+ region) 1113A of the photodiode PD as shown inFIG. 3 . The p-region 1122 makes the charge accumulation amount of thephotodiode PD to maintain as well as makes charge transfer by thetransfer gate electrode 1116 easy. However, when the region 1122 is“p−”, it is difficult to secure a transfer path actually.

In the solid-state imaging device 1111, the p-region 1122 is formedbetween the gate insulating film 1115 attached to the transfer gateelectrode 1116 and the n-type semiconductor region (n+ region) 1113A ofthe photodiode PD, thereby suppressing occurrence of dark current due todefects in the photodiode PD and the like. However, it is necessary tosuppress dark current occurring due to defects caused by damagesgenerated when the silicon semiconductor substrate 1112 is selectivelyetched for forming the transfer gate electrode 1116, and the p-region1122 is insufficient.

In the solid-state imaging device 1111, a channel region at sides of thetransfer gate electrode between then-type source/drain region 1117 asthe floating diffusion and the photodiode PD is a p-type region.However, it is difficult to completely transfer signal chargesaccumulated in the photodiode PD in the configuration. In thesolid-state imaging device, it is necessary to increase the saturationcharge amount as well as to improve charge transfer even when the pixelsize is reduced.

It is desirable to provide a solid-state imaging device and amanufacturing method thereof, in which the saturation charge amount (Qs)is increased and the transfer gate interface is adjusted. It is alsodesirable to provide an electronic apparatus using the solid-stateimaging device.

It is further desirable to provide a solid-state imaging device and adrive method of the solid-state imaging device, in which the pixel sizecan be reduced as well as the saturation charge amount (Qs) is increasedto improve sensitivity. It is also desirable to provide an electronicapparatus using the solid-state imaging device.

However, in the invention utilizing the length of wavelengths andcharacteristics of absorption of light in the depth direction as inPatent Document 1, it is necessary that the photodiode whichphotoelectrically converts light of red having a long wavelength isformed in the depth approximately 2 μm from the surface of the Sisubstrate 3100. Accordingly the distance with respect to an outputterminal on the surface of the Si substrate 3100 is long, therefore, itis extremely difficult to completely transfer charges accumulated in thephotodiode, which may cause residual images. Additionally, light isincident from the direction of the surface of the Si substrate 3100 andcharges generated by photoelectric conversion are accumulated in thephotodiode formed by the well-layers of several layers. In this case,the end of the photodiode reaches the surface of the Si substrate 3100,and the depth of a pn junction at that portion and the depth of a pnjunction at the center of the photodiode differ from each other. Thiswill be a factor of color mixture as well as a factor of generatingnoise on the surface of the Si substrate 3100.

There is a need for providing a solid-state imaging device and a drivemethod thereof, which prevents false colors, residual images, noise andcolor mixture as well as improves an open area ratio of pixels andsensitivity. It is also desirable to provide an electronic apparatususing the solid-state imaging device.

A solid-state imaging device according to an embodiment of the inventionincludes the following configuration. First, a buried photodiode formedin the depth direction of a semiconductor substrate is included.Additionally, a vertical gate electrode is included, which is formed ata peripheral portion of a photodiode region in which the photodiodeincluded in a pixel is formed from a surface of the semiconductorsubstrate to the depth reaching the photodiode through a gate insulatingfilm. Also, a floating diffusion region accumulating signal charges readfrom the photodiode is included. The vertical gate electrode and thefloating diffusion region make up a charge readout transistor.

Here, the “photodiode region” indicates a region in which the photodiodeis formed when the photodiode formed in the semiconductor substrate isviewed in plan.

In the solid-state imaging device according to the embodiment of theinvention, when potential for reading is applied to the vertical gateelectrode, potential gradient in the photodiode region is changed so asto become deeper toward the floating diffusion region. Accordingly,signal charges accumulated in the photodiode are transferred along thepotential gradient.

An electronic apparatus according to another embodiment of the inventionincludes an optical lens, a solid-state imaging device and a signalprocessing device which processes output signals from the solid-stateimaging device. The solid-state imaging device includes, first, a buriedphotodiode formed in the depth direction of the semiconductor substrate.Additionally, a vertical gate electrode is included, which is formed ata peripheral portion of a photodiode region in which the photodiodeincluded in a pixel is formed from a surface of the semiconductorsubstrate to the depth reaching the photodiode through a gate insulatingfilm. Also, a floating diffusion region accumulating signal charges readfrom the photodiode is included. The vertical gate electrode and thefloating diffusion region make up a charge readout transistor.

Here, the “photodiode region” indicates a region in which the photodiodeis formed when the photodiode formed in the semiconductor substrate isviewed in plan.

In the electronic apparatus according to the embodiment of theinvention, when potential for reading is applied to the vertical gateelectrode, potential gradient in the photodiode region is changed so asto become deeper toward the floating diffusion region in the solid-stateimaging device. Accordingly, signal charges accumulated in thephotodiode are transferred along the potential gradient.

A solid-state imaging device according to another embodiment of theinvention includes plural layers of photodiodes to be photoelectricconversion elements formed in the depth direction of a semiconductorsubstrate, a vertical transfer transistor channel direction of which isvertical with respect to the semiconductor substrate, an overflow pathconnecting second-conductive type semiconductor regions to be respectivecharge accumulation regions of the plural layers of photodiodes, and anion implantation region for adjusting a gate interface formed around atransfer gate portion of the vertical transfer transistor.

In the solid-state imaging device according to the embodiment of theinvention, plural layers of photodiodes are formed in the depthdirection of the semiconductor substrate, and at the time ofaccumulating charges, when any of the photodiodes reaches the saturationcharge amount, overflowed signal charges are accumulated in thephotodiode which has not been saturated through the overflow path.Accordingly, the saturation charge amount (Qs) is increased. Since theion implantation region for adjusting the gate interface is formedaround the vertical transfer gate portion, the configuration in whichresidual images are not generated as well as occurrence of white defectsare suppressed can be realized. When the ion implantation region is, forexample, the second-conductive type semiconductor region, chargetransfer efficiency is further improved, and when the region is thefirst-conductive type semiconductor region, occurrence of dark currentcan be suppressed as well as occurrence of white defects can besuppressed.

A solid-state imaging device according to another embodiment of theinvention includes a photodiode to be a photoelectric conversion elementburied in a semiconductor substrate, a vertical transfer transistorarranged at the end of a pixel and channel direction of which isvertical with respect to the semiconductor substrate in plural pixeltransistors and an ion implantation region which has a necessaryconductive type, which is formed around a transfer gate portion of thevertical transfer transistor.

In the solid-state imaging device according to the embodiment, both thecase in which one layer photodiode to be the photoelectric conversionelement buried in the semiconductor substrate is formed and the case inwhich plural layers of photodiodes are formed are included. In bothcases, the vertical transfer transistor is arranged at the end of thepixel, therefore, the area of the photodiode can be widely secured andthe saturation charge amount (Qs) is increased. When the ionimplantation region having a necessary conductive type around thevertical transfer gate portion is, for example, the second-conductivetype semiconductor region, the charge transfer efficiency is furtherimproved. When the ion implantation region having a necessary conductivetype is the first-conductive type semiconductor region, occurrence ofdark current can be suppressed as well as occurrence of white defectscan be suppressed.

A method of manufacturing a solid-state imaging device according toanother embodiment of the invention includes the steps of forming plurallayers of photodiodes in the depth direction of a semiconductorsubstrate and an overflow path connecting second-conductive typesemiconductor regions to be charge accumulation regions of respectivephotodiodes, forming an ion implantation region in the depth directionof the semiconductor substrate so as to touch the overflow path, forminga groove portion stretching in the depth direction of the semiconductorsubstrate in the ion implantation region, and forming a gate insulatingfilm in an inner wall surface of the groove portion as well as forming atransfer gate electrode of a vertical transfer transistor so as to beburied into the groove.

In the method of manufacturing the solid-state imaging device accordingto the embodiment of the invention, after the plural layers ofphotodiodes and the overflow path are formed, the ion implantationregion is formed, then, the groove portion for burying the transfer gateelectrode in the ion implantation region is formed. Accordingly, the ionimplantation region which abuts on the inner wall surface of the groovecan be formed. In addition, the vertical transfer gate portion facingthe overflow path can be formed, sandwiching the ion implantation regiontherebetween.

A method of manufacturing a solid-state imaging device according toanother embodiment of the invention includes the steps of forming an ionimplantation region in the depth direction of a semiconductor substrate,forming a groove portion stretching in the depth direction of thesemiconductor substrate in the ion implantation region, forming plurallayers of photodiodes in the depth direction of a semiconductorsubstrate and an overflow path connecting second-conductive typesemiconductor regions to be charge accumulation regions of respectivephotodiodes, which touches the ion implantation region, and forming agate insulating film in an inner wall surface of the groove portion aswell as forming a transfer gate electrode of a vertical transfertransistor so as to be buried into the groove.

In the method of manufacturing the solid-state imaging device accordingto the embodiment of the invention, after the ion implantation region isformed and the groove portion for burying the transfer gate electrode inthe ion implantation region is formed, plural layers of photodiodes andthe overflow path are formed. Accordingly, the ion implantation regionwhich abuts on the inner wall surface of the groove can be formed. Inaddition, the vertical transfer gate portion facing the overflow pathcan be formed, sandwiching the ion implantation region therebetween.

An electronic apparatus according to another embodiment of the inventionincludes an optical lens, a solid-state imaging device and a signalprocessing circuit which processes output signals of the solid-stateimaging device. The solid-state imaging device includes plural layers ofphotodiodes to be optical conversion elements formed in the depthdirection of the semiconductor substrate, a vertical transfer transistorchannel direction of which is vertical with respect to the semiconductorsubstrate, an ion implantation region formed around the transfer gateportion of the vertical transfer transistor and an overflow pathconnecting the second-type semiconductor regions to be respective chargeaccumulation regions of the plural photodiodes.

A solid-state imaging device according to another embodiment of theinvention includes plural photodiodes formed in different depths in asemiconductor substrate, each having a junction surface between afirst-conductive type impurity region and a second-conductive impurityregion. Additionally, a vertical transistor having a gate insulatingfilm, a reading gate electrode, a transfer channel and a floatingdiffusion region is included. The charge readout gate electrode isformed in the depth direction from the surface of the semiconductorsubstrate through the gate insulating film. The transfer channeltransfers signal charges read from plural photodiodes. The floatingdiffusion region is a region in which signal charges transferred throughthe transfer channel are accumulated. The solid-state imaging deviceaccording to the embodiment of the invention further includes anoverflow path between the plural photodiodes and between the photodiodesand the floating diffusion region at the time of accumulating charges inthe photodiodes.

In the solid-state imaging device according to the embodiment, signalcharges exceeding the saturation charge amount of one photodiode at thetime of accumulating signal charges are transferred to the otherphotodiode or the floating diffusion region through the overflow path.Since plural photodiodes are included, the whole saturation chargeamount can be increased. Further, plural photodiodes are formed in thedepth direction of the semiconductor substrate, the pixel size can bereduced.

In a drive method of a solid-state imaging device according to anotherembodiment of the invention, first, signal charges are accumulated inthe photodiodes by irradiating light to plural photodiodes formed in thedepth direction of the semiconductor substrate. Then, signal chargesexceeding the saturation charge amount in one photodiode at the time ofaccumulating signal charges are transferred to another photodiode or thefloating diffusion region through the overflow path. When theaccumulation of signal charges is completed, signal charges accumulatedin plural photodiodes are transferred to the floating diffusion regionsat the same time.

In the drive method according to the embodiment of the invention, signalcharges exceeding the saturation charge amount of one photodiode at thetime of accumulating signal charges are transferred to anotherphotodiode or the floating diffusion region. Accordingly, the saturationcharge amount of the whole photodiode is improved and the dynamic rangecan be increased.

An electronic apparatus according to another embodiment of the inventionincludes an optical lens, a solid-state imaging device and a signalprocessing circuit. The solid-state imaging device includes pluralphotodiodes formed in different depths in a semiconductor substrate,each having a junction surface between a first-conductive type impurityregion and a second-conductive impurity region. Also, a verticaltransistor having an gate insulating film, a reading gate electrode, atransfer channel and a floating diffusion is included. The chargereadout gate electrode is formed in the depth direction from the surfaceof the semiconductor substrate through the gate insulating film. Thetransfer channel transfers signal charges read from plural photodiodes.The floating diffusion region is a region in which signal chargestransferred through the transfer channel are accumulated. Thesolid-state imaging device according to the embodiment of the inventionfurther includes an overflow path between the plural photodiodes andbetween the photodiodes and the floating diffusion region at the time ofaccumulating charges in the photodiodes.

The signal processing circuit processes output signals from thesolid-state imaging device.

In the electronic apparatus according to the embodiment of theinvention, signal charges exceeding the saturation charge amount of onephotodiode are transferred to the other photodiode or the floatingdiffusion region through the overflow path at the time of accumulatingsignal charges in the solid-state imaging device. In addition, sinceplural photodiodes are provided, the whole saturation charge amount canbe increased.

A solid-state imaging device according to another embodiment of theinvention includes plural photodiodes formed in different depths in aunit pixel area of a substrate and plural vertical transistors. Theplural vertical transistors are transistors for reading signal chargesobtained by photoelectric conversion in the plural photodiodes. In theplural vertical transistors, gate portions thereof are formed in thedepth direction from one face side of the substrate so as to be formedin depths corresponding to respective plural photodiodes.

In the solid-state imaging device according to the embodiment of theinvention, plural photodiodes are formed in the unit pixel area,therefore, plural colors are read from the unit pixel area. Also, thegate portions of the vertical transistors are formed in the depthscorresponding to respective plural photodiodes, therefore, all signalcharges of target photodiodes are read. Respective gate portions havedifferent gate lengths, respectively.

An electronic apparatus includes a solid-state imaging device, anoptical lens system and a signal processing device which processesoutput signals of the solid-state imaging device.

Particularly, the solid-state imaging device includes plural photodiodesformed in different depths and plural vertical transistors in the unitpixel area of the substrate. The plural vertical transistors aretransistors for reading signal charges obtained by photoelectricconversion in the plural photodiodes. In the plural verticaltransistors, gate portions thereof are formed in the depth directionfrom one face side of the substrate so as to be formed in depthscorresponding to respective plural photodiodes.

In the electronic apparatus according to the embodiment of theinvention, light incident into the solid-state imaging device throughthe optical lens system is photoelectrically converted in pluralphotodiodes in the unit pixel area. Signal charges obtained byphotoelectric conversion are read by the vertical transistors formed inthe depths of the photodiodes to form images.

According to the embodiments of the invention, it is possible to obtaina solid-state imaging device in which the increase of the saturationcharge amount (Qs) and improvement of sensitivity are realized. Alsoaccording to the embodiments of the invention, it is possible to improvethe saturation charge amount (Qs) and sensitivity, as a result, anelectronic apparatus having higher image quality can be obtained.

In the solid-state imaging device and the method of manufacturing thesame according to the embodiments of the invention, it is possible toprovide a solid-state imaging device in which charge transfer efficiencyis further improved by increasing the saturation charge amount (Qs) in aunit pixel or occurrence of white defects is suppressed by suppressinggeneration of dark current.

In the electronic apparatus according to the embodiments of theinvention, the solid-state imaging device according to the embodiment ofthe invention is included, therefore, it is possible to obtain theelectronic apparatus in which dynamic range is improved and which hashigher image quality.

According to the embodiments of the invention, it is possible to obtaina solid-state imaging device in which the increase of the saturationcharge amount (Qs) and improve of sensitivity are realized as well asthe pixel size reduction is easy. Also according to the embodiments ofthe invention, it is possible to obtain an electronic apparatus havinghigher image quality by using the solid-state imaging device in whichthe saturation charge amount (Qs) and the sensitivity can be improved aswell as the pixel size reduction can be realized.

In the solid-state imaging device and the drive method according to theembodiments of the invention, false colors, residual images, noise andcolor mixture can be reduced as well as sensitivity can be improved. Inaddition, color filters and a low-pass filter are not necessary.

In the electronic apparatus according to the embodiments of theinvention, it is possible to obtain images in which false colors,residual images, noise and color mixture are reduced as well assensitivity is improved.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A and FIG. 16 are a schematic cross-sectional configuration viewand a planar configuration view of a solid-state imaging device in arelated art;

FIG. 2A and FIG. 2B are a schematic cross-sectional configuration viewand a planar configuration view of a solid-state imaging device in arelated art;

FIG. 3 is a configuration view of a relevant part showing an example ofa solid-state imaging device in a related art;

FIG. 4 is a schematic cross-sectional configuration view of a photodiodeused in an imaging device in a related art;

FIG. 5 is the whole configuration view of a solid-state imaging deviceaccording to Embodiment 1 to Embodiment 56 of the invention;

FIG. 6 is a schematic plan view of a relevant part of solid-stateimaging device according to Embodiment 1 of the invention;

FIG. 7 is a schematic cross-sectional configuration view taken along A-Aline of FIG. 6 ;

FIG. 8 is a view showing potential gradient in contour lines in thesolid-state imaging device according to Embodiment 1 of the invention;

FIG. 9 is a schematic plan view of a relevant part of a solid-stateimaging device according to Embodiment 2 of the invention;

FIG. 10 is a schematic cross-sectional configuration view taken alongB-B line of FIG. 9 ;

FIG. 11 is a schematic plan view of a relevant part of a solid-stateimaging device according to Embodiment 3 of the invention;

FIG. 12 is a schematic cross-sectional configuration view taken alongC-C line of FIG. 11 ;

FIG. 13 is a view showing potential gradient in contour lines in thesolid-state imaging device according to Embodiment 3 of the invention;

FIG. 14 is a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 4 of the invention;

FIG. 15 is a schematic cross-sectional configuration view taken alongD-D line of FIG. 14 ;

FIG. 16 is a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 5 of the invention;

FIG. 17 is a schematic cross-sectional configuration view taken alongE-E line of FIG. 16 ;

FIG. 18 is a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 6 of the invention;

FIG. 19 is a schematic cross-sectional configuration view taken alongF-F line of FIG. 18 ;

FIG. 20 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 7 of the invention;

FIG. 21 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 8 of the invention;

FIG. 22 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 9 of the invention;

FIG. 23 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 10 of the invention;

FIG. 24 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 11 of the invention;

FIG. 25 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 12 of the invention;

FIG. 26 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 13 of the invention;

FIG. 27 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 14 of the invention;

FIG. 28 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 15 of the invention;

FIG. 29 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 16 of the invention;

FIG. 30 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 17 of the invention;

FIG. 31 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 18 of the invention;

FIG. 32 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 19 of the invention;

FIG. 33 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 20 of the invention;

FIG. 34 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 21 of the invention;

FIG. 35 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 22 of the invention;

FIG. 36 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 23 of the invention;

FIG. 37 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 24 of the invention;

FIG. 38 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 25 of the invention;

FIG. 39 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 26 of the invention;

FIG. 40 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 27 of the invention;

FIG. 41 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 28 of the invention;

FIG. 42 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 28 of the invention;

FIG. 43 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 30 of the invention;

FIG. 44 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 31 of the invention;

FIG. 45 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 32 of the invention;

FIG. 46 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 33 of the invention;

FIG. 47 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 34 of the invention;

FIG. 48 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 35 of the invention;

FIG. 49 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 36 of the invention;

FIG. 50 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 37 of the invention;

FIG. 51 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 38 of the invention;

FIG. 52 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 39 of the invention;

FIG. 53 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 40 of the invention;

FIG. 54 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 41 of the invention;

FIG. 55 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 42 of the invention;

FIG. 56 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 43 of the invention;

FIG. 57 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 44 of the invention;

FIG. 58 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 45 of the invention;

FIG. 59 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 46 of the invention;

FIG. 60 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 47 of the invention;

FIG. 61 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 48 of the invention;

FIG. 62 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 49 of the invention;

FIG. 63 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 50 of the invention;

FIG. 64 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 51 of the invention;

FIG. 65 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 52 of the invention;

FIG. 66 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 53 of the invention;

FIG. 67 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 54 of the invention;

FIG. 68 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 55 of the invention;

FIG. 69 a schematic planar configuration view of a relevant part of asolid-state imaging device according to Embodiment 56 of the invention;

FIG. 70 is a schematic cross-sectional configuration view taken alongA-A line of FIG. 69 ;

FIG. 71 is an electronic apparatus according to Embodiment 57 of theinvention;

FIG. 72 is an equivalent circuit showing an example of a unit pixel inFIG. 5 :

FIG. 73 is a configuration view of a relevant part of a solid-stateimaging device according to Embodiment 58 of the invention;

FIG. 74 is a manufacturing process view (No. 1) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 75 is a manufacturing process view (No. 2) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 76 is a manufacturing process view (No. 3) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 77 is a manufacturing process view (No. 4) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 78 is a manufacturing process view (No. 5) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 79 is a manufacturing process view (No. 6) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 80 is a manufacturing process view (No. 7) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 81 is a manufacturing process view (No. 8) showing an example of amanufacturing method of a solid-state imaging device according to anembodiment of the invention;

FIG. 82 is a manufacturing process view (No. 1) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 83 is a manufacturing process view (No. 2) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 84 is a manufacturing process view (No. 3) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 85 is a manufacturing process view (No. 4) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 86 is a manufacturing process view (No. 5) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 87 is a manufacturing process view (No. 6) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 88 is a manufacturing process view (No. 7) showing another exampleof a manufacturing method of a solid-state imaging device according toan embodiment of the invention;

FIG. 89 is a configuration view of a relevant part of a solid-stateimaging device according to Embodiment 59 of the invention;

FIG. 90 is a configuration view of a relevant part of a solid-stateimaging device according to Embodiment 60 of the invention;

FIG. 91 is a configuration view of a relevant part of a solid-stateimaging device according to Embodiment 61 of the invention;

FIG. 92 is a cross-sectional view taken along A-A line of FIG. 91 ;

FIG. 93 is an equivalent circuit showing an example of a joint pixel ofa solid-state imaging device according to Embodiment 62 of theinvention;

FIG. 94 is a configuration view of a relevant part of a solid-stateimaging device according to Embodiment 63 of the invention;

FIG. 95 is a cross-sectional configuration view of a solid-state imagingdevice according to Embodiment 64 of the invention;

FIG. 96A to FIG. 96D are configuration views when seeing planes alongrespective cross sections of the solid-state imaging device according toEmbodiment 64;

FIG. 97 is an impurity concentration distribution graph of thesolid-state imaging device according to Embodiment 64;

FIG. 98 is a view when the solid-state imaging device according toEmbodiment 64 is applied to a back-illuminated type;

FIG. 99A to FIG. 99E are views schematically showing potentials andaccumulated signal charges when seen in p-p cross section of FIG. 95 :

FIG. 100 shows another example of the solid-state imaging deviceaccording to Embodiment 64;

FIG. 101 is a cross-sectional configuration view of a solid-stateimaging device according to Embodiment 65 of the invention;

FIG. 102 is a schematic cross-sectional configuration view of asolid-state imaging device according to Embodiment 67 of the invention;

FIG. 103 is an equivalent circuit of a unit pixel of the solid-stateimaging device according to Embodiment 67;

FIG. 104A is a schematic cross-sectional configuration view of asolid-state imaging device according to Embodiment 69 and FIG. 1046 is aschematic configuration view showing the whole solid-state imagingdevice;

FIG. 105 is a schematic cross-sectional configuration view of asolid-state imaging device according to Embodiment 70 of the invention;

FIG. 106 is an equivalent circuit of a unit pixel of the solid-stateimaging device according to Embodiment 70;

FIG. 107 is a schematic cross-sectional configuration view of asolid-state imaging device according to Embodiment 71 of the invention;and

FIG. 108 is a schematic configuration view of an electronic apparatusaccording to an embodiment of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the invention will be explained withreference to FIG. 5 to FIG. 71 .

[Whole Configuration of a Solid-State Imaging Device]

First, the whole configuration of a CMOS solid-state imaging device,namely, a CMOS image sensor to which Embodiment 1 and Embodiment 2explained as follows are applied will be explained with reference toFIG. 5 .

A solid-state imaging device 1 shown in FIG. 5 includes an imaging area3 having plural pixels 2 arranged on a semiconductor substrate 13 madeof Si, a vertical drive circuit 4, column signal processing circuits 5,a horizontal drive circuit 6, an output circuit 7, a control circuit 8and the like as peripheral circuits of the imaging area 3.

The pixel 2 includes a photodiode as a photoelectric conversion elementand plural MOS transistors, and plural pixels 2 are arranged regularlyon the semiconductor substrate 13 in a two-dimensional array state.

The imaging area 3 includes the plural pixels 2 regularly arranged inthe two-dimensional array state. The imaging area 3 includes aneffective pixel area in which light is actually received and signalcharges generated by photoelectric conversion are accumulated and ablack reference pixel area which is formed around the effective pixelarea for outputting optical black to be a reference of a black level.

The control circuit 8 generates a clock signal, a control signal and thelike to be references of operations of the vertical drive circuit 4, thecolumn signal processing circuits 5, the horizontal drive circuit 6 andthe like based on a vertical synchronization signal, a horizontalsynchronization signal and a master clock. The clock signal, the controlsignal and the like generated in the control circuit 8 are inputted tothe vertical drive circuit 4, the column signal processing circuits 5and the horizontal drive circuit 6 and the like.

The vertical drive circuit 4 includes, for example, a shift register,selectively scanning respective pixels 2 in the imaging area 3 by therow sequentially in the vertical direction. Then, pixel signals based onsignal charges generated in accordance with the light receiving amountin photodiodes of respective pixels 2 are supplied to the column signalprocessing circuits 5 through vertical signal lines.

The column signal processing circuits 5 are arranged, for example, atrespective columns of pixels 2, performing signal processing such asnoise removal or signal amplification to signals outputted from pixels 2of one row by the pixel column using a signal from a black referencepixel area (formed around the effective pixel area though not shown).Horizontal selection switches (not shown) are provided at output stagesof the column signal processing circuits 5 between the circuits 5 and ahorizontal signal line 90.

The horizontal drive circuit 6 includes, for example, a shift register,sequentially selecting respective column signal processing circuits 5 bysequentially outputting horizontal scanning pulses to thereby allowrespective column signal processing circuits 5 to output pixel signalsto the horizontal signal line 90.

The output circuit 7 performs signal processing to signals sequentiallysupplied from respective column signal processing circuits 5 through thehorizontal signal line 90 and output the signals.

The solid-state imaging devices in Embodiments 1 to 56 explained asfollows are included in the solid-state imaging device 1 shown in FIG. 5, in which cross-sectional configurations of pixels in effective imagingareas are particularly shown.

Embodiment 1 [Example Including Two Vertical Gate Electrodes]

FIG. 6 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 1 of the invention, and FIG. 7 shows aschematic cross-sectional configuration taken along A-A line of FIG. 6 .FIG. 6 and FIG. 7 are a plan view and a cross-sectional view of arelevant part included in one pixel. As shown in FIG. 6 and FIG. 7 , thesolid-state imaging device includes a photodiode PD and a charge readouttransistor Tr formed in a semiconductor substrate 13. The charge readouttransistor Tr includes two vertical gate electrodes 12 a, 12 b formed ina peripheral portion of the photodiode PD and a floating diffusionregion 11 formed at a corner portion of a photodiode region 60 toward anoutside region. In the present embodiment, a case in which a firstconductive type is a p-type and a second conductive type is an n-typewill be explained.

The semiconductor substrate 13 is made of a p-type silicon substrate.

The photodiode PD includes an n-type impurity region (n region) 14, ann-type high concentration impurity region (n+ region) 15, and a p-typehigh concentration impurity region (p+ region) 16 sequentially formed inthe semiconductor substrate 13 from the back side to the surface side ofthe semiconductor substrate 13. The photodiode PD is mainly formed by apn junction “j” which is a joint surface between the p+ region 16 andthe n+ region 15. In the embodiment, the photodiode PD is formed in aphotodiode region 60 having an approximately square shape when seen fromthe front as shown in FIG. 6 , and the photodiode region 60 isdemarcated from adjacent pixels by a pixel isolation region 10 made ofthe p-type semiconductor substrate 13. In the embodiment, the photodioderegion 60 has the square shape, however, it is not limited to the squareshape and various shapes such as a rectangular shape or a polygonalshape can be applied. As a matter of convenience, the photodiode 60 ismade to be the square shape in the embodiment.

In the plan view shown in FIG. 6 , a region where the photodiode PD isformed in the pixel isolation region 10 is shown as the photodioderegion 60.

The two vertical gate electrodes 12 a, 12 b are formed at an outerperipheral portion of the photodiode region 60 respectively along twoedges forming a corner portion of the photodiode region 60. That is, theelectrodes are respectively formed along two adjacent edges of thephotodiode region 60 having a polygonal shape in plan view, the squareshape in FIG. 6 . A cross-sectional shape of the vertical gateelectrodes 12 a, 12 b is a rectangular shape, and the electrodes arearranged so that long axis directions in the cross-sectional shape areparallel to edges of the photodiode region 60 in which the vertical gateelectrodes 12 a, 12 b are formed. Additionally, the vertical gateelectrodes 12 a, 12 b are formed by being buried in the semiconductorsubstrate 13 are formed by being buried in the semiconductor substrate13 where the electrodes touch the pn junction “j” of the photodiode PDformed in the semiconductor substrate 13 through a gate insulating film18. At a portion corresponding to a lower peripheral portion including alower portion of the vertical gate electrodes 12 a, 12 b, a p-type lowconcentration impurity region (p-region) 17 whose impurity concentrationis lower than the p+ region 16 is formed between the n+ region 15included in the photodiode PD and the gate insulating film 18. In the p+region 16 included in the photodiode PD, a portion near the gateinsulating film 18 is also formed as the p-type low concentrationimpurity region (p-region) 17.

The floating diffusion region 11 is made of an n-type high concentrationimpurity region (n+) at an region on the surface side of thesemiconductor substrate 13 from the corner portion of the photodioderegion 60 adjacent to the vertical gate electrodes 12 a, 12 b toward theoutside of the photodiode region 60. The floating diffusion region 11 isshared between the two vertical gate electrodes 12 a, 12 b. In theembodiment, the floating diffusion region 11 is formed so as to touchthe vertical gate electrodes 12 a, 12 b through the gate insulating film18.

The two vertical gate electrodes 12 a, 12 b and the floating diffusionregion 11 formed in the semiconductor substrate 13 through the gateinsulating film 18 make up a charge readout transfer transistor Tr.

In the solid-state imaging device of the embodiment, desired MOStransistors such as a reset transistor, an amplification transistor, aselection transistor and the like included in one pixel are formed inthe vicinity of the photodiode region 60 of the semiconductor substrate13, which are not shown in FIG. 6 . On the surface side of thesemiconductor substrate 13, plural layers of wiring layers for drivingthese MOS transistors are formed through an interlayer insulating film.

The solid-state imaging device of the embodiment may be used as afront-illuminated solid-state imaging device which illuminates lightfrom the surface side of the semiconductor 13 or may be used as aback-illuminated solid-state imaging device which illuminates light fromthe back side of the semiconductor substrate 13.

In the case of the front-illuminated type, light is incident from thesurface side of the semiconductor substrate 13 through on-chip lenses,color filter films and the like, and in the case of the back-illuminatedtype, light is incident from the back side of the semiconductorsubstrate 13 through on-chip lenses, color filter films and the like.

[Drive Method]

A drive method of the solid-state imaging device in the embodimenthaving the above configuration will be explained.

First, a light “L” is illuminated from the side in which the on-chiplens is formed in the solid-state imaging device. Then, the lightcondensed by the on-chip lens is incident on the photodiode PD in thesemiconductor substrate 13.

Then, the light incident on the photodiode PD is photoelectricallyconverted in then-region 14 and the pn junction portion “J” portion, andsignal charges are generated in the photodiode PD. The generated signalcharges are accumulated in a potential well formed in the n+ region 15.In the solid-state imaging device of the embodiment, negative voltage isapplied to the vertical gate electrodes 12 a, 12 b at the time ofaccumulating signal charges. Since the p-region 17 is formed near thebottom portions of the vertical gate electrodes 12 a, 12 b and the gateinsulating film 18 in the embodiment, holes are pinned at the bottomportions of the vertical gate electrodes 12 a, 12 b through the gateinsulating film 18. The hole pinning in which holes are pinned occurs inthis manner, thereby shutting dark current noise entering from thebottom portions of the vertical gate electrodes 12 a, 12 b and the gateinsulating film 18 into the p-region 17 at the time of accumulatingsignal charges. Accordingly, it is possible to reduce dark currentreaching the photodiode PD.

After accumulating signal charges, positive voltage is applied to thevertical gate electrodes 12 a, 12 b. Here, the same potential is appliedto the two vertical gate electrodes 12 a, 12 b. In FIG. 8 , potentialsgenerated in the photodiode region 60 when the potential for readingsignal charges is applied to the two vertical gate electrodes 12 a, 12 bare shown by contour lines. As shown in FIG. 8 , when the potential forreading signal charges are applied to the two vertical gate electrodes12 a, 12 b, potential becomes deeper toward the corner portion of thephotodiode region 60 formed by the vertical gate electrodes 12 a, 12 bas shown by an arrow RI. In the embodiment, the floating diffusionregion 11 is formed from the corner portion of the photodiode region 60formed by the vertical gate electrodes 12 a, 12 b toward the outsideregion of the photodiode region 60. Accordingly, potential gradient isformed in the photodiode region 60 by applying positive voltage to thevertical gate electrodes 12 a, 12 b, and accumulated signal charges aretransferred in the direction shown by the arrow R1 in FIG. 6 and FIG. 7along the potential gradient. Consequently, signal charges are read tothe floating diffusion region 11.

The potential in the photodiode region 60 becomes deeper toward theposition where the vertical gate electrodes 12 a, 12 b are formed due toeffects of the potential applied to the vertical gate electrodes 12 a,12 b by applying positive voltage to the vertical gate electrodes 12 a,12 b. In the embodiment, the vertical gate electrodes 12 a, 12 b arerespectively formed along two edges of the outer peripheral portionforming one corner portion of the photodiode region 60, therefore, theportion sandwiched by the vertical gate electrodes 12 a, 12 bparticularly becomes deep. The floating diffusion region 11 is formed atthe position where the potential becomes deep, therefore, signal chargesaccumulated in the photodiode PD are read to the floating diffusionregion 11 so as to be read along a valley of potential.

Accordingly, in the embodiment, signal charges can be read by changingthe potential gradient in the photodiode region 60 by the charge readouttransistor Tr, therefore, signal charges are read not only through thetransfer channel in related arts. Accordingly, it is possible totransfer signal charges without affected by defects generated at sidesurfaces of the vertical gate electrodes 12 a, 12 b. As a result,transfer failure of signal charges and generation of dark current can besuppressed.

Additionally, the vertical gate electrodes 12 a, 12 b are formed at theouter peripheral portion of the photodiode region 60, therefore, it ispossible to reduce the loss of the saturation charge amount (Qs) of thearea of the vertical gate electrodes 12 a, 12 b and the peripherythereof as compared with the case in which the vertical gate electrodeis formed at the center of the photodiode PD as in relate arts. That isto say, it is possible to reduce the loss of the saturation chargeamount (Qs) at the central portion of the photodiode PD, in whichcapacitance per a unit area is usually high. According to this, thesaturation charge amount (Qs) and sensitivity can be improved.

Embodiment 2 [Example Including Two Vertical Gate Electrodes]

FIG. 9 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 2 of the invention, and FIG. 10 shows across-sectional configuration taken along B-B line. The presentembodiment differs from the Embodiment 1 in a position in which thefloating diffusion region 11 is formed. In FIG. 9 and FIG. 10 , samesymbols are given to portions corresponding to FIG. 6 and FIG. 7 , andthe repeated explanation is omitted.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 is formed on the surface side of the semiconductorsubstrate 13 from the corner portion of the photodiode region 60sandwiched by the vertical gate electrodes 12 a, 12 b toward the insideof the photodiode region 60. The floating diffusion region 11 is sharedbetween the two vertical gate electrodes 12 a, 12 b. In the embodiment,the floating diffusion region 11 is formed so as to touch the verticalgate electrodes 12 a, 12 b through the gate insulating film 18.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred in thedirection shown by the arrow R1 along the potential gradient in thephotodiode region 60 which is made by application of positive voltage tothe vertical gate electrodes 12 a, 12 b. Consequently, the signalcharges are read to the floating diffusion region 11.

Also according to the solid-state imaging device of the embodiment, thesame advantages as Embodiment 1 can be obtained. Further, in thesolid-state imaging device of the embodiment, the floating diffusionregion 11 is formed inside the photodiode region 60, therefore, thereduction of pixel size can be realized.

Embodiment 3 [Example Including Two Vertical Gate Electrodes and aPlanar Gate Electrode]

FIG. 11 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 3 of the invention, and FIG. 12 shows across-sectional configuration taken along C-C line of FIG. 11 . In FIG.11 and FIG. 12 , same symbols are given to portions corresponding toFIG. 6 and FIG. 7 and the repeated explanation is omitted.

In the solid-state imaging device of the present embodiment, the chargereadout transistor Tr included in one pixel includes a planar gateelectrode 19, the vertical gate electrodes 12 a, 12 b and the floatingdiffusion region 11.

The two vertical gate electrodes 12 a, 12 b are formed at an outerperipheral portion of the photodiode region 60 respectively along twoedges forming a corner portion of the photodiode region 60. On an uppersurface of the semiconductor substrate 13 positioned at the cornerportion of the photodiode region 60 sandwiched by the vertical gateelectrodes 12 a, 12 b, the planar gate electrode 19 integrally formedwith the vertical gate electrodes 12 a, 12 b is formed. The planar gateelectrode 19 is formed through the gate insulating film 18 on a surfaceof the semiconductor substrate 13. The same potential as the verticalgate electrodes 12 a, 12 b is applied to the planar gate electrode 19.

In the embodiment, the floating diffusion region 11 is formed at aregion outside the photodiode region 60 on the surface side of thesemiconductor substrate 13, which is a region touching the semiconductorsubstrate 13 under the planar gate electrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred by thepotential gradient made by application of positive voltage to thevertical gate electrodes 12 a, 12 b and the planar gate electrode 19 andread to the floating diffusion region 11.

In FIG. 13 , potentials in the photodiode region 60 generated when thepotential for reading signal charges is applied to the two vertical gateelectrodes 12 a, 12 b and the planar gate electrode 19 are shown bycontour lines. As shown in FIG. 13 , when the potential for readingsignals is applied to the two vertical gate electrodes 12 a, 12 b andthe planar gate electrode 19, the potential becomes deeper toward acorner portion region formed by the vertical gate electrodes 12 a, 12 band the planar gate electrode 19.

When comparing FIG. 8 shown in Embodiment 1, the gradient to be deepertoward the corner portion sandwiched by the vertical gate electrodes 12a, 12 b was made in FIG. 8 , however, at the corner portion, potentialgradient is made so as to be deeper in the direction shown by an arrowR2.

The potential gradient in the direction shown by the arrow R2 at thecorner portion in the photodiode region 60 shown in FIG. 8 may causetransfer loss of signal charges. On the other hand, in the presentembodiment, the potential does not become shallow at the corner portionsandwiched by the vertical gate electrodes 12 a, 12 b as shown in FIG.13 and a gradient is made in the direction in which the potentialbecomes deeper. In short, the gradient of the arrow R2 as shown in FIG.8 does not exist. This is because of effects of the planar gateelectrode 19. That is, the planar gate electrode 19 is used togetherwith the vertical gate electrodes 12 a, 12 b, thereby forming thepotential gradient more effectively from the inside of the photodioderegion 60 toward the floating diffusion region 11. Accordingly, it ispossible to suppress occurrence of transfer loss of signal charges.

Also in the solid-state imaging device of the embodiment, it is possibleto obtain the same advantages as Embodiment 1.

Embodiment 4 [Example Including Two Vertical Gate Electrodes and aPlanar Gate Electrode]

FIG. 14 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 4 of the invention, and FIG. 15 shows across-sectional configuration taken along D-D line of FIG. 14 . In FIG.14 and FIG. 15 , same symbols are given to portions corresponding toFIG. 11 and FIG. 12 and the repeated explanation is omitted. Theembodiment differs from the Embodiment 3 in a position of the floatingdiffusion region 11.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 is formed at a region inside the photodiode region60 on the surface side of the semiconductor substrate 13, which is aregion touching the semiconductor substrate 13 under the planar gateelectrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient shown by the arrow R1 in the photodiode region60, which is made by application of positive voltage to the verticalgate electrodes 12 a, 12 b. The transfer signal charges are read to thefloating diffusion region 11.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device of the embodiment, the pixel size can bereduced.

Embodiment 5

[Example including a vertical gate electrode under a planar gateelectrode]

FIG. 16 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 5 of the invention, and FIG. 17 shows across-sectional configuration taken along E-E line of FIG. 16 . In FIG.16 and FIG. 17 , same symbols are given to portions corresponding toFIG. 11 and FIG. 12 and the repeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the planar gate electrode19, the vertical gate electrode 12 and the floating diffusion region 11.

The planar gate electrode 19 is formed on the semiconductor substrate 13at a corner portion of the photodiode region 60 through the gateinsulating film 18. The vertical gate electrode 12 formed integrallywith the planar gate electrode 19 is formed under the planar gateelectrode 19. The vertical gate electrode 12 is formed so as to touchthe pn junction “j” of the photodiode PD formed inside the semiconductorsubstrate 13 through the gate insulating film 18. The vertical gateelectrode 12 has a cross section of an approximately square shape, whichis formed to have a size not enough to cover the whole lower surface ofthe planar gate electrode 19 formed at the corner portion of thephotodiode region 60.

In the embodiment, the floating diffusion region 11 is formed at aregion outside the photodiode region 60 on the surface side of thesemiconductor substrate 13, which is a region touching the semiconductorsubstrate 13 under the planar gate electrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient shown by the arrow R1 in the photodiode region60, which is made by application of positive voltage to the verticalgate electrode 12. The signal charges are consequently read to thefloating diffusion region 11. In the embodiment, the vertical gateelectrode 12 is formed to have the size not enough to cover the wholelower surface of the planar gate electrode 19. Therefore, the transferof signal charges to the floating diffusion region 11 through thepotential gradient of the photodiode region 60 is not interrupted by thevertical gate electrode 12.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 6 [Example Including a Vertical Gate Electrode Under a PlanarGate Electrode]

FIG. 18 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 6 of the invention, and FIG. 19 shows across-sectional configuration taken along F-F line of FIG. 18 . In FIG.18 and FIG. 19 , same symbols are given to portions corresponding toFIG. 16 , FIG. 17 and the repeated explanation is omitted.

The embodiment differs from Embodiment 5 in a position of the floatingdiffusion region 11.

In the embodiment, the floating diffusion region 11 is formed at aregion inside the photodiode region 60 on the surface side of thesemiconductor substrate 13, which is a region touching the semiconductorsubstrate 13 under the planar gate electrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient shown by the arrow R1 in the photodiode region60, which is made by application of positive voltage to the verticalgate electrode 12. The signal charges are consequently read to thefloating diffusion region 11. In the embodiment, the vertical gateelectrode 12 is formed to have the size not enough to cover the wholelower surface of the planar gate electrode 19. Therefore, the transferof signal charges to the floating diffusion region 11 through thepotential gradient of the photodiode region 60 is not interrupted by thevertical gate electrode 12.

Also in the solid-state imaging device in the embodiment, the sameadvantages as Embodiment 1 can be obtained. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device in the embodiment, the pixel size can bereduced.

Embodiment 7 [Example Including One Vertical Gate Electrode]

FIG. 20 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 7 of the invention. A cross-sectionalconfiguration taken along A-A line in FIG. 2 0 is the same as FIG. 7 .In FIG. 2 0, same symbols are given to portions corresponding to FIG. 6and the repeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the vertical gate electrode12 a and the floating diffusion region 11. One vertical gate electrode12 a is formed along one edge of an outer peripheral portion of thephotodiode region 60. The vertical gate electrode 12 a is also formed tothe depth where the electrode 12 a touches the pn junction “j” of thephotodiode PD formed inside the semiconductor substrate 13 through thegate insulating film 18.

The floating diffusion region 11 is formed on the surface side of thesemiconductor substrate 13 from the corner portion of the photodioderegion 60 adjacent to the vertical gate electrode 12 a toward theoutside.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 a.Then, the transferred signal charges are consequently read to thefloating diffusion region 11.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 8 [Example Including One Vertical Gate Electrode]

FIG. 21 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 8 of the invention. A cross-sectionalconfiguration taken along B-B line in FIG. 21 is the same as FIG. 10 .In FIG. 21 , same symbols are given to portions corresponding to FIG. 9and the repeated explanation is omitted.

The embodiment differs from Embodiment 7 in a position of the floatingdiffusion region 11.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 is formed inside the photodiode region 60 on thesurface side of the semiconductor substrate 13, which is adjacent to thevertical gate electrode 12 a.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 a.Then, the transferred signal charges are consequently read to thefloating diffusion region 11.

Also in the solid-state imaging device in the embodiment, the sameadvantages as Embodiment 1 can be obtained. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device of the embodiment, the pixel size can bereduced.

Embodiment 9 [Example Including One Vertical Gate Electrode and OnePlanar Gate Electrode]

FIG. 22 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 9 of the invention. A cross-sectionalconfiguration taken along C-C line in FIG. 22 is the same as FIG. 12 .In FIG. 22 , same symbols are given to portions corresponding to FIG. 11and the repeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the vertical gate electrode12 a, the planar gate electrode 19 and the floating diffusion region 11.

First, one vertical gate electrode 12 a is formed along one edge of theouter peripheral portion of the photodiode region 60. The vertical gateelectrode 12 a is also formed to the depth where the electrode 12 atouches the pn junction “j” of the photodiode PD formed inside thesemiconductor substrate 13 through the gate insulating film 18.

The planar gate electrode 19 is formed on the semiconductor substrate 13at the corner portion of the photodiode region 60 which touches thevertical gate electrode 12 a through the gate insulating film 18integrally with the vertical gate electrode 12 a.

The floating diffusion region 11 is formed at a region inside thephotodiode region 60 on the surface side of the semiconductor substrate13, which is a region touching the semiconductor substrate 13 under theplanar gate electrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 a andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 11.

Also in the solid-state imaging device, the same advantages asEmbodiment 1 can be obtained. Moreover, the planar gate electrode 19 isused together with the vertical gate electrode 12 a, thereby forming thepotential gradient more effectively from the inside of the photodioderegion 60 toward the floating diffusion region 11. Accordingly,occurrence of transfer loss of signal charges can be suppressed.

Embodiment 10 [Example Including One Vertical Gate Electrode and OnePlanar Gate Electrode]

FIG. 23 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 10 of the invention. A cross-sectionalconfiguration taken along D-D line in FIG. 23 is the same as FIG. 15 .In FIG. 23 , same symbols are given to portions corresponding to FIG. 14and the repeated explanation is omitted.

The embodiment differs from Embodiment 9 in a position of the floatingdiffusion region 11.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 is formed at a region outside the photodiode region60 on the surface side of the semiconductor substrate 13, which is aregion touching the semiconductor substrate 13 under the planar gateelectrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 a andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 11.

Also in the solid-state imaging device, the same advantages asEmbodiment 1 can be obtained. Moreover, since the floating diffusionregion 11 is formed inside the photodiode region 60 in the solid-stateimaging device of the embodiment, the pixel size can be reduced.

Embodiment 11 [Example Including a Vertical Gate Electrode Extending toTwo Edges and a Planer Gate Electrode]

FIG. 24 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 11 of the invention. A cross-sectionalconfiguration taken along F-F line in FIG. 24 is the same as FIG. 19 .In FIG. 24 , same symbols are given to portions corresponding to FIG. 18and the repeated explanation is omitted.

The charge readout transistor Tr included in one pixel of thesolid-state imaging device of the embodiment includes a vertical gateelectrode 12 c, the planer gate electrode 19 and the floating diffusionregion 11.

First, the vertical gate electrode 12 c is formed extending to two edgesadjacent to each other at the outer peripheral portion of the photodioderegion 60. The vertical gate electrode 12 c is formed from the surfaceof the semiconductor substrate 13 to the depth where the electrode 12 ctouches the pn junction “j” of the photodiode PD in the semiconductorsubstrate 13 through the gate insulating film 18.

The planer gate electrode 19 is formed integrally with the vertical gateelectrode 12 c at the region of the corner portion of the photodioderegion 60 in which the vertical gate electrode 12 c is formed.

The floating diffusion region 11 is formed on the surface side of thesemiconductor substrate adjacent to the planar gate electrode 19 in thephotodiode region 60.

Also in the solid-state imaging device of the embodiment, signal chargesaccumulated in the photodiode PD are transferred along the potentialgradient in the photodiode region 60, which is made by application ofpositive voltage to the vertical gate electrode 12 c. Then, thetransferred signal charges are read to the floating diffusion region 11.Since the signal charges are transferred through the potential gradientformed inside the photodiode region 60 in the embodiment, it isnecessary that the floating diffusion region 11 is formed at a positionin which the transfer of signal charges is not interrupted by thevertical gate electrode 12 c. In the embodiment, the floating diffusionregion 11 is formed in the photodiode region 60 in which signal chargesare accumulated with respect to the vertical gate electrode 12 c,therefore, the transfer of signal charges is not interrupted by thevertical gate electrode 12 c.

Also in the solid-state imaging device, the same advantages asEmbodiment 1 can be obtained. Moreover, since the floating diffusionregion 11 is formed inside the photodiode region 60 in the solid-stateimaging device of the embodiment, the pixel size can be reduced.

Embodiment 12 [Example Including a Vertical Gate Electrode Extending toOne Edge as Well as a Corner Portion and a Planar Gate Electrode]

FIG. 25 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 12 of the invention. A cross-sectionalconfiguration taken along F-F line in FIG. 25 is the same as FIG. 19 .In FIG. 25 , same symbols are given to portions corresponding to FIG. 24and the repeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes a vertical gate electrode12 d, the planar gate electrode 19 and the floating diffusion region 11.

First, the vertical gate electrode 12 d is formed extending to one edgeof the outer peripheral portion of the photodiode region 60 and thecorner portion of the photodiode region 60 adjacent to the edge. Thevertical gate electrode 12 d is formed from the surface of thesemiconductor substrate 13 to the depth where the electrode 12 d touchesthe pn junction “j” of the photodiode PD formed in the semiconductorsubstrate 13 through the gate insulating film 18.

The planar gate electrode 19 is formed integrally with the vertical gateelectrode 12 d at the corner region of the photodiode region 60 in whichthe vertical gate electrode 12 d is formed.

The floating diffusion region 11 is formed on the surface side of thesemiconductor substrate 13 adjacent to the vertical gate electrode 12 din the photodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 d.Consequently, the transferred signal charges are read to the floatingdiffusion region 11. In the solid-state imaging device of theembodiment, the vertical gate electrode 12 d is formed extending to twoedges of the outer peripheral portion of the photodiode region 60. Sincethe signal charges are transferred by the potential gradient formed inthe photodiode region 6 0 in the embodiment, the floating diffusionregion 11 is formed at a position where the transfer of signal chargesis not interrupted by the vertical gate electrode 12 d. That is, in theembodiment, the floating diffusion region 11 is formed inside thephotodiode region 60 which is the side in which signal charges areaccumulated with respect to the vertical gate electrode 12 d, therefore,the transfer of signal charges is not interrupted by the vertical gateelectrode 12 d.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device according to the embodiment of the invention,the pixel size can be reduced.

In Embodiments 1 to 12 described above, configurations of one pixel havebeen explained. The charge readout transistor Tr according to theembodiment of the invention can share the vertical gate electrode, theplanar gate electrode or the floating diffusion region included in thecharge readout transistor Tr among adjacent pixels. Layout examples ofthe charge readout transistor Tr with respect to the photodiode regionwill be explained while showing adjacent four pixels as follows. In thefollowing explanation of embodiments, only planar configurations in thepixel portion of the solid-state imaging device will be shown andcross-sectional configurations are omitted, however, the cross-sectionalconfigurations correspond to the cross-sectional configurations in thesolid-state imaging devices according to Embodiments 1 to 12. Therefore,the photodiode region is defined as a region in which the photodiodeformed in the semiconductor substrate is formed, which is seen in planview, thought not shown. The vertical gate electrode is defined as agate electrode formed from the surface of the semiconductor substrate tothe depth where the electrode reaches the pn junction of the photodiodeformed in the semiconductor substrate through the gate insulating film.The planer gate electrode is defined as a gate electrode formed on thesemiconductor substrate through the gate insulating film.

Embodiment 13

[Example in which a Planar Gate Electrode and a Floating DiffusionRegion are Shared Among Adjacent Pixels]

FIG. 26 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 13 of the invention. FIG. 26 is a planview of a relevant part included in adjacent four pixels, showing anexample in which adjacent pixels are shifted in the vertical directionor the horizontal direction so as to be a so-called honeycomb pixelarrangement. In FIG. 26 , same symbols are given to portionscorresponding to the above drawings and the repeated explanation isomitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes a planar gate electrode 23,the vertical gate electrode 12 formed integrally with the planar gateelectrode 23 and a floating diffusion region 21.

The planar gate electrode 23 is formed at a region extending to one edgeof the peripheral portion of the photodiode region 60 and a cornerportion of the photodiode region 60 adjacent to the edge so as to beparallel to the edge and the corner. At a position of the corner portionof the photodiode region 60 under the planar gate electrode 23, thevertical gate electrode 12 integrally formed with the planar gateelectrode 23 is formed. The vertical gate electrode 12 has a crosssection of an approximately square shape, which is formed to have a sizenot enough to cover the whole lower surface of the planar gate electrode23 formed at the corner portion of the photodiode region 60.

The floating diffusion region 21 is formed outside the photodiode region6 0 which is a region adjacent to the semiconductor substrate under theplanar gate electrode 23.

In the solid-state imaging device of the embodiment, the planar gateelectrode 23 formed along one edge of the peripheral portion of thephotodiode region 60 is shared between pixels adjacent in an obliquedirection, respectively. Moreover, the floating diffusion region 21formed outside the photodiode region 60 is shared between pixelsadjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12. Then,the transferred signal charges are read to the floating diffusion region21. In the solid-state imaging device according to the embodiment of theinvention, the planar gate electrode 23 formed along one edge of theouter peripheral portion of the photodiode region 6 0 is shared betweentwo pixels adjacent in the oblique direction. Therefore, signal chargesaccumulated in the photodiode regions 60 of two pixels are transferredat the same time. Additionally, the vertical gate electrode 12 is formedto have the size not enough to cover the whole lower surface of theplanar gate electrode 23 in the embodiment. Therefore, transfer ofsignal charges to the floating diffusion region 21 by the potentialgradient in the photodiode region 60 is not interrupted by the verticalgate electrode 12.

In the embodiment, the planar gate electrode 23 and the floatingdiffusion region 21 are shared between adjacent two pixels, therebyreducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 14

[Example in which a Planar Gate Electrode is Shared Between AdjacentPixels]

FIG. 27 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 14 of the invention. In FIG. 27 , samesymbols are given to portions corresponding to FIG. 26 and the repeatedexplanation is omitted.

The embodiment differs from Embodiment 13 in a configuration of thefloating diffusion region.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 is formed at a region on the surface side of thesemiconductor substrate 13 inside the photodiode region 60, which isadjacent to the semiconductor substrate 13 under the planar gateelectrode 23. That is, the floating diffusion region 11 is not sharedbetween adjacent pixels.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12. Then,the transferred signal charges are read to the floating diffusion region11. In the solid-state imaging device of the embodiment, the planar gateelectrode 23 formed along one edge of the outer peripheral portion ofthe photodiode region 60 is shared between two pixels adjacent in theoblique direction, therefore, signal charges accumulated in thephotodiode regions 60 of two pixels are transferred at the same time.

In the embodiment, the planar gate electrode 23 is shared betweenadjacent two pixels, thereby reducing the pixel size. Moreover, sincethe floating diffusion region 11 is formed inside the photodiode region60 in the solid-state imaging device of the embodiment, the pixel sizecan be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 15

[Example in which Two Planar Gate Electrodes are Shared Between AdjacentPixels]

FIG. 28 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 15 of the invention. In FIG. 28 , samesymbols are given to portions corresponding to FIG. 2 7 and the repeatedexplanation is omitted.

In the embodiment, the planar gate electrodes formed at the cornerportion of the photodiode region 60 in Embodiment 14 is shared betweenadjacent pixels.

In the solid-state imaging device of the embodiment, a planar gateelectrode 25 formed at the corner portion of the photodiode region 6 0is shared between pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12. Then,the transferred signal charges are read to respective floating diffusionregions 11. In the embodiment, the planar gate electrode 25 is sharedbetween pixels adjacent in the oblique direction as well as betweenpixels adjacent in the vertical direction. Accordingly, positive voltageis applied to the vertical gate electrode 12 and the planar gateelectrode 25, thereby transferring signal charges of four pixels shownin FIG. 28 are transferred at the same time. Then, the signal chargesare read to respective floating diffusion regions 11.

In the embodiment, the planar gate electrode 25 is shared between pixelsadjacent in the oblique direction as well as between pixels adjacent inthe vertical direction, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device according to the embodiment of the invention,the pixel size can be reduced.

Embodiment 16

[Example in which a Planar Gate Electrode and a Vertical Gate Electrodeare Shared Between Two Pixels]

FIG. 29 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 16 of the invention. In FIG. 29 , samesymbols are given to portions corresponding to FIG. 2 8 and the repeatedexplanation is omitted.

In the embodiment, the vertical gate electrode in Embodiment 15 isshared between pixels adjacent in the vertical direction.

In the solid-state imaging device of the embodiment, a vertical gateelectrode 26 is shared between pixels adjacent in the verticaldirection. That is, the vertical gate electrode 26 in the embodiment isformed to have a rectangular shape in cross section so as to extend toadjacent pixels.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 26. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the planar gate electrode 25 is shared betweenpixels adjacent in the oblique direction as well as between pixelsadjacent in the vertical direction. Accordingly, positive voltage isapplied to the vertical gate electrodes 26 and the planar gate electrode23, thereby signal charges of four pixels shown in FIG. 29 aretransferred at the same time. Then, the signal charges are read torespective floating diffusion regions 11.

In the embodiment, the planar gate electrode 25 is shared between twopixels adjacent in the vertical direction as well as in the obliquedirection, thereby reducing the pixel size. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device of the embodiment, the pixel size can bereduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 17

[Example in which a Vertical Gate Electrode and a Floating DiffusionRegion are Shared Between Two Pixels]

FIG. 30 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 17 of the invention. In FIG. 30 , samesymbols are given to portions corresponding to FIG. 6 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes vertical gate electrode 12b, 27 and the floating diffusion region 21.

The two vertical gate electrodes 12 b, 27 are formed at outer peripheralportions of each photodiode region 6 0, which forms one corner portionof the photodiode region 60. Then, one vertical gate electrode 27 of thetwo vertical gate electrodes 12 b, 27 is shared between pixels adjacentin the oblique direction. The vertical gate electrode 27 to be shared isarranged so that side surfaces of the electrode 27 which are opposed toeach other are allowed to face different photodiode regions 60,respectively.

The floating diffusion region 21 is formed outside of the photodioderegion 60 on the surface side of the semiconductor substrate 13 adjacentto the vertical electrodes 12 b, 27. The floating diffusion region 21 isshared between pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 12 b,27. Then, the transferred signal charges are read to the floatingdiffusion region 21. In the embodiment, the vertical gate electrode 27is shared between pixels adjacent in the oblique direction. Accordingly,positive voltage is applied to the two vertical gate electrodes 12 b, 27included in one pixel at the same time, thereby transferring signalcharges of two pixels adjacent in the oblique direction shown in FIG. 30. Then, the signal charges are read to respective floating diffusionregions 21.

In the embodiment, the vertical gate electrode 27 and the floatingdiffusion region 21 are shared between adjacent two pixels, therebyreducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 18

[Example in which a Vertical Gate Electrode is Shared Between TwoPixels]

FIG. 31 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 18 of the invention. In FIG. 31 , samesymbols are given to portions corresponding to FIG. 3 0 and the repeatedexplanation is omitted. The embodiment differs from Embodiment 17 in aconfiguration of the floating diffusion region.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 included in the charge readout transistor Tr of onepixel is formed adjacent to the vertical gate electrodes 12 b, 27 insidethe photodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 12 b,27. Then, the transferred signal charges are read to the floatingdiffusion region 11. In the embodiment, the vertical gate electrode 27is shared between pixels adjacent in the oblique direction. Accordingly,positive voltage is applied to the two vertical gate electrodes 12 b, 27included in one pixel at the same time, thereby transferring signalcharges of two pixels adjacent in the oblique direction shown in FIG. 31are transferred at the same time. Then, the signal charges are read torespective floating diffusion regions 11.

In the embodiment, the vertical gate electrode 27 is shared betweenadjacent two pixels, thereby reducing the pixel size. Moreover, sincethe floating diffusion region 11 is formed inside the photodiode region60 in the solid-state imaging device of the embodiment, the pixel sizecan be reduced.

Also in the solid-state imaging device according to the embodiment ofthe invention, the same advantages as Embodiment 1 can be obtained.

Embodiment 19

[Example in which a Vertical Gate Electrode and a Floating DiffusionRegion are Shared Between Adjacent Pixels]

FIG. 32 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 19 of the invention. In FIG. 32 , samesymbols are given to portions corresponding to FIG. 11 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes vertical gate electrodes 12b, 27, a planar gate electrode 29 and the floating diffusion region 21.

The vertical gate electrodes 12 b, 27 are formed at the outer peripheralportion of the photodiode region 60 along two edges forming one cornerportion of the photodiode region 60 respectively. On an upper surface ofthe semiconductor substrate 13 positioned at the corner portion of thephotodiode region 60 sandwiched by the vertical gate electrodes 12 b,27, the planar gate electrode 29 integrally formed with the verticalelectrodes 12 b, 27 is formed. One vertical gate electrode 27 of the twovertical gate electrodes 12 b, 27 is shared between pixels adjacent inthe oblique direction.

The floating diffusion region 21 is formed outside the photodiode region60 on the surface side of the semiconductor substrate 13 adjacent to thevertical electrodes 12 b, 27. Then, the floating diffusion region 21 isshared between two pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 12 b,27. Then, the transferred signal charges are read to the floatingdiffusion region 21. In the embodiment, the vertical gate electrode 27is shared between pixels adjacent in the oblique direction. Accordingly,positive voltage is applied to the two vertical gate electrodes 12 b, 27included in one pixel at the same time, thereby transferring signalcharges of two pixels adjacent in the oblique direction shown in FIG. 32are transferred at the same time. Then, the signal charges are read torespective floating diffusion regions 21.

In the embodiment, the vertical gate electrode 27 and the floatingdiffusion region 21 are shared between adjacent two pixels, therebyreducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 20

[Example in which a Vertical Gate Electrode is Shared Between AdjacentPixels]

FIG. 33 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 20 of the invention. In FIG. 33 , samesymbols are given to portions corresponding to FIG. 3 2 and the repeatedexplanation is omitted.

The embodiment differs from Embodiment 19 in a configuration of thefloating diffusion region.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 included in the charge readout transistor Tr of onepixel is formed adjacent to the vertical gate electrodes 12 b, 27 insidethe photodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 12 b,27. Then, the transferred signal charges are read to the floatingdiffusion region 11. In the embodiment, the vertical gate electrode 27is shared between pixels adjacent in the oblique direction. Accordingly,positive voltage is applied to the two vertical gate electrodes 12 b, 27included in one pixel at the same time, thereby transferring signalcharges of two pixels adjacent in the oblique direction shown in FIG. 33are transferred at the same time. Then, the signal charges are read torespective floating diffusion regions 11.

In the embodiment, the vertical gate electrode 27 is shared betweenadjacent two pixels, thereby reducing the pixel size. Moreover, sincethe floating diffusion region 11 is formed inside the photodiode region60 inside the solid-state imaging device of the embodiment, the pixelsize can be reduced.

Also in the solid-state imaging device according to the embodiment ofthe invention, the same advantages as Embodiment 1 can be obtained.

Embodiment 21

[Example in which a Vertical Gate Electrode and a Planar Gate Electrodeare Shared Between Adjacent Pixels]

FIG. 34 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 21 of the invention. In FIG. 34 , samesymbols are given to portions corresponding to FIG. 3 3 and the repeatedexplanation is omitted.

The solid-state imaging device of the embodiment differs from Embodiment20 in a configuration of the planar gate electrode.

In the solid-state imaging device according to the embodiment of theinvention, a planar gate electrode 30 included in the charge readouttransistor Tr of one pixel is shared between pixels adjacent in thevertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 12 b,27. Then, the transferred signal charges are read to the floatingdiffusion region 11. In the embodiment, the vertical gate electrode isshared between pixels adjacent in the oblique direction. Additionally,the planar gate electrode 30 is shared between pixels adjacent in thevertical direction. Accordingly, positive voltage is applied to thevertical gate electrodes 12 b, 2 7 and the planar gate electrode 3 0included in one pixel at the same time, thereby transferring signalcharges of four pixels shown in FIG. 34 at the same time. Then, signalcharges accumulated in respective photodiode regions are read torespective floating diffusion regions 11.

In the embodiment, the vertical gate electrode 27 and the planar gateelectrode 30 are shared between adjacent two pixels, thereby reducingthe pixel size. Moreover, since the floating diffusion region 11 isformed inside the photodiode region 60 in the solid-state imaging deviceof the embodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 22 [Example Including a Vertical Gate Electrode Extending toTwo Edges is Shared Between Adjacent Pixels]

FIG. 35 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 22 of the invention. In FIG. 35 , samesymbols are given to portions corresponding to FIG. 3 3 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes a vertical gate electrode31 and the floating diffusion region 11.

The vertical gate electrode 31 included in one pixel is formed extendingto adjacent two edges at the outer peripheral portion of the photodioderegion 60. A portion corresponding to one edge of the vertical gateelectrode 31 formed extending to adjacent two edges at the outerperipheral portion of the photodiode region 60 is shared between pixelsadjacent in the oblique direction.

The planar gate electrode 19 is formed integrally with the vertical gateelectrode 31 at the corner portion of the photodiode region 60 in whichthe vertical gate electrode 31 is formed.

The floating diffusion region 11 is formed adjacent to the vertical gateelectrode inside the photodiode region.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 31. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 31 is shared betweenpixels adjacent in the oblique direction. Accordingly, signal charges oftwo pixels shown in FIG. 35 adjacent in the oblique direction aretransferred at the same time. Then, signal charges accumulated inrespective photodiodes PD are read to respective floating diffusionregions 11.

In the embodiment, the vertical gate electrode 31 is shared betweenadjacent two pixels, thereby reducing the pixel size. Moreover, sincethe floating diffusion region 11 is formed inside the photodiode region60 in the solid-state imaging device of the embodiment, the pixel sizecan be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 23

[Example in which a Vertical Gate Electrode and a Planar Gate ElectrodeExtending to Two Edges are Shared Between Adjacent Pixels]

FIG. 36 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 23 of the invention. In FIG. 36 , samesymbols are given to portions corresponding to FIG. 3 5 and the repeatedexplanation is omitted.

The present embodiment differs from the Embodiment 22 in a configurationof the planar gate electrode.

A planar gate electrode 32 of the embodiment is shared between pixelsadjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 31. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 31 is shared betweenpixels adjacent in the oblique direction. Additionally, the planar gateelectrode 32 is shared between pixels adjacent in the verticaldirection. Accordingly, signal charges of four pixels shown in FIG. 36are transferred at the same time by application of positive voltage tothe vertical gate electrode 31. Then, signal charges accumulated inrespective photodiodes PD are read to respective floating diffusionregions 11.

In the embodiment, the vertical gate electrode 31 and the planar gateelectrode 32 are shared between adjacent pixels, thereby reducing thepixel size. Moreover, since the floating diffusion region 11 is formedinside the photodiode region 60 in the solid-state imaging device of theembodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 24

[Example in which a Vertical Gate Electrode Extending to Two Edges isShared Between Two Pixels]

FIG. 37 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 24 of the invention. In FIG. 37 , samesymbols are given to portions corresponding to FIG. 3 6 and the repeatedexplanation is omitted.

The present embodiment differs from the Embodiment 23 in a configurationof the vertical gate electrode.

A vertical gate electrode 33 of the embodiment is integrally formedextending to adjacent two edges as well as extending to pixels adjacentin the vertical direction at the outer peripheral portion of thephotodiode region 60. A portion corresponding to one edge of thevertical gate electrode 31 formed extending adjacent two edges at theouter peripheral portion of the photodiode region 60 is shared betweenpixels adjacent in the oblique direction. Additionally, a portion formedextending to pixels adjacent in the vertical direction in the verticalgate electrode 33 is formed under the planar gate electrode 32 which isshared between pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 33. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 33 is shared betweenpixels adjacent in the oblique direction as well as pixels adjacent inthe vertical direction. Additionally, the planar gate electrode 32 isshared between pixels adjacent in the vertical direction. Accordingly,signal charges of four pixels shown in FIG. 3 7 are transferred at thesame time by application of positive voltage to the vertical gateelectrode 33 and the planar gate electrode 32. Then, signal chargesaccumulated in respective photodiodes PD are read to respective floatingdiffusion regions 11.

In the embodiment, the vertical gate electrode 33 and the planar gateelectrode 32 are shared between adjacent two pixels, thereby reducingthe pixel size. Moreover, since the floating diffusion region 11 isformed inside the photodiode region 60 in the solid-state imaging deviceof the embodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 25

[Example in which a Vertical Gate Electrode and a Floating DiffusionRegion are Shared Between Adjacent Pixels]

FIG. 38 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 25 of the invention. In FIG. 38 , samesymbols are given to portions corresponding to FIG. 3 0 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the vertical gate electrode27 and the floating diffusion region 21.

One vertical gate electrode 27 included in one pixel is formed along oneedge of the outer peripheral portion of the photodiode region 60. Thevertical gate electrode 27 is shared between pixels adjacent in theoblique direction.

The floating diffusion region 21 included in one pixel is formed outsidethe photodiode region 60 on the surface side of the semiconductorsubstrate 13, which is adjacent to the vertical gate electrode 27. Thefloating diffusion region 21 is shared between pixels adjacent in thevertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 27. Then,the transferred signal charges are read to the floating diffusion region21. In the embodiment, the vertical gate electrode 27 is shared betweenpixels adjacent in the oblique direction. Accordingly, signal charges oftwo pixels adjacent in the oblique direction are transferred at the sametime by application of positive voltage to the vertical gate electrode27. Then, signal charges accumulated in respective photodiodes PD areread to respective floating diffusion regions 21.

In the embodiment, the vertical gate electrode 27 and the floatingdiffusion region 21 are shared between adjacent two pixels, therebyreducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 26

[Example in which a Vertical Gate Electrode and a Floating DiffusionRegion are Shared Between Adjacent Pixels]

FIG. 39 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 26 of the invention. In FIG. 39 , samesymbols are given to portions corresponding to FIG. 22 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the planar gate electrode19, the vertical gate electrode 27 integrally formed with the planargate electrode 19 and the floating diffusion region 21.

First, one vertical gate electrode 27 is formed along one edge of theouter peripheral portion of the photodiode region 60. The vertical gateelectrode 27 is shared between pixels adjacent in the oblique direction.

The planar gate electrode 19 is formed at the corner portion of thephotodiode region 60 adjacent to the vertical gate electrode 27, whichis formed integrally with the vertical gate electrode 27.

The floating diffusion region 21 is formed at a region outside thephotodiode region 60 so as to touch the semiconductor substrate 13 underthe planar gate electrode 19. The floating diffusion region 21 is sharedbetween pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 27. Then,the transferred signal charges are read to the floating diffusion region21. In the embodiment, the vertical gate electrode 27 is shared betweenpixels adjacent in the oblique direction. Accordingly, signal charges oftwo pixels adjacent in the oblique direction are transferred at the sametime by application of positive voltage to the vertical gate electrode27. Then, signal charges accumulated in respective photodiodes PD areread to respective floating diffusion regions 21.

In the embodiment, the vertical gate electrode 17 and the floatingdiffusion region 21 are shared between adjacent two pixels, therebyreducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 27

[Example in which a Vertical Gate Electrode is Shared Between AdjacentPixels]

FIG. 40 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 27 of the invention. In FIG. 40 , samesymbols are given to portions corresponding to FIG. 3 9 and the repeatedexplanation is omitted.

The present embodiment differs from Embodiment 26 in a configuration ofthe floating diffusion region.

In the solid-state imaging device of the embodiment, the floatingdiffusion region 11 is formed inside the photodiode region 60 so as totouch the semiconductor substrate 13 under the planar gate electrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 27, andread to the floating diffusion region 11. In the embodiment, thevertical gate electrode 27 is shared between pixels adjacent in theoblique direction. Accordingly, signal charges of two pixels adjacent inthe oblique direction are transferred at the same time by application ofpositive voltage to the vertical gate electrode 27. Then, signal chargesaccumulated in respective photodiodes PD are read to respective floatingdiffusion regions 11.

In the embodiment, the vertical gate electrode 27 is shared betweenadjacent two pixels, thereby reducing the pixel size. Moreover, sincethe floating diffusion region 11 is formed inside the photodiode region60 in the solid-state imaging device of the embodiment, the pixel sizecan be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 28

[Example in which a Vertical Gate Electrode and a Planar Gate Electrodeare Shared Between Adjacent Pixels]

FIG. 41 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 28 of the invention. In FIG. 41 , samesymbols are given to portions corresponding to FIG. 4 0 and the repeatedexplanation is omitted.

The present embodiment differs from Embodiment 27 in a configuration ofthe planar gate electrode.

In the solid-state imaging device of the embodiment, the planar gateelectrode 3 2 is shared between pixels adjacent in the verticaldirection.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 27 andthe planar gate electrode 32. Then, the transferred signal charges areread to the floating diffusion region 11. In the embodiment, thevertical gate electrode 27 is shared between pixels adjacent in theoblique direction. Additionally, the planar gate electrode 32 is sharedbetween pixels adjacent in the vertical direction. Accordingly, signalcharges of four pixels shown in FIG. 41 are transferred at the same timeby application of positive voltage to the vertical gate electrode 27 andthe planar gate electrode 32. Then, signal charges accumulated inrespective photodiodes PD are read to respective floating diffusionregions 11.

In the embodiment, the vertical gate electrode 27 and the planar gateelectrode 32 are shared between adjacent two pixels, thereby reducingthe pixel size. Moreover, since the floating diffusion region 11 isformed inside the photodiode region 60 in the solid-state imaging deviceof the embodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 29

[Example in which a Vertical Gate Electrode and a Planar Gate Electrodeare Shared Among Adjacent Pixels]

FIG. 42 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 29 of the invention. In FIG. 42 , samesymbols are given to portions corresponding to FIG. 41 and the repeatedexplanation is omitted.

The present embodiment differs from Embodiment 28 in a configuration ofthe vertical gate electrode.

In the embodiment, a vertical gate electrode 37 is formed to be sharedbetween pixels adjacent in the oblique direction as well as betweenpixels adjacent in the vertical direction, which is integrally formedextending to pixels adjacent in the oblique direction as well as pixelsadjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 37 andthe planar gate electrode 32. Then, the transferred signal charges areread to the floating diffusion region 11. In the embodiment, thevertical gate electrode 37 is shared between pixels adjacent in theoblique direction as well as pixels adjacent in the vertical direction.Additionally, the planar gate electrode 32 is shared between pixelsadjacent in the vertical direction. Accordingly, signal charges of fourpixels shown in FIG. 42 are transferred at the same time by applicationof positive voltage to the vertical gate electrode 37 and the planargate electrode 32. Then, signal charges accumulated in respectivephotodiodes PD are read to respective floating diffusion regions 11.

In the embodiment, the vertical gate electrode 37 and the planar gateelectrode 32 are shared between adjacent pixels, thereby reducing thepixel size. Moreover, since the floating diffusion region 11 is formedinside the photodiode region 60 in the solid-state imaging device of theembodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 30

[Example in which a Vertical Gate Electrode is Shared Between AdjacentPixels]

FIG. 43 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 30 of the invention. In FIG. 43 , samesymbols are given to portions corresponding to FIG. 25 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes a vertical gate electrode39, the planar gate electrode 19 and the floating diffusion region 11.

The vertical gate electrode 39 included in one pixel is formed along oneedge of the outer peripheral portion of the photodiode region 60 so asto extend to the edge and a corner portion of the photodiode region 60which is adjacent to the edge. Then, the vertical gate electrode 39formed along one edge of the outer peripheral portion of the photodioderegion 60 is shared between pixels adjacent in the oblique direction.

The planar gate electrode 19 is formed integrally with the vertical gateelectrode 39 at a region of the corner portion of the photodiode region60 in which the vertical gate electrode 39 is formed.

The floating diffusion region 11 is formed in the photodiode region 60,which is adjacent to the vertical gate electrode 39.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 39. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 39 is shared betweenpixels adjacent in the oblique direction. Accordingly, signal charges oftwo pixels adjacent in the oblique direction shown in FIG. 43 aretransferred at the same time. Then, signal charges accumulated inrespective photodiodes PD are read to respective floating diffusionregions 11.

In the embodiment, the vertical gate electrode 39 is shared betweenadjacent pixels, thereby reducing the pixel size. Moreover, since thefloating diffusion region 11 is formed inside the photodiode region 60in the solid-state imaging device of the embodiment, the pixel size canbe reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 31

[Example in which a Vertical Electrode and a Planar Gate Electrode areShared Between Adjacent Pixels]

FIG. 44 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 31 of the invention. In FIG. 44 , samesymbols are given to portions corresponding to FIG. 43 and the repeatedexplanation is omitted.

Part of the present embodiment differs from Embodiment 30 in aconfiguration of the planar gate electrode.

In the embodiment, the planar gate electrode 32 is formed to beconnected between pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 39. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 39 is shared betweenpixels adjacent in the oblique direction. Additionally, the planar gateelectrode 32 is shared between pixels adjacent in the verticaldirection. Accordingly, signal charges of four pixels shown in FIG. 44are transferred at the same time by application of positive voltage tothe vertical gate electrode 39 and the planar gate electrode 32. Then,signal charges accumulated in respective photodiodes PD are read torespective floating diffusion regions 11.

In the embodiment, the vertical gate electrode 39 and the planar gateelectrode 32 are shared between adjacent two pixels, thereby reducingthe pixel size. Moreover, since the floating diffusion region 11 isformed inside the photodiode 60 in the solid-state imaging device of theembodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 32

[Example in which a Vertical Gate Electrode and a Planar Gate Electrodeare Shared Among Adjacent Pixels]

FIG. 45 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 32 of the invention. In FIG. 45 , samesymbols are given to portions corresponding to FIG. 44 and the repeatedexplanation is omitted.

Part of the present embodiment differs from Embodiment 31 in aconfiguration of the vertical gate electrode.

In the embodiment, a vertical gate electrode 41 is formed along one edgeof the outer peripheral portion of the photodiode region 60 so as toextend to the edge and the corner portion of the photodiode region 60which is adjacent to the edge. The vertical gate electrode 41 formedalong one edge of the outer peripheral portion of the photodiode region60 is shared between pixels adjacent in the oblique direction, which isformed extending to pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 41. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 41 is shared betweenpixels adjacent in the oblique direction as well as between pixelsadjacent in the vertical direction. Additionally, the planar gateelectrode 32 is shared between pixels adjacent in the verticaldirection. Accordingly, signal charges of four pixels shown in FIG. 45are transferred at the same time by application of positive voltage tothe vertical gate electrode 41. Then, signal charges accumulated inrespective photodiodes PD are read to respective floating diffusionregions 11.

The vertical gate electrode 41 is shared between pixels adjacent in theoblique direction. Accordingly, by applying positive voltage to thevertical gate electrode 41, signal charges of four pixels shown in FIG.45 are transferred at the same time. Then, the signal chargesaccumulated in the respective photodiodes PD are read to the respectivefloating diffusion regions 11.

In the embodiment, the vertical gate electrode 41 and the planar gateelectrode 32 are shared between adjacent two pixels, thereby reducingthe pixel size. Moreover, since the floating diffusion region 11 isformed in the photodiode region 60 in the solid-state imaging device ofthe embodiment, the pixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 33

[Example in which a Vertical Gate Electrode is Shared Between AdjacentPixels]

FIG. 46 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 33 of the invention. In FIG. 46 , samesymbols are given to portions corresponding to FIG. 22 and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes a vertical gate electrode42 and the floating diffusion region 11.

The vertical gate electrode 42 is formed at the outer peripheral portionof the photodiode region 60, which is shared between pixels adjacent inthe vertical direction. The floating diffusion region 11 is formedbetween the photodiode region 60 and the vertical gate electrode 42.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 42. Then,the transferred signal charges are read to the floating diffusion region11. In the embodiment, the vertical gate electrode 42 formed at theouter peripheral portion of the photodiode region 60 is shared betweenpixels adjacent in the vertical direction. Accordingly, signal chargesof two pixels adjacent in the vertical direction are transferred at thesame time by application of positive voltage to the vertical gateelectrode 42. Then, signal charges accumulated in photodiodes PD areread to respective floating diffusion regions 11.

In the embodiment, the vertical gate electrode 42 is shared between twopixels, thereby reducing the pixel size. Moreover, since the floatingdiffusion region 11 is formed inside the photodiode region 60 in thesolid-state imaging device of the embodiment, the pixel size can bereduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 34

[Example in which a Planar Gate Electrode and a Floating DiffusionRegion are Shared Between Adjacent Pixels]

FIG. 47 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 34 of the invention. FIG. 47 is a planview of a relevant part including adjacent four pixels, showing anexample of a so-called tetragonal pixel arrangement, in which pixels areorthogonally arranged in the horizontal direction and in the verticaldirection. That is, FIG. 47 shows a region of four pixels, namely, twopixels are arranged in the horizontal direction and two pixels arearranged in the vertical direction. In FIG. 47 , same symbols are givento portions corresponding to FIG. 16 and the repeated explanation isomitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes a planar gate electrode 44,the vertical gate electrode 12 integrally formed with the planar gateelectrode 44 and a floating diffusion region 43.

The planar gate electrode 44 is formed at the corner portion of thephotodiode region 60. The planar gate electrode 44 is shared betweenpixels adjacent in the horizontal direction. Under the planar gateelectrode 44 positioned at the corner portion, the vertical gateelectrode 12 integrally formed with the planar gate electrode 44 isformed. The vertical gate electrode 12 has a cross section of anapproximately square shape, which is formed to have a size not enough tocover the whole lower surface of the planar gate electrode 44.

The floating diffusion region 43 is formed at a region outside thephotodiode 60 and adjacent to the semiconductor substrate 13 under theplanar gate electrode 44. The floating diffusion region 43 is sharedbetween pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 43. In the embodiment, the planargate electrode 44 is shared between pixels adjacent in the horizontaldirection. Accordingly, signal charges of two pixels adjacent in thehorizontal direction are transferred at the same time by application ofpositive voltage to the vertical gate electrode 12 and the planar gateelectrode 44. Then, signal charges accumulated in respective photodiodesPD are read to respective floating diffusion regions 43. Additionally,in the embodiment, the vertical gate electrode 12 is formed to have asize not enough to cover the whole lower surface of the planar gateelectrode 44. Accordingly, the transfer of signal charges transferred tothe floating diffusion region 43 by the potential gradient in thephotodiode region 60 is not interrupted by the vertical gate electrode12.

In the embodiment, the vertical gate electrode 12 and the planar gateelectrode 44 are shared between adjacent two pixels, thereby reducingthe pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 35

[Example in which a Planar Gate Electrode and a Floating DiffusionRegion are Shared Between Adjacent Pixels]

FIG. 48 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 35 of the invention. In FIG. 48 , samesymbols are given to portions corresponding to FIG. 47 and the repeatedexplanation is omitted.

The present embodiment differs from Embodiment 34 in a configuration ofthe vertical gate electrode.

In the embodiment, a vertical gate electrode 46 a is formed under theplanar gate electrode 44 along one edge extending in the verticaldirection at the outer peripheral portion of the photodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 46 a andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 43. In the embodiment, the planargate electrode 44 is shared between pixels adjacent in the horizontaldirection. Accordingly, signal charges of two pixels adjacent in thehorizontal direction are transferred at the same time by application ofpositive voltage to the vertical gate electrode 46 a and the planar gateelectrode 44. Then, signal charges accumulated in photodiodes PD areread to respective floating diffusion regions 43.

In the embodiment, the vertical gate electrode 46 a is shared betweenadjacent two pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 36

[Example in which a Planar Gate Electrode, a Vertical Gate Electrode anda Floating Diffusion Region are Shared Between Adjacent Pixels]

FIG. 49 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 36 of the invention. In FIG. 49 , samesymbols are given to portions corresponding to FIG. 4 8 and the repeatedexplanation is omitted.

Part of the present embodiment differs from Embodiment 35 in aconfiguration of the vertical gate electrode.

In the embodiment, a vertical gate electrode 47 is formed under theplanar gate electrode 44 as well as at the outer peripheral portion ofthe photodiode region 60. The vertical gate electrode 47 is sharedbetween pixels adjacent in the horizontal direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 47 andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 43. In the embodiment, thevertical gate electrode 47 and the planar gate electrode 44 are sharedbetween pixels adjacent in the horizontal direction. Accordingly, signalcharges of two pixels adjacent in the horizontal direction aretransferred at the same time by application of positive voltage to thevertical gate electrode 47 and the planar gate electrode 44. Then,signal charges accumulated in photodiodes PD are read to respectivefloating diffusion regions 43.

In the embodiment, the planar gate electrode 44 and the vertical gateelectrode 47 shared between adjacent two pixels, thereby reducing thepixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 37

[Example in which a Planar Gate Electrode, a Vertical Gate Electrode anda Floating Diffusion Region are Shared Between Adjacent Pixels]

FIG. 50 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 37 of the invention. In FIG. 50 , samesymbols are given to portions corresponding to FIG. 4 9 and the repeatedexplanation is omitted.

The present embodiment differs from Embodiment 36 in a configuration ofthe vertical gate electrode.

In the embodiment, a vertical gate electrode 46 b are formed under theplanar gate electrode 44 as well as along one edge extending in thehorizontal direction at the outer peripheral portion of the photodioderegion 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 46 b andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 43. In the embodiment, the planargate electrode 44 is shared between pixels adjacent in the horizontaldirection. Accordingly, signal charges of two pixels adjacent in thehorizontal direction are transferred at the same time by application ofpositive voltage to the vertical gate electrode 46 b and the planar gateelectrode 44. Then, signal charges accumulated in respective photodiodesPD are read to respective floating diffusion regions 43.

In the embodiment, the planar gate electrode 44 and the floatingdiffusion region 43 are shared between adjacent two pixels, therebyreducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 38

[Example in which a Planar Gate Electrode, a Vertical Gate Electrode anda Floating Diffusion Region are Shared Between Adjacent Pixels]

FIG. 51 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 38 of the invention. In FIG. 51 , samesymbols are given to portions corresponding to FIG. 49 and FIG. 50 , andthe repeated explanation is omitted.

The present embodiment differs from Embodiment 37 in a configuration ofthe vertical gate electrode.

In the embodiment, the vertical gate electrode 46 b are formed under theplanar gate electrode 44 as well as along one edge extending in thehorizontal direction at the outer peripheral portion of the photodioderegion 60. Additionally, the vertical gate electrode 47 is formed underthe planar gate electrode 44 at the outer peripheral portion of thephotodiode region 60 so as to be shared between pixels adjacent in thehorizontal direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 46 b, 47and the planar gate electrode 44. Then, the transferred signal chargesare read to the floating diffusion region 43 through a region betweenthe vertical gate electrode 46 b and the vertical gate electrode 47. Inthe embodiment, the vertical gate electrode 47 is shared between pixelsadjacent in the horizontal direction. Accordingly, signal charges of twopixels adjacent in the horizontal direction are transferred at the sametime by application of positive voltage to the vertical gate electrodes46 b, 47 and the planar gate electrode 44. Then, signal chargesaccumulated in respective photodiodes PD are read to respective floatingdiffusion regions 43.

In the embodiment, the planar gate electrode 44, the vertical gateelectrode 47 and the floating diffusion region 43 are shared betweenadjacent pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 39

[Example in which a Planar Gate Electrode, a Vertical Gate Electrode anda Floating Diffusion Region are Shared Between Adjacent Pixels]

FIG. 52 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 39 of the invention. In FIG. 52 , samesymbols are given to portions corresponding to FIG. 51 , and therepeated explanation is omitted.

Part of the present embodiment differs from Embodiment 38 in aconfiguration of the vertical gate electrode.

In the embodiment, the vertical gate electrode 46 a is formed under theplanar gate electrode 44 as well as along one edge extending in thevertical direction of the outer peripheral portion of the photodioderegion 60. Additionally, the vertical gate electrode 46 b is formedunder the planar gate electrode 44 as well as along one edge extendingin the horizontal direction of the outer peripheral portion of thephotodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 46 a, 46b and the planar gate electrode 44. Then, the transferred signal chargesare read to the floating diffusion region 43 through a region betweenthe vertical gate electrode 46 a and the vertical gate electrode 46 b.In the embodiment, the planar gate electrode 44 is shared between pixelsadjacent in the horizontal direction. Accordingly, signal charges of twopixels adjacent in the horizontal direction are transferred at the sametime by application of positive voltage to the vertical gate electrodes46 a, 46 b and the planar gate electrode 44. Then, signal chargesaccumulated in respective photodiodes PD are read to respective floatingdiffusion regions 43.

In the embodiment, the planar gate electrode 44 is shared betweenadjacent two pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 40

[Example in which a Floating Diffusion Region is Shared Between AdjacentPixels]

FIG. 53 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 40 of the invention. In FIG. 53 , samesymbols are given to portions corresponding to FIG. 16 , and therepeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the planar gate electrode19, the vertical gate electrode 12 integrally formed with the planargate electrode 19 and the floating diffusion region 43.

The planar gate electrode 19 is formed at a corner portion of thephotodiode region 60. The vertical gate electrode 12 is formed under theplanar gate electrode 19 positioned at the corner portion of thephotodiode region 60, which is formed integrally with the planar gateelectrode 19. The vertical gate electrode 12 has a cross-section of anapproximately square shape, which is formed to have a size not enough tocover the whole lower surface of the planar gate electrode 19 formed atthe corner portion of the photodiode region 60.

The floating diffusion region 43 is formed at a region outside thephotodiode region 60, which is adjacent to the semiconductor substrate13 under the planar gate electrode 19. The floating diffusion region 43is shared between pixels adjacent in the vertical direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 12 andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 43. In the embodiment, thevertical gate electrode 12 is formed to have a size not enough to coverthe whole lower surface of the planar gate electrode 19. Accordingly,the transfer of signal charges transferred to the floating diffusionregion 43 by the potential gradient in the photodiode region 60 is notinterrupted by the vertical gate electrode 12.

In the embodiment, the floating diffusion region 43 is shared betweenadjacent pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 41

[Example in which a Floating Diffusion Region is Shared Between AdjacentPixels]

FIG. 54 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 41 of the invention. In FIG. 54 , samesymbols are given to portions corresponding to FIG. 53 , and therepeated explanation is omitted.

The present embodiment differs from Embodiment 40 in a configuration ofthe vertical gate electrode.

In the embodiment, the vertical gate electrode 46 b is formed under theplanar gate electrode 19 as well as along one edge extending in thehorizontal direction at the outer peripheral portion of the photodioderegion 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the semiconductor substrate, which is made byapplication of positive voltage to the vertical gate electrodes 46 b andthe planar gate electrode 19.

In the embodiment, the floating diffusion region 43 is shared betweenadjacent two pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 42

[Example in which a Floating Diffusion Region is Shared Between AdjacentPixels]

FIG. 55 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 42 of the invention. In FIG. 55 , samesymbols are given to portions corresponding to FIG. 54 , and therepeated explanation is omitted.

The present embodiment differs from Embodiment 41 in a configuration ofthe vertical gate electrode.

In the embodiment, the vertical gate electrode 46 a is formed under theplanar gate electrode 19 as well as along one edge extending in thevertical direction at the outer peripheral portion of the photodioderegion 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 46 a andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 43.

In the embodiment, the floating diffusion region 43 is shared betweenadjacent pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 43

[Example in which a Floating Diffusion Region is Shared Between AdjacentPixels]

FIG. 56 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 43 of the invention. In FIG. 56 , samesymbols are given to portions corresponding to FIG. 55 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 42 in a configuration of the vertical gate electrode.

In the embodiment, the vertical gate electrode 46 a is formed under theplanar gate electrode 19 as well as along one edge extending in thevertical direction at the outer peripheral portion of the photodioderegion 60. Additionally, the vertical gate electrode 46 b is formedunder the planar gate electrode 19 as well as along one edge extendingin the horizontal direction at the outer peripheral portion of thephotodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 46 a, 46b and the planar gate electrode 19. Then, the transferred signal chargesare read to the floating diffusion region 43 through a region betweenthe vertical gate electrode 46 a and the vertical gate electrode 46 b.

In the embodiment, the floating diffusion region 43 is shared betweenadjacent pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 44

[Example in which a Floating Diffusion Region is Shared Among AdjacentPixels]

FIG. 57 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 44 of the invention. In FIG. 57 , samesymbols are given to portions corresponding to FIG. 53 , and therepeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the planar gate electrode19, the vertical gate electrode 12 integrally formed with the planargate electrode 19 and a floating diffusion region 51.

The planar gate electrode 19 is formed at the corner portion of thephotodiode region 60. The vertical gate electrode 12 is formed under theplanar gate electrode 19 positioned at the corner portion of thephotodiode region, which is integrally formed with the planar gateelectrode 19. The vertical gate electrode 12 has a cross section of anapproximately square shape, which is formed to have a size not enough tocover the whole lower surface of the planar gate electrode 19 formed atthe corner portion of the photodiode region 60.

The floating diffusion region 51 is formed at a region outside thephotodiode region 60, which is adjacent to the semiconductor substrate13 under the planar gate electrode 19. The floating diffusion region 51is shared among four pixels, which are pixels adjacent in the verticaldirection and pixels adjacent in the horizontal direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 51.

In the embodiment, the floating diffusion region 51 is shared amongadjacent four pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 45

[Example in which a Floating Diffusion Region is Shared Among AdjacentPixels]

FIG. 58 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 45 of the invention. In FIG. 58 , samesymbols are given to portions corresponding to FIG. 57 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 44 in a configuration of the vertical gate electrode.

According to the embodiment, in pixels formed on one of diagonal lines,the vertical gate electrode 46 a is formed under the planar gateelectrode 19 as well as along one edge extending in the verticaldirection at the outer peripheral portion of the photodiode region 60.On the other hand, in pixels formed on the other of diagonal lines, thevertical gate electrode 46 b is formed under the planar gate electrode19 as well as along one edge extending in the horizontal direction atthe outer peripheral portion of the photodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 46 a, 46b and the planar gate electrode 19. Then, the transferred signal chargesare read to the floating diffusion region 51.

In the embodiment, the floating diffusion region 51 is shared amongadjacent four pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 46

[Example in which a Floating Diffusion Region is Shared Among AdjacentPixels]

FIG. 59 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 46 of the invention. In FIG. 59 , samesymbols are given to portions corresponding to FIG. 58 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 45 in a configuration of the vertical gate electrode.

In the embodiment, the vertical gate electrode 46 a is formed under theplanar gate electrode 19 as well as along one edge extending in thevertical direction at the outer peripheral portion of the photodioderegion 60. Additionally, the vertical gate electrode 46 b is formedunder the planar gate electrode 19 as well as along one edge extendingin the horizontal direction at the outer peripheral portion of thephotodiode region 60.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrodes 46 a, 46b and the planar gate electrode 19. Then, the transferred signal chargesare read to the floating diffusion region 51.

In the embodiment, the floating diffusion region 51 is shared amongadjacent four pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 47

[Example in which a Charge Readout Transistor is Included in Each Pixel]

FIG. 60 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 47 of the invention. In FIG. 60 , samesymbols are given to portions corresponding to FIG. 18 , and therepeated explanation is omitted.

In the solid-state imaging device of the embodiment, the charge readouttransistor Tr included in one pixel includes the planar gate electrode19, the vertical gate electrode 12 integrally formed with the planargate electrode 19 and the floating diffusion region 11.

The planar gate electrode 19 is formed at the corner portion of thephotodiode region 60. The vertical gate electrode 12 is formed under theplanar gate electrode 19 positioned at the corner portion of thephotodiode region 60 integrally with the planar gate electrode 19. Thevertical gate electrode 12 has a cross section of an approximatelysquare shape, which is formed to have a size not enough to cover thewhole lower surface of the planar gate electrode 19 formed at the cornerportion of the photodiode region 60.

The floating diffusion region 11 is formed at a region inside thephotodiode region 60 as well as adjacent to the semiconductor 13 underthe planar gate electrode 19.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 11. In the embodiment, thevertical gate electrode 12 is formed to have a size not enough to coverthe whole lower surface of the planar gate electrode 23. Therefore, thetransfer of signal charges transferred to the floating diffusion region11 by the potential gradient of the photodiode region 60 is notinterrupted by the vertical gate electrode 12.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 48

[Example in which a Charge Readout Transistor is Included in Each Pixel]

FIG. 61 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 48 of the invention. In FIG. 61 , samesymbols are given to portions corresponding to FIG. 60 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 47 in a configuration of the vertical gate electrode.

A vertical gate electrode 52 is formed under the planar gate electrode19 so that a side surface of the vertical gate electrode 52 on thephotodiode region 60 side has a larger area.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 52 andthe planar gate electrode 19. Then, the transferred signal charges areread to the floating diffusion region 11. Since the vertical gateelectrode 52 is formed so that the side surface thereof on thephotodiode region 60 side has a larger area in the embodiment, largerpotential gradient can be formed in the photodiode region 60.Additionally, the floating diffusion region 11 is formed closer to thephotodiode region 60 than the vertical gate electrode 52 inside thephotodiode region 6 0, therefore, signal charges to be transferred arenot interrupted by the vertical gate electrode 52 even when the verticalgate electrode 52 is formed to have a large size as described above.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 49

[Example in which the Planar Gate Electrode is Shared Between AdjacentPixels]

FIG. 62 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 49 of the invention. In FIG. 62 , samesymbols are given to portions corresponding to FIG. 47 , and therepeated explanation is omitted.

In the embodiment, the charge readout transistor Tr included in onepixel includes the planar gate electrode 44, the vertical gate electrode12 integrally formed with the planar gate electrode 44 and the floatingdiffusion region 11.

The planar gate electrode 44 is formed at the corner portion of thephotodiode region 60. The planar gate electrode 44 is shared betweenpixels adjacent in the horizontal direction. The vertical gate electrode12 is formed under the planar gate electrode 44 positioned at the cornerportion of the photodiode region 60, which is integrally formed with theplanar gate electrode 44. The vertical gate electrode 12 has a crosssection of an approximately square shape, which is formed to have a sizenot enough to cover the whole lower surface of the planar gate electrode19 formed at the corner portion of the photodiode region 60.

The floating diffusion region 11 is formed at a region inside thephotodiode region 60 as well as adjacent to the semiconductor substrate13 under the planar gate electrode 44.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 11. In the embodiment, thevertical gate electrode 12 is formed to have a size not enough to coverthe whole lower surface of the planar gate electrode 19. Therefore, thetransfer of signal charges transferred to the floating diffusion region11 by the potential gradient of the photodiode region 60 is notinterrupted by the vertical gate electrode 12.

In the embodiment, the planar gate electrode 44 is shared betweenadjacent pixels, thereby reducing the pixel size. Moreover, since thefloating diffusion region 11 is formed inside the photodiode region 60inside the solid-state imaging device of the embodiment, therefore, thepixel size can be reduced.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 50

[Example in which the Planar Gate Electrode is Shared Between AdjacentPixels]

FIG. 63 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 50 of the invention. In FIG. 63 , samesymbols are given to portions corresponding to FIG. 62 , and therepeated explanation is omitted.

The present embodiment differs from Embodiment 49 in a configuration ofthe vertical gate electrode.

A vertical gate electrode 52 is formed under the planar gate electrode44 so that a side surface of the vertical gate electrode 52 on thephotodiode region 60 side has a larger area.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 52 andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 11. Since the vertical gateelectrode 52 is formed so that the side surface thereof on thephotodiode region 60 side has a larger area in the embodiment, largerpotential gradient can be formed in the photodiode region 60.Additionally, the floating diffusion region 11 is formed closer to thephotodiode region 60 than the vertical gate electrode 52 inside thephotodiode region 6 0, therefore, signal charges to be transferred arenot interrupted by the vertical gate electrode 52 even when the verticalgate electrode 52 is formed to have a larger size as described above.

In the embodiment, the planar gate electrode 44 is shared betweenadjacent pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 51

[Example in which a Planar Gate Electrode is Shared Between AdjacentPixels]

FIG. 64 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 51 of the invention. In FIG. 64 , samesymbols are given to portions corresponding to FIG. 63 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 50 in a configuration of the vertical gate electrode.

A vertical gate electrode 53 of the embodiment is formed under theplanar gate electrode 44 so that a side surface of the vertical gateelectrode 53 on the photodiode region 60 side has a larger area. Thevertical gate electrode 53 is formed extending to pixels adjacent in thehorizontal direction under the planar gate electrode 44 formed so as tobe shared between pixels adjacent in the horizontal direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 53 andthe planar gate electrode 44. Then, the transferred signal charges areread to the floating diffusion region 11. Since the vertical gateelectrode 53 is formed so that the side surface thereof on thephotodiode region 60 side has a larger area in the embodiment, largerpotential gradient can be formed in the photodiode region 60.Additionally, the floating region 11 is formed closer to the photodioderegion 60 than the vertical gate electrode 53 inside the photodioderegion 60, therefore, signal charges to be transferred are notinterrupted by the vertical gate electrode 53 even when the verticalgate electrode 53 is formed to have a larger size as described above.

In the embodiment, the planar gate electrode 44 is shared betweenadjacent two pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 52

[Example in which a Planar Gate Electrode is Shared Among AdjacentPixels]

FIG. 65 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 52 of the invention. In FIG. 65 , samesymbols are given to portions corresponding to FIG. 62 , and therepeated explanation is omitted.

In the embodiment, the charge readout transfer Tr included in one pixelincludes a planar gate electrode 54, the vertical gate electrode 12integrally formed with the planar gate electrode 54 and the floatingdiffusion region 11.

The planar gate electrode 54 is formed at the corner portion of thephotodiode 60. The planar gate electrode 54 is shared between pixelsadjacent in the horizontal direction as well as between pixels adjacentin the vertical direction. That is, the planar gate electrode 54 isshared among four pixels. Additionally, the vertical gate electrode 12is formed under the planar gate electrode 54 positioned at the cornerportion of the photodiode 60 integrally with the planar gate electrode54.

The floating diffusion region 11 is formed at a region inside thephotodiode region 60 as well as adjacent to the semiconductor substrate13 under the planar gate electrode 54.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 12 andthe planar gate electrode 54. Then, the transferred signal charges areread to the floating diffusion region 11.

In the embodiment, the planar gate electrode 54 is shared among adjacentfour pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 53

[Example in which a Planar Gate Electrode is Shared Among AdjacentPixels]

FIG. 66 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 53 of the invention. In FIG. 66 , samesymbols are given to portions corresponding to FIG. 65 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 52 in a configuration of the vertical gate electrode.

The vertical gate electrode 52 is formed under the planar gate electrode54 so that a side surface of the vertical gate electrode 52 on thephotodiode region 60 side has a larger area.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 52 andthe planar gate electrode 54. Then, the transferred signal charges areread to the floating diffusion region 11. Since the vertical gateelectrode 52 is formed so that the side surface thereof on thephotodiode region 60 side has a larger area in the embodiment, largerpotential gradient can be formed in the photodiode region 60.Additionally, the floating diffusion region 11 is formed closer to thephotodiode region 60 than the vertical gate electrode 52 inside thephotodiode region 6 0, therefore, signal charges to be transferred arenot interrupted by the vertical gate electrode 52 even when the verticalgate electrode 52 is formed to have a larger size as described above.

In the embodiment, the planar gate electrode 54 is shared among adjacentfour pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 54

[Example in which a Planar Gate Electrode is Shared Among AdjacentPixels]

FIG. 67 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 54 of the invention. In FIG. 67 , samesymbols are given to portions corresponding to FIG. 66 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 53 in a configuration of the vertical gate electrode.

The vertical gate electrode 53 is formed under the planar gate electrode54 so that a side surface of the vertical gate electrode 53 on thephotodiode region 60 side has a larger area. The vertical gate electrode53 is formed extending to pixels adjacent in the horizontal directionunder the planar gate electrode 54 which is formed so as to be sharedbetween pixels adjacent in the horizontal direction.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 53 andthe planar gate electrode 54. Then, the transferred signal charges areread to the floating diffusion region 11. Since the vertical gateelectrode 53 is formed so that the side surface thereof on thephotodiode region 60 side has a larger area in the embodiment, largerpotential gradient can be formed in the photodiode region 60.Additionally, the floating diffusion region 11 is formed closer to thephotodiode region 60 than the vertical gate electrode 53 even when thevertical gate electrode 53 is formed to have a larger size as describedabove.

In the embodiment, the planar gate electrode 54 is shared among adjacentfour pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 55

[Example in which a Planar Gate Electrode is Shared Among AdjacentPixels]

FIG. 68 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 55 of the invention. In FIG. 68 , samesymbols are given to portions corresponding to FIG. 67 , and therepeated explanation is omitted. The present embodiment differs fromEmbodiment 54 in a configuration of the vertical gate electrode.

A vertical gate electrode 55 of the embodiment is formed under theplanar gate electrode 54 so that a side surface of the vertical gateelectrode 55 on the photodiode region 60 side has a larger area. Thevertical gate electrode 55 is formed extending to pixels adjacent in thehorizontal direction as well as in the vertical direction under theplanar gate electrode 54 which is formed so as to be shared among pixelsadjacent in the horizontal direction as well as in the verticaldirection.

Also in the solid-state imaging device having the above configuration,signal charges accumulated in the photodiode PD are transferred alongthe potential gradient in the photodiode region 60, which is made byapplication of positive voltage to the vertical gate electrode 55 andthe planar gate electrode 54. Then, the transferred signal charges areread to the floating diffusion region 11. Since the vertical gateelectrode 55 is formed so that the side surface thereof on thephotodiode region 60 side has a larger area in the embodiment, largerpotential gradient can be formed in the photodiode region 60.Additionally, the floating diffusion region 11 is formed closer to thephotodiode region 60 than the vertical gate electrode 55 inside thephotodiode region 6 0, therefore, signal charges to be transferred arenot interrupted by the vertical gate electrode 55 even when the verticalgate electrode 55 is formed to have a larger size as described above.

In the embodiment, the planar gate electrode 54 is shared among adjacentfour pixels, thereby reducing the pixel size.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Embodiment 56 [Example Including Two Layers of Photodiodes]

FIG. 69 shows a schematic planar configuration of a solid-state imagingdevice according to Embodiment 56 of the invention and FIG. 70 shows across-sectional view taken along A-A line of FIG. 69 . In FIG. 69 andFIG. 70 , same symbols are given to portions corresponding to FIG. 6 andFIG. 7 , and the repeated explanation is omitted. The present embodimentdiffers from Embodiment 1 in a configuration of the photodiode.

As shown in FIG. 70 , in the solid-state imaging device of theembodiment, a first photodiode PD1 and a second photodiode PD2 areformed by being stacked in the depth direction of the semiconductorsubstrate 13 inside the photodiode region 60 of the semiconductorsubstrate 13. The first photodiode PD1 includes a p-type highconcentration impurity region (p+ region) 16 a, an n-type highconcentration impurity region (n+ region) 15 a and an n-type impurityregion (n region) 14 a. The first photodiode PD1 is mainly formed by apn junction “j1” which is a joint surface between the p+ region 16 a andthe n+ region 15 a. The second photodiode PD2 includes a p+ region 16 b,an n+ region 15 b and an n region 14 b which are sequentially formedunder the n+ region 15 a included in the photodiode PD1. The secondphotodiode PD2 is mainly formed by a pn junction “j2” which is a jointsurface between the p+ region 16 b and the n+ region 15 b.

As described above, in the embodiment, the photodiode formed within thephotodiode region 60 has a configuration in which two layers ofphotodiodes are stacked in the depth direction of the semiconductorsubstrate 13.

The vertical gate electrodes 12 a, 12 b are formed by being buried inthe semiconductor substrate 13 from the surface of the semiconductorsubstrate 13 to the depth where the electrodes touch the pn junction“j2” of the second photodiode PD2 formed at a deep position in thesemiconductor substrate 13 through a gate insulating film 18.

In the solid-state imaging device having the above configuration,positive voltage is applied to the vertical gate electrodes 12 a, 12 bin the same manner as Embodiment 1, thereby changing the potentialgradient in the photodiode region 60. Then, signal charges accumulatedin the first photodiode PD1 and the second photodiode PD2 aretransferred in the direction shown by an arrow R1 at the same time alongthe potential gradient in the photodiode region 60. Consequently, thesignal charges are read to the floating diffusion region 11.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 1 can be obtained.

Furthermore, the solid-state imaging device of the embodiment has theconfiguration in which the two photodiodes of the first photodiode PD1and the second photodiode PD2 are stacked inside the photodiode region60. Accordingly, the saturation charge amount (Qs) in the photodioderegion 60 is increased. Since signal charges accumulated in the firstphotodiode PD1 and the second photodiode PD2 are read at the same time,sensitivity can be improved.

Though the stacked structure including two photodiodes of the firstphotodiode PD1 and the second photodiode PD2 is applied in theembodiment, it is also preferable that plural layers including more thantwo layers can be stacked. In that case, the vertical gate electrodes 12a, 12 b are formed so as to reach the pn junction of a photodiode whichis formed at the deepest position from the surface side of thesemiconductor substrate 13.

As described above, the configuration in which plural photodiodes arestacked in the depth direction of the semiconductor substrate 13 can beapplied to examples in which the floating diffusion region is notincluded inside the photodiode region in Embodiments 2 to 55. Since thesaturation charge amount (Qs) in the photodiode region 60 is increasedalso in these cases, sensitivity can be improved.

In the solid-state imaging devices according to above describedEmbodiments 1 to 55, cases in which the invention is applied to theimage sensor in which unit pixels detecting signal charges correspondingto the light amount of visible light as physical quantity are arrangedin a matrix state have been cited and explained. However, theapplication of the invention is not limited to the image sensor, and itis possible that the invention is applied to all column-type solid-stateimaging devices in which column circuits are arranged at respectivepixel columns in a pixel array portion.

Additionally, the application of the invention is not limited to thesolid-state imaging device in which distribution of the incident lightamount of visible light is detected and imaged as an image, and it ispossible that the invention is applied to a solid-state imaging devicein which distribution of the incident light amount of infrared rays,X-rays or particles is imaged as an image. In a broad sense, theinvention can be also applied to all solid-state imaging devices(physical-quantity distribution detection devices) such as a fingerprintdetection sensor which detects distribution of other physical quantitiessuch as pressure or capacitance and images the distribution as an image.

Moreover, the invention is not limited to the solid-state imaging devicewhich reads pixel signals from respective unit pixels by scanningrespective unit pixels in the pixel array portion by the row. Forexample, the invention can be also applied to an X-Y address typesolid-state imaging device which selects an arbitrary pixel by the pixeland reads signals by the pixel from the selected pixel.

The solid-state imaging device may be formed as a one-chip or may beformed as a module state having imaging functions, in which an imagingunit, a signal processing unit or an optical system are integrallypackaged.

The invention is not limited to the solid-state imaging device but canbe applied to an imaging apparatus. Here, the imaging apparatus means anelectronic apparatus having imaging functions, for example, camerasystems such as a digital still camera and a digital video camera, acellular phone, and the like. There is a case in which the module stateto be mounted on the electronic apparatus, namely, a camera module isdefined as an imaging apparatus.

Embodiment 57 [Electronic Apparatus]

Hereinafter, an embodiment in which the solid-state imaging deviceaccording to the above embodiments of the invention is used in anelectronic apparatus is shown. In the following description, an examplein which a solid-state imaging device 1 applying any one of Embodiments1 to 56 is used for a camera will be explained.

FIG. 71 shows a schematic planar configuration of a camera according toEmbodiment 57 of the invention. The camera according to the embodimentis, for example, a video camera which can image still pictures or movingpictures. A camera according to the embodiment includes the solid-stateimaging device 1, an optical lens 110, a shutter device 111, a drivecircuit 112 and a signal processing circuit 113. The solid-state imagingdevice according to any one of Embodiments 1 to 55 can be applied to thesolid-state imaging device 1.

The optical lens 110 images an image light (incident light) from asubject on an imaging surface of the solid-state imaging device 1.Accordingly, signal charges are accumulated in the solid-state imagingdevice 1 for a fixed period of time. The optical lens 110 may be anoptical lens system including plural optical lenses.

The shutter device 111 controls an illumination period and a shieldingperiod of light with respect to the solid-state imaging device 1.

The drive circuit 112 supplies a drive signal for controlling transferoperation of the solid-state imaging device 1 and shutter operation ofthe shutter device 111. The signal transfer is performed by a drivesignal (timing signal) supplied from the drive circuit 112. The signalprocessing circuit 113 performs various signal processing. Video signalswhich have received signal processing are stored in a storage mediumsuch as a memory or outputted to a monitor.

In the solid-state imaging device 1 a used for the camera according tothe embodiment, the loss of the saturation charge amount (Qs) at thecentral portion of the photodiode can be reduced, thereby improving thesaturation charge amount (Qs) and sensitivity. Additionally, thesolid-state imaging device in which the configuration of the chargereadout transistor is shared between adjacent pixels is used, therebyreducing the pixel size. Accordingly, it is possible to reduce the sizeof the camera in the camera according to the embodiment as well as it ispossible to obtain the camera having higher image quality. That is,miniaturization, high resolution and high quality of the electronicapparatus can be realized.

A schematic configuration of an embodiment of a solid-state imagingdevice, namely, a CMOS solid-state imaging device to which the inventionis applied is shown in FIG. 5 . The solid-state imaging device 1 of theembodiment includes a pixel portion 3 (so-called imaging area) in whichpixels 2 including plural photoelectric conversion elements aretwo-dimensionally arranged on a semiconductor substrate 1011, forexample, a silicon substrate and a peripheral circuit portion. The pixel2 includes a photodiode to be, for example, a photoelectric conversionelement and plural pixel transistors (so-called MOS transistors) Theplural pixel transistors include, for example, three transistors, forexample, a transfer transistor, a reset transistor and an amplificationtransistor. It may include four transistors by adding a selectiontransistor. An equivalent circuit of a unit pixel is the same as acommon configuration. An example of the unit pixel will be shown later.

The peripheral circuit portion includes a vertical drive circuit 4,column signal processing circuits 5, a horizontal drive circuit 6, anoutput circuit 7, a control circuit 8 and the like.

The control circuit 8 generates a clock signal, a control signal and thelike to be references of operations of the vertical drive circuit 4, thecolumn signal processing circuits 5, the horizontal drive circuit 6 andthe like based on a vertical synchronization signal, a horizontalsynchronization signal and a master clock, inputting these signals tothe vertical drive circuit 4, the column signal processing circuits 5,the horizontal drive circuit 6 and the like.

The vertical drive circuit 4 includes, for example, a shift register,selectively scanning respective pixels 2 in the pixel portion 3 by therow sequentially in the vertical direction, supplying pixel signalsbased on signal charges generated in accordance with the light receivingamount, for example, in photodiodes to be photoelectric conversionelements of respective pixels 2 to the column signal processing circuits5 through vertical signal lines 9.

The column signal processing circuits 5 are arranged, for example, atrespective columns of pixels 2, performing signal processing such asnoise removal to signals outputted from pixels 2 of one row by the pixelcolumn using a signal from black reference pixels (formed around aneffective pixel area). That is, the column signal processing circuits 5perform signal processing such as a CDS and signal amplification forremoving fixed pattern noise peculiar to the pixels 2. Horizontalselection switches (not shown) are provided at output stages of thecolumn signal processing circuits 5 between the circuits 5 and ahorizontal signal line 1010.

The horizontal drive circuit 6 includes, for example, a shift register,sequentially selecting respective column signal processing circuits 5 bysequentially outputting horizontal scanning pulses to thereby allowrespective column signal processing circuits 5 to output pixel signalsto a horizontal signal line 1010.

The output circuit 7 performs signal processing to signals sequentiallysupplied from respective column signal processing circuits 5 through thehorizontal signal line 1010 and output the signals.

FIG. 72 shows an equivalent circuit of a unit pixel. A unit pixel 1002according to an example of the circuit includes a photodiode PD which isone photoelectric conversion element and three pixel transistors whichare a transfer transistor Tr1, a reset transistor Tr2 and anamplification transistor Tr3. These transistors Tr1 to Tr3 use n-channelMOS transistors in the example.

The transfer transistor Tr1 is connected between a cathod of thephotodiode PD and a floating diffusion (FD). Signal charges (electronsin the example) which have been photoelectrically converted andaccumulated in the photodiode PD are transferred to the floatingdiffusion (FD) by application of a transfer pulse to a transfer gate.

In the reset transistor Tr2, a drain thereof is connected to a selectionpower supply SELVDD and a source thereof is connected to the floatingdiffusion (FD). Before the transfer of signal charges from thephotodiode PD to the floating diffusion (FD), a reset pulse is appliedto a reset gate to thereby reset the potential of the floating diffusion(FD). The selection power supply SELVDD is a power supply whichselectively takes a VDD level and a GND level as a power supply voltage.

The amplification transistor Tr3 has a source follower configuration, inwhich an amplification gate thereof is connected to the floatingdiffusion (FD), a drain thereof is connected to the selection powersupply SELVDD and a source thereof is connected to a vertical signalline 1009. When the selection power supply SELVDD is in the VDD level,the circuit is in the operation state and a pixel 1002 is selected. Thepotential of the floating diffusion (FD) which has been reset by thereset transistor Tr2 is outputted to the vertical signal line 1009 as areset level. Furthermore, the potential of the floating diffusion (FD)to which signal charges have been transferred by the transfer transistorTr1 is outputted to the vertical signal line 1009 as a signal level.

When the solid-state imaging device of the embodiment is configured as aback-illuminated type in which light is incident from the back side ofthe substrate, a multilevel-wiring layer is formed at an upper side ofthe surface of the semiconductor substrate in which a pixel portion 1003and a peripheral circuit portion are formed through an interlayerinsulating film, and the back side will be a light incident surface(so-called light receiving surface). Over the pixel portion 1003 on theback side, on-chip color filters and further on-chip micro lenses areformed through a planarization film.

When the solid-state imaging device of the embodiment is configured as afront-illuminated type in which light is incident from the front surfaceside of the substrate, a multilevel-wiring layer is formed at an upperside of the surface of the substrate in which a pixel portion 1003 and aperipheral circuit portion are formed through an interlayer insulatingfilm. In the pixel portion 1003, on-chip color filters and furtheron-chip micro lenses are formed over the multilevel-wiring layer througha planarization film.

Embodiment 58 [Configuration of a Solid-State Imaging Device]

FIG. 73 shows a solid-state imaging device according to Embodiment 58 ofthe invention. FIG. 73 shows a cross-sectional configuration of arelevant part of the pixel portion 1003. In a solid-state imaging device1101 according to the embodiment, a pixel isolation region 1021 isformed on a first-conductive type, for example, a p-type siliconsemiconductor substrate 1011, and the unit pixel 1002 includingphotodiodes PD and pixel transistors is formed at a region demarcated bythe pixel isolation region 1021.

In the unit pixel 1002, photodiodes PD (PD1, PD2 and PD3) to be pluralphotoelectric conversion elements are formed in the semiconductorsubstrate 1011 in a layered manner, and the transfer transistor Tr1 isformed as a vertical transistor. That is, plural layers of photodiodesPD (PD1, PD2 and PD3) are formed by alternately stacking an n-typesemiconductor region which is a second conductive type and a p-typesemiconductor region which is a first conductive type in the depthdirection of the semiconductor substrate 1011. The pixel isolationregion 1021 can be made by, for example, the p-type semiconductorregion.

In the vertical transfer transistor Tr1, a groove portion 1022vertically extending in the depth direction of the semiconductorsubstrate 1011, and a columnar transfer gate electrode 1024 is formed bybeing buried into the groove portion 1022 through a gate insulating film1023. The transfer gate electrode is formed so that an upper portionthereof protrudes along the surface of the semiconductor substrate 1011,and a floating diffusion (FD) 1040 is formed on the surface of thesemiconductor substrate with an n-type semiconductor region so as toclose to the protruding portion of the transfer gate. The transfertransistor Tr1 is formed at the end of the unit pixel 2, that is, theend of the photodiode PD (P1I to PD3).

The first photodiode PD1 is configured by including an n-typesemiconductor region 1028 and a p-type semiconductor region 1029 thereonso that a pn junction surface is formed at the deepest position of thesemiconductor substrate 1011. The second photodiode PD2 is configured byincluding an n-type semiconductor region 1030 and a p-type semiconductorregion 1031 thereon so that a pn junction surface is formed at aposition of an intermediate depth in the semiconductor substrate 1011.The third photodiode PD3 is configured by including an n-typesemiconductor region 1032 and a p-type semiconductor region 1033 thereonso that a pn junction surface is formed at a position on the surfaceside of the semiconductor substrate 1011.

The third photodiode PD3 formed on the surface side of the semiconductorsubstrate 1011 is formed close to the transfer gate electrode 1024 side,leaving a p-type semiconductor well region 1027 in which the resettransistor Tr2 and the amplification transistor Tr3 which are pixeltransistors are formed.

At the back side of the semiconductor substrate 1011, an n-typesemiconductor region (n-region) 1037 having lower impurity concentrationthan then-type semiconductor region 1028 is formed from a portion justunder the n-type semiconductor region 1028 of the first photodiode PD1to a portion just under the transfer gate portion.

At the surface of the semiconductor substrate just under the portion ofthe transfer gate electrode 1024 protruding on the substrate surface, achannel region 1036 leading to the floating diffusion (FD) 1040 isformed so as to be adjacent to the p-type semiconductor region 1033 ofthe third photodiode PD3. The channel region 1036 is made of, forexample, the n-region or the p-region.

The floating diffusion (FD) 1040 is formed on the surface of thesemiconductor substrate by self-alignment using a sidewall 1048 as amask, which is formed at the portion of the transfer gate electrode 1024protruding on the substrate surface.

Further in the embodiment, an overflow path made of the n-typesemiconductor region is formed, which connects n-type semiconductorregions 1028, 1030 and 1032 to one another which will be chargeaccumulation regions of respective photodiodes PD1 to PD3. Moreover, anion implantation region for adjusting a gate interface is formed aroundthe transfer gate portion, that is, at an interface between the gateinsulating film 1023 formed at an inner surface of the groove portion1022 and the semiconductor substrate 1011. As the ion implantationregion, a p-type semiconductor region 1025 for suppressing dark currentis formed in the embodiment.

The p-type semiconductor region 1025 has functions of reconnecting andcancelling out charges (electrons) causing dark current and whitedefects generating from the interface between the gate insulating film1023 and the semiconductor substrate 1011 due to crystal defects ordeformation at the time of forming the groove portion 1022 usingselective etching and the like.

The overflow path 1035 is formed in contact with the p-typesemiconductor region 1025 for suppressing dark current, which doubles asa channel region 1034 of the transfer gate portion. The overflow path1035 has a potential shallower than depleted potentials in then-typesemiconductor regions 1028, 1030 and 1032 which are charge accumulationregions of the photodiodes PD (PD1 to PD3) at the time of accumulatingcharges. The overflow path 1035 also has a deep potential working as thechannel region 1034 for transferring signal charges from the photodiodesPD to the floating diffusion (FD) 1040 by a transfer pulse applied tothe transfer gate electrode at the time of transferring charges.

The overflow path 1035 has a function of accumulating charges which havenot been accumulated in a photodiode PD (charges exceeding thesaturation charge amount) at the time of receiving light into anadjacent photodiode PD, exceeding potential of the overflow path 1035.

The overflow path 1035 is formed in contact with the p-typesemiconductor region 1025 around the transfer gate portion. The overflowpath 1035 is formed between the p-type semiconductor regions 1029, 1031of the first and second photodiodes PD1, PD2 and the transfer gateportion. That is, the p-type semiconductor regions 1029, 1031 of thephotodiodes PD are formed deviated from the transfer gate portion by anecessary distance. In other words, the p-type semiconductor regions1029, 1031 are formed apart from the transfer gate portion by the widthof the overflow path 1035.

In the p-type semiconductor well region 1027 on the surface of thesemiconductor substrate 1011, n-type source/drain regions 1041, 1042 and1043 are formed. One pair of source/drain regions 1041, 1042 among themand a reset gate electrode 1045 formed through a gate insulating film1044 make up the reset transistor Tr2. The other pair of source/drainregions 1042, 1043 and an amplification gate electrode 1046 formedthrough the gate insulating film 1044 make up the amplificationtransistor Tr3. At a necessary position on the surface of thesemiconductor substrate 1011, a channel stop region 1047 made of thep-type semiconductor region is formed.

Furthermore, a multilevel-wiring layer in which plural layers of wiringare arranged through an interlayer insulating film is formed on thesurface of the semiconductor substrate 1011, though not shown.

The solid-state imaging device 1101 of the embodiment is configured as aback-illuminated type which illuminates light from the back side of thesubstrate. Accordingly, a p-type semiconductor region for suppressingdark current having high-concentration impurity is formed at the backside of the semiconductor substrate 1011 so as to touch then-typesemiconductor region (n-region) 1037. Moreover, on the surface of thep-type semiconductor region, a color filter and an on-chip micro lensare formed through a planarization film.

[Explanation of Operation]

Next, the operation of the solid-state imaging device 1011 according toEmbodiment 58 will be explained. At the time of accumulating charges,incident light is photoelectrically converted and signal charges aregenerated. The generated signal charges (electrons in the example) aremoved to the n-type semiconductor region along the potential gradientand accumulated in the photodiode PD at a position where the potentialenergy is at the minimum. That is, signal charges are accumulated in anyof then-type semiconductor region 1028 of the first photodiode PD1,then-type semiconductor region 1030 of the second photodiode PD2 whichare buried into the substrate, and then-type semiconductor region 1032of the third photodiode PD3 on the surface of the substrate. Therespective n-type semiconductor regions 1028, 1030 and 1032 are totallydepleted, and signal charges are accumulated into the potentialsthereof.

When strong light is incident, signal charges to be generated isincreased, which exceed the saturation charge amount of any of then-typesemiconductor regions of the photodiodes PD1, PD2 and PD3. When any ofthe photodiodes PD1, PD2 and PD3 reaches the saturation charge amount,charges exceeding the saturation charge amount exceed the potential ofthe overflow path 1035 and accumulated in the n-type semiconductorregion of the photodiode PD which has not been saturated.

As an example, when then-type semiconductor region 1028 of the firstphotodiode PD1 reaches the saturation charge amount first, chargesexceeding the saturation charge amount are accumulated in then-typesemiconductor region 1030 of the adjacent photodiode PD2 through theoverflow path 1035. When then-type semiconductor region 1030 of thephotodiode PD2 reaches the saturation charge amount, the chargesexceeding the saturation charge amount are accumulated in then-typesemiconductor region 1032 of the adjacent third photodiode PD3 throughthe overflow path 1035. Further, when then-type semiconductor region1032 of the third photodiode PD3 reaches the saturation charge amount,charges exceeding the saturation charge amount flow to the floatingdiffusion (FD) 1040 through the channel region 1036 and are discharged.

At the time of transferring charges, a transfer pulse (positive voltagein the embodiment) is applied to the transfer gate electrode 1024 of thetransfer transistor Tr1 to thereby turn on the transfer transistor Tr1.That is, potentials of the n-type semiconductor regions 1028, 1030 and1032 of respective photodiodes PD (PD1, PD2 and PD3) and the overflowpath 1035 connected to them are modulated by application of the transferpulse. That is, the potential of the overflow path 1035 becomes deep andthe potential gradient is formed toward the transfer gate portion. Thesignal charges accumulated in any of or all n-type semiconductor regions(1028, 103 0 and 103 2) of the photodiodes PD (PD1 to PD3) aretransferred to the transfer gate portion, following the potentialgradient. The signal charges which have reached the transfer gateportion are transferred to the channel region 1036 below the transfergate portion on the surface side of the substrate along the transfergate portion extending in the vertical direction of the substratethrough the overflow path 1035 which has become the transfer channel1034. After that, the signal charges are moved to the floating diffusion(FD) 1040, following the potential gradient formed in the channel region1036 below the transfer gate portion on the surface.

In the solid-state imaging device 1101 according to Embodiment 58,plural photodiodes PD (PD1 to PD3) are stacked in the depth direction ofthe semiconductor substrate 11, and then-type semiconductor regions 1028to 1032 of respective photodiodes PD1 to PD3 are connected through theoverflow path 1035. When any of photodiodes PD reaches the saturationcharge amount at the time of accumulating charges, charges exceeding thesaturation charge amount are accumulated in another photodiode PD whichhas not been saturated through the overflow path 1035. According to theconfiguration, the effective saturation charge amount (Qs) per a unitpixel is increased to thereby increase the dynamic range as well asimprove the contrast even when the pixel size is reduced.

The transfer transistor Tr1 is configured as the vertical transistor aswell as the transfer transistor Tr1 is formed at the end of the pixel 2,thereby taking the area of the photodiode PD (PD1 to PD3) and increasingthe saturation charge amount (Qs) per a unit pixel. The p-typesemiconductor region 1025 covering the whole transfer gate portion ofthe vertical transfer transistor Tr1 is formed, thereby suppressingoccurrence of dark current as well as suppressing occurrence of whitedefects caused by defects existing at side and bottom portions of thevertical transfer transistor Tr1.

The plural photodiodes PD are stacked and the overflow path 1035 isformed between the p-type semiconductor regions 1029, 1031 included inthese photodiodes PD and the transfer gate portion. That is, The p-typesemiconductor regions 1029, 1031 of the photodiodes PD are formeddeviated from the transfer gate portion by a necessary distance. Theoffset amount is adjusted, thereby completely transfering signal chargesaccumulated in the photodiodes PD in the vertical direction through thechannel region 1034 which doubles as the overflow path 1035.Additionally, it is possible to secure the saturation charge amount (Qs)of charges which can be accumulated in the photodiodes PD. Consequently,it is possible to obtain design of the configuration in which thecomplete transfer can be realized as well as the saturation chargeamount (Qs) can be secured.

[Manufacturing Method of the Solid-State Imaging Device (1)]

FIG. 74 to FIG. 81 show an example of a manufacturing method of asolid-state imaging device 1101 according to Embodiment 58.

First, as shown in FIG. 74 , the p-type semiconductor well region 1027is formed in the p-type semiconductor substrate 1011. The firstphotodiode PD1 and the second photodiode PD2 are formed by being stackedin the depth direction of the p-type semiconductor well region 1027. Thefirst photodiode PD1 is formed by stacking then-type semiconductorregion 1028 and the p-type semiconductor region 1029 so as to have thepn junction surface at the deepest portion of the semiconductorsubstrate 1011. The second photodiode PD2 is formed by stackingthen-type semiconductor region 1030 and the p-type semiconductor region1031 so as to form the pn junction surface similarly at an intermediateportion of the semiconductor substrate 1011. These n-type semiconductorregions 1028, 1030 as well as p-type semiconductor regions 1029, 1031are alternately formed so as to touch to one another.

Additionally, the overflow path 1035 made of then-type semiconductorregion is formed, which connects the respective n-type semiconductorregions 1028, 1030 of the photodiodes PD1, PD2. Also, then-typesemiconductor region 1037 having lower impurity concentration thanthen-type semiconductor region 1028, which extends to the bottom portionof the transfer gate portion which is formed later just under the n-typesemiconductor region 1028 of the first photodiode PD1 in thesemiconductor substrate 1011. The above respective regions are formed byusing ion implantation method.

Next, as shown in FIG. 75 , the pixel isolation region 1021 made of thep-type semiconductor region for demarcating a unit pixel is formed onthe semiconductor substrate 1011 by using the ion implantation method.Additionally, a channel stop region 1047 having a STI structure isformed at a necessary portion on the surface side of the semiconductorsubstrate 1011. The STI (Shallow Trench Isolation) structure is formedby forming a groove having a necessary depth by the selective etchingfrom the substrate surface and burying the groove with a silicon oxidefilm. The channel stop region 1047 having the STI structure correspondsto a so-called element isolation region.

Next, as shown in FIG. 76 , on the surface of the semiconductorsubstrate 1011, insulating films, for example, a silicon oxide film 1055and a silicon nitride film 1056 are formed so that they are on the samelevel as an upper surface of the channel stop region 1047. A resist mask1051 is formed over the silicon nitride film 1056, which has an opening1052 corresponding to a portion in which the vertical transfer gateelectrode is formed. The opening 1052 is formed so as to be positionedat the end of the pixel. The p-type semiconductor region 1025 forsuppressing dark current is formed in the semiconductor substrate 1011by ion-implanting a p-type impurity 1053 through the opening 1052 of theresist mask 1052. The p-type semiconductor region 1025 is formed so asto touch then-type overflow path 1035 connecting n-type semiconductorregions of respective photodiodes PD (PD1, PD2 and PD3) as well as toreach then-type semiconductor region 1037 having low impurityconcentration or to the vicinity thereof.

Next, as shown in FIG. 77 , isotropic etching is performed with respectto the opening 1052 of the resist mask 1051. A sidewall 1056 a made ofthe silicon nitride film 1056 is formed by the isotropic etching.

Next, as shown in FIG. 78 , the resist mask 1051 is removed, and thegroove portion 1022 is formed by performing selective etching to thep-type semiconductor region 1025 by anisotropic etching, using thesilicon nitride film 1056 having the sidewall 1056 a as a mask. Thegroove portion 1022 is formed by so-called self alignment. The p-typesemiconductor region 1025 and the groove portion 1022 are formed at theend of the pixel.

Then, as shown in FIG. 79 , the selective etching is allowed to proceed,thereby forming the groove portion 1022 so that the p-type semiconductorregion 1025 remains by the necessary width at a side wall in the grooveportion and a bottom surface of the groove portion. After that, thesilicon oxide film 1055 and the silicon nitride film 1056 are removed.

Next, as shown in FIG. 80 , the gate insulating film 1023 is formed overthe surface of the inner surface of the groove portion 1022 and thesurface of the semiconductor substrate 1011. As the gate insulating film1023, for example, a silicon oxide (SiO2) film can be used. After that,a gate electrode material, for example, a polysilicon film is formed soas to be buried into the groove portion 1022 as well as over the surfaceof the semiconductor substrate 1011 and is patterned. Accordingly, thecolumnar transfer gate electrode 1024 part of which protrudes on thesurface of the substrate as well as buried into the groove portion 1022is formed. Additionally, the reset gate electrode 1045 and theamplification gate electrode 1046 made of, for example, the samepolysilicon film are formed on the p-type semiconductor well region 1027on the substrate surface through the gate insulating film 1023.

Next, as shown in FIG. 81 , sidewalls 1048 are respectively formed atthe transfer gate electrode 1024, the reset gate electrode 1045 and theamplification gate electrode 1046. The n-type impurity is ion-implantedby using the respective sidewall 1048 as masks to thereby form thefloating diffusion (FD) 1040, the source/drain regions 1041, 1042 and1043 made of then-type semiconductor region by self alignment.Accordingly, the vertical transfer transistor Tr1, the reset transistorTr2 and the amplification gate transistor Tr3 are formed. The verticaltransfer transistor Tr1 is formed at the end of the pixel.

After the above process or before the above process, the thirdphotodiode PD3 is formed on the surface of the p-type semiconductor wellregion 1027. The photodiode PD3 is formed by stacking then-typesemiconductor region 1032 and the p-type semiconductor region 1033thereon by ion implantation to form the pn junction. Further, thechannel region 1036 made of the n-region or the p-region for suppressingdark current, which reaches the p-type semiconductor region 1025, isformed so as to adjacent to the p-type semiconductor region 1033.

After the above process, the multilevel wiring layer in which plurallayers of wiring are arranged on the surface side of the semiconductorsubstrate 1011 through the interlayer insulating film in the ordinarymanner. Also, on the back of the semiconductor substrate 1011, thep-type semiconductor region for suppression dark current so as to touchthe n-type semiconductor region 1037, the planarization film, the colorfilter and the on-chip micro lens are sequentially formed. Accordingly,the intended back-illuminated solid-state imaging device 1101 can beobtained.

[Manufacturing Method of the Solid-State Imaging Device (2)]

FIG. 82 to FIG. 8 8 show another example of a manufacturing method ofthe solid-state imaging device 1101 according to Embodiment 58. First,as shown in FIG. 82 , the p-type semiconductor well region 1027 andthen-type semiconductor region 1037 having low impurity concentrationthereunder are formed in the p-type semiconductor substrate 1011. Thepixel isolation region 1021 made of the p-type semiconductor region fordemarcating the unit pixel is formed at the p-type semiconductor wellregion 1027.

Then, on the surface of the semiconductor substrate 1011, the insulatingfilms, for example, the silicon oxide film 1055 and the silicon nitridefilm 1056 are sequentially formed so that they are on the same level ofthe upper surface of the channel stop region 1047. The resist mask 1051is formed on the silicon nitride film 1056, which has the opening 1052corresponding to the portion in which the vertical transfer gateelectrode is formed. The opening 1052 is formed so as to be positionedat the end of the pixel. The p-type semiconductor region 1025 forsuppressing dark current is formed in the semiconductor substrate 1011by ion implanting the p-type impurity 1053 through the opening 1052 ofthe resist mask 1051. The p-type semiconductor region 1025 is formed soas to reach then-type semiconductor region 1037 having low impurityconcentration or to reach the vicinity thereof.

Next, as shown in FIG. 83 , isotropic etching is performed to theopening 1052 of the resist mask 1051. The sidewall 1056 a made of thesilicon nitride film 1056 is formed by the isotropic etching.

Next, the resist mask 1051 is removed, and the groove portion 1022 isformed by performing selective etching to the p-type semiconductorregion 1025 by anisotropic etching, using the silicon nitride film 1056having the sidewall 1056 a as a mask. The groove portion 1022 is formedby so-called self alignment. The p-type semiconductor region 1025 andthe groove portion 1022 are formed at the end of the pixel.

Then, as shown in FIG. 85 , the selective etching is allowed to proceed,thereby forming the groove portion 1022 so that the p-type semiconductorregion 1025 remains by the necessary width at a side wall in the grooveportion and a bottom surface of the groove portion. After that, thesilicon oxide film 1055 and the silicon nitride film 1056 are removed.

Next, as shown in FIG. 86 , the first photodiode PD1 and the secondphotodiode PD2 are formed by being stacked in the depth direction of thep-type semiconductor well region 1027 demarcated by each pixel isolationregion 1021. The first photodiode PD1 is formed by stacking the n-typesemiconductor region 1028 and the p-type semiconductor region 1029 so asto have the pn junction surface at the deepest portion of thesemiconductor substrate 1011. The second photodiode PD2 is formed bystacking then-type semiconductor region 1030 and the p-typesemiconductor region 1031 so as to form the pn junction surfacesimilarly at the intermediate portion of the semiconductor substrate1011. These n-type semiconductor regions 1028, 1030 and the p-typesemiconductor region 1029, 1031 are alternately formed so as to touch toone another.

Additionally, the overflow path 1035 made of then-type semiconductorregion is formed, which connects the respective n-type semiconductorregions 1028, 1030 of the photodiodes PD1, PD2. Then-type semiconductorregion 1028 positioned at the deepest portion and the overflow path 1035are formed so as to touch then-type semiconductor region 1037 having lowimpurity concentration at the lower layer. The above respective regionsare formed by using ion implantation method.

Next, as shown in FIG. 87 , the channel stop region 1047 made of thep-type semiconductor region having high impurity concentration is formedat a necessary portion on the surface side of the semiconductorsubstrate 1011. The channel stop region 1047 of the p-type semiconductorregion corresponds to the so-called element isolation region.

Furthermore, the gate insulating film 1023 is formed over the innersurface of the groove portion 1022 and the surface of the semiconductorsubstrate 1011. As the gate insulating film 1023, for example, thesilicon oxide (SiO2) film can be used. After that, a gate electrodematerial, for example, a polysilicon film is formed so as to be buriedinto the groove portion 1022 as well as over the surface of thesemiconductor substrate 1011 and is patterned. Accordingly, the columnartransfer gate electrode 1024 part of which protrudes on the surface ofthe substrate as well as buried into the groove portion 1022 is formed.Additionally, the reset gate electrode 1045 and the amplification gateelectrode 1046 made of, for example, the same polysilicon film areformed on the p-type semiconductor well region 1027 on the substratesurface through the gate insulating film 1023.

Next, as shown in FIG. 88 , sidewalls 1048 are respectively formed atthe transfer gate electrode 1024, the reset gate electrode 1045 and theamplification gate electrode 1046. The n-type impurity is ion-implantedby using the respective sidewall 1048 as masks to thereby form thefloating diffusion (FD) 1040, the source/drain regions 1041, 1042 and1043 made of then-type semiconductor region by self alignment.Accordingly, the vertical transfer transistor Tr1, the reset transistorTr2 and the amplification gate transistor Tr3 are formed. The verticaltransfer transistor Tr1 is formed at the end of the pixel.

After the above process or before the above process, the thirdphotodiode PD3 is formed on the surface of the p-type semiconductor wellregion 1027. The photodiode PD3 is formed by stacking then-typesemiconductor region 1032 and the p-type semiconductor region 1033thereon by ion implantation to form the pn junction. Further, thechannel region 1036 made of the n-region or the p-region for suppressiondark current, which reaches the p-type semiconductor region 1025 isformed so as to adjacent to the p-type semiconductor region 1033.

After the above process, the multilevel wiring layer in which plurallayers of wiring are arranged on the surface side of the semiconductorsubstrate 1011 through the interlayer insulating film in the ordinarymanner. Also, on the back of the semiconductor substrate 1011, thep-type semiconductor region for suppression dark current so as to touchthe n-type semiconductor region 1037, the planarization film, the colorfilter and the on-chip micro lens are sequentially formed. Accordingly,the intended back-illuminated solid-state imaging device 1101 can beobtained.

As another method of forming the p-type semiconductor region 1025, it isalso preferable that the groove portion 1022 is formed first, then, thep-type semiconductor region 1025 is formed in the inner-wall surface ofthe groove portion 1022 by inclined-ion implantation.

According to the above manufacturing method of the solid-state imagingdevice, the plural photodiodes PD stacked in the depth direction of thesemiconductor substrate 1011, the overflow path 1035 and the p-typesemiconductor region 1025 for suppressing dark current, which covers thetransfer gate portion of the vertical transfer transistor Tr can beformed. That is, in respective examples, the solid-state imaging device1011 in which the saturation charge amount (Qs) is increased andoccurrence of white defects is suppressed by suppressing occurrence ofdark current can be manufactured.

Also in the manufacturing methods according to the embodiment, thesource/drain regions (n+ regions) 1041, 1042 and 1043 and the FD areformed by ion-implanting then-type impurity by self alignment, using thesidewalls 1048 at the sidewalls of the gate electrodes 1024, 1045 and1056 as masks. Accordingly, the floating diffusion (FD) 1040 made of n+region does not get into the portion under the transfer gate portion,which suppresses dark current due to GIDL. Since the floating diffusion(FD) 1040 is formed by using the sidewalls 1048 as masks, the floatingdiffusion (FD) 1040 can be formed apart from the vertical transfer gateportion constantly by a fixed distance even when mask misalignmenthappens at the time of forming the vertical transfer transistor Tr1.

After the p-type semiconductor region 1025 around the vertical transfergate portion is formed by ion implantation through the resist mask 1051,the sidewall 1056 a is formed with respect to the mask opening 1052 byisotropic etching, and part of the p-type semiconductor region 1025 isselectively etched by self alignment. Accordingly, the p-typesemiconductor region 1025 corresponding to the wall surface of thegroove portion 1022 having high aspect ratio can be formed with highaccuracy.

The p-type semiconductor region 1025 is formed first, and the grooveportion 1022 is formed by selectively etching the p-type semiconductorregion 1025 after that, therefore, the p-type semiconductor region 1025is formed at the bottom portion of the groove portion 1022. Therefore,it is possible to suppress dark current caused by defects occurring atthe bottom portion of the vertical transfer transistor Tr1 as well assuppress occurrence of white defects.

Embodiment 59 [Configuration of a Solid-State Imaging Device]

FIG. 89 shows a solid-state imaging device according to Embodiment 59 ofthe invention. A solid-state imaging device 1102 according to theembodiment of the invention is configured by omitting then-typesemiconductor region 1032 and the p-type semiconductor region 1033 whichmake up the third photodiode PD3 on the surface side of the substrateand the channel region 1036 in the solid-state imaging device 1101 ofEmbodiment 58. In the configuration, a p-type semiconductor well regionunder the transfer gate portion between the second photodiode PD2 andthe substrate surface functions as the channel region 1036. Since otherconfigurations are the same as Embodiment 58, the same symbols are givento portions corresponding to FIG. 73 , and the repeated explanation isomitted.

The operation of the solid-state imaging device 1102 according to thepresent embodiment is the same as the operation explained in the aboveEmbodiment 58.

In the solid-state imaging device 1102 according to Embodiment 59, theconfiguration in which the third photodiode PD3 on the substrate surfaceside is omitted is applied, therefore, the device is suitable for a casein which the pixel size is further reduced. That is, even when the pixelsize is reduced to a degree that it is difficult to form the thirdphotodiode PD3 on the substrate surface, the first and secondphotodiodes PD1, PD2 are formed in the depth direction, therefore, it ispossible to secure the saturation charge amount (Qs) and to suppressdark current. Additionally, the same advantages as the ones explained inEmbodiment 58 can be obtained.

Embodiment 60 [Configuration of a Solid-State Imaging Device]

FIG. 90 shows a solid-state imaging device according to Embodiment 60 ofthe invention. A solid-state imaging device 1103 according to theembodiment is configured by including two photodiodes, namely, the firstphotodiode PD1 buried in to the substrate and the third photodiode PD3on the substrate surface side as plural photodiodes. That is, theconfiguration in which the second photodiode PD2 is omitted inEmbodiment 58 is applied. Also in the example, the overflow path 1035made of the n-type semiconductor region which connects then-typesemiconductor region 1028 and 1032 to be charge accumulation regions ofthe first photodiode PD1 and the third photodiode PD3 mutually isformed. The overflow path 1035 doubles as the channel region 1034 of thetransfer gate portion. Since other configurations are the same asEmbodiment 58, the same symbols are given to portions corresponding toFIG. 73 in FIG. 90 , and the repeated explanation is omitted.

According to the solid-state imaging device 1103 of Embodiment 6 0, theconfiguration in which two photodiodes which are the first photodiodePD1 buried in the substrate and the third photodiode PD3 on thesubstrate surface are included is applied. According to theconfiguration, it is possible to secure the saturation charge amount(Qs) and to suppress dark current. Since the two-layer structure of thephotodiodes PD1, PD3 is applied, the depth of the vertical transfertransistor Tr1 can be made shallow. According to the configuration,transfer efficiency can be improved by shortening the transfer path aswell as occurrence of white defects can be suppressed by reducing theinterface area. Additionally, the same advantages as those explained inEmbodiment 58 can be obtained.

Embodiment 61 [Configuration of a Solid-State Imaging Device]

A solid-state imaging device according to Embodiment 61 is configured byforming only one layer of buried photodiode PD as the photodiode, thoughnot shown. That is, the solid-state imaging device according to theembodiment has a configuration in which the second photodiode PD2, thethird photodiode PD3 and the channel region 1036 are omitted from theconfiguration of the solid-state imaging device 1011 of Embodiment 58.The p-type semiconductor well region 1027 under the transfer gateportion between the first photodiode PD1 and the substrate surfacefunctions as the channel region. Other configurations are the same asFIG. 73 .

Also in the solid-state imaging device according to Embodiment 61, thetransfer transistor Tr1 is formed at the end of the pixel, therefore,the area of the photodiode PD can be widely secured, which increases thesaturation charge amount (Qs). Additionally, since the p-typesemiconductor region 1025 is formed around the vertical transfer gateportion, it is possible to suppress occurrence of dark current andoccurrence of white defects.

In the solid-state imaging device according to Embodiment 61, it is alsopreferable to apply a configuration in which an n-type semiconductorregion is formed around the transfer gate portion of the verticaltransfer transistor instead of the p-type semiconductor region. In thecase of the configuration, charge transfer efficiency can be furtherimproved.

Embodiment 62 [Configuration of a Solid-State Imaging Device]

FIG. 91 and FIG. 92 show a solid-state imaging device according toEmbodiment 62 of the invention. A solid-state imaging device 1105according to the embodiment is configured by arranging a pixelconfiguration 1061 (hereinafter, referred to as a joint pixel)two-dimensionally, in which plural photodiodes, namely, two photodiodesin the example share pixel transistors other than the transfertransistors.

FIG. 93 shows a circuit configuration of the joint pixel 1061 which havetwo pixels according to the embodiment. The two photodiodes PD(A), PD(B)are respectively connected to sources of corresponding two transfertransistor Tr1A, Tr1B. Drains of the transfer transistor Tr1A, Tr1B areconnected to a source of one reset transistor Tr2. The floatingdiffusion (FD) 1040 shared between the respective transfer transistorsTr1A, Tr1B and the reset transistor Tr2 is connected to a gate of oneamplification transistor Tr3. A drain of the reset transistor Tr2 and adrain of the amplification transistor Tr3 are connected to theabove-described selection power supply SELVDD and a source of theamplification transistor Tr3 is connected to the vertical signal line1009.

FIG. 91 shows a schematic planar configuration of the joint pixel 1061.In the joint pixel 1061, the shared floating diffusion (FD) 1040 isarranged at the center, and two photodiodes PD (A), PD (B) are arrangedsandwiching the floating diffusion (FD) 1040. The respective transfertransistors Tr1A, Tr1B are arranged facing to each other at ends ofrespective pixels, namely, positions corresponding to corner portions ofthe photodiodes PD (A), PD (B). Respective transfer gate electrodes1024A, 1024B are formed between the photodiodes PD(A), PD(B) and thefloating diffusion (FD) 1040. As shown in FIG. 92 , the reset transistorTr2 and the amplification transistor Tr3 are formed on the substratesurface side on the photodiode.

The solid-state imaging device 1105 according to the embodiment forms asymmetrical configuration in which two sets of the vertical transistorand the photodiode sandwich the floating diffusion (FD) 1040 at thecenter. That is, a configuration of the vertical transfer transistorTr1A and the photodiode PD(A) is arranged at one side and aconfiguration of the vertical transfer transistor Tr1B and thephotodiode PD (B) is arranged at the other side. The reset transistorTr2 and the amplification transistor Tr3 are formed at the p-typesemiconductor well region 1027.

The configuration of the vertical transfer transistors Tr1A, Tr1B, andthe configuration of the photodiodes PD(A), PD(B) including the first tothird photodiodes PD1 to PD3 and the overflow path 1035 are the same asthose shown in FIG. 73 .

According to the solid-state imaging device 1105 which joins pixels, thesaturation charge amount (Qs) of the unit pixel is increased as well asthe area of the photodiode is widened due to the joint pixel, whichfurther increases the saturation charge amount (Qs) Additionally, thep-type semiconductor region 1025 is formed around the vertical transfergate portion, therefore, dark current due to detects existing by thevertical transfer gate portion can be suppressed as well as occurrenceof white defects can be suppressed. Additionally, the same advantages asthose explained in Embodiment 58 can be obtained.

Embodiment 63 [Configuration of a Solid-State Imaging Device]

FIG. 94 shows a solid-state imaging device according to Embodiment 63 ofthe invention. A solid-state imaging device 1106 according to theembodiment has a configuration in which plural photodiodes PD (PD1 toPD3) are formed in the depth direction of the semiconductor substrate1011 and the transfer transistor Tr1 is formed in a vertical type, thechannel direction of which is vertical with respect to the semiconductorsubstrate. Additionally, the overflow path 1035 made of then-typesemiconductor region which connects then-type semiconductor regions1028, 1030 and 1032 to be charge accumulation regions of the respectivephotodiodes PD1 to PD3 to one another is formed. In the example, theoverflow path 1035 is formed so as to double as the channel region 1034.

Further in the embodiment, an ion implantation region for adjusting agate interface is formed around the transfer gate portion, that is, atthe gate interface between the gate insulating film 1023 formed at aninner wall surface of the groove portion 1022 and the semiconductorsubstrate 1011. As the ion implantation region, an n-type semiconductorregion 1058 is formed in the embodiment. Then-type semiconductor region1058 is formed by an ion implantation process which is different fromthe formation process of the overflow path 1035 and then-typesemiconductor regions 1028, 1030 and 1032 of the photodiodes PD, whichcontributes to the improvement of charge transfer efficiency. The bottomportion of the groove portion 1022 is made of the p-type semiconductorregion, not the n-type semiconductor region 1058. The n-typesemiconductor region 1058 can be formed by forming the groove portion1022 after ion-implanting an n-type impurity into the semiconductorsubstrate by applying the same process as the formation process of thep-type semiconductor region 1025 for suppressing dark current inEmbodiment 58 which have been described above. Or, then-typesemiconductor region 1058 can be formed by a process in which inclinedion implantation is performed into the side wall of the groove afterforming the groove. Since other configurations are the same asEmbodiment 58, the same symbols are given to portions corresponding toFIG. 73 , and repeated explanation is omitted.

In the solid-state imaging device 1106 according to Embodiment 63,plural photodiodes PD (PD1 to PD3) are stacked in the depth direction ofthe semiconductor substrate 1011 and then-type semiconductor regions1028 to 1032 of the respective photodiodes PD1 to PD3 are connectedthrough the overflow path 1035. At the time of accumulating charges,when any of photodiodes PD reaches the saturation charge amount, chargesexceeding the saturation charge amount are accumulated in anotherphotodiode PD which has not been saturated through the overflow path1035. According to the configuration, effective saturation charge amount(Qs) per a unit pixel is increased, dynamic range can increased and thecontrast can be improved even when the pixel size is reduced.

Furthermore, then-type ion implantation region 1058 is formed at thegate interface around the vertical transfer gate portion, therefore,charge transfer efficiency can be further improved.

The transfer transistor Tr1 is formed as the vertical transistor as wellas the transfer transistor Tr1 is formed at the end of the pixel 1002,thereby securing the area of the photodiodes PD (PD1 to PD3) widely andincreasing the saturation charge amount (Qs) per a unit pixel.

In addition to the above, plural photodiodes PD are stacked and theoverflow path 1035 is formed between the p-type semiconductor regions1029, 1031 which make up the photodiodes PD and the transfer gateportion in the same manner as explained in Embodiment 58. That is, thep-type semiconductor regions 1029, 1031 of the photodiodes PD are formedapart from the transfer gate portion by a necessary distance. The signalcharges accumulated in the photodiodes PD can be completely transferredin the vertical direction through the channel region 1034 which is usedas the overflow path 1035 by adjusting the offset amount. Additionally,the saturation charge amount (Qs) to be accumulated in the photodiodesPD can be secured. As a result, the configuration which realizes suchcomplete transfer as well as which secures the saturation charge amount(Qs) can be designed.

The configuration in which then-type semiconductor region 1058 isprovided around the vertical transfer gate portion in Embodiment 63 canbe applied also to the solid-state imaging devices having photodiodeconfigurations shown in Embodiments 59, 60 and 62 described above.

In the above embodiments, the solid-state imaging devices usingelectrons as signal charges have been explained. The invention can bealso applied to a solid-state imaging device using holes as signalcharges. In this case, concerning the conductive type of respectivesemiconductor regions, the first conductive type will be the n-type andthe second conductive type will be the p-type, which is converse to theabove embodiments.

Embodiment of an Electronic Apparatus [Configuration of an ElectronicApparatus]

The solid-state imaging device according to any of the embodiments ofthe invention can be applied to electronic apparatuses such as camerasystems including a digital camera, a video camera and the likeproviding with the solid-state imaging device, a cellular phone havingimaging functions and other apparatuses having imaging functions.

FIG. 71 shows Embodiment 62 in which the invention is applied to acamera as an example of electronic apparatuses. A camera according tothe embodiment is, for example, a video camera which can image stillpictures or moving pictures. A camera according to the embodimentincludes a solid-state imaging device 1, an optical lens (opticalsystem) 110, a shutter device 111, a drive circuit 112 and a signalprocessing circuit 113.

As the solid-state imaging device 1, any one of the solid-state imagingdevices of Embodiment 58 to Embodiment 63 described above is applied.Preferably, any of the solid-state imaging devices in Embodiments 58,59, 60, 62 and 63 is applied. The optical lens 110 images image light(incident light) from a subject on an imaging surface of the solid-stateimaging device 1. Accordingly, signal charges are accumulated in thesolid-state imaging device 1 for a fixed period of time. The opticallens 110 may be an optical system including plural optical lenses. Theshutter device 112 controls an illumination period and a shieldingperiod of light with respect to the solid-state imaging device 1. Thedrive circuit 112 supplies control signals controlling transferoperation and shutter operation of the solid-state imaging device 1. Thesignal transfer of the solid-state imaging device 1 is performed by adrive signal (timing signal) supplied from the drive circuit 112. Thesignal processing circuit 113 performs various signal processing. Videosignal which have received signal processing are stored in a recordingmedium such as a memory or outputted to a monitor.

In the camera according to the embodiment, increase of the saturationcharge amount (Qs), and improvement of the dynamic range can be realizedoccurrence of dark current and thereby occurrence of white defects canbe suppressed, as a result, the pixel size can be reduced. Therefore,the electronic apparatus can be small in size as well as the electronicapparatus having high image quality can be obtained.

[Whole Configuration of a Solid-State Imaging Device]

The whole configuration of a CMOS solid-state imaging device, namely, aCMOS image sensor to which Embodiment 64 and Embodiment 65 which will beexplained below are applied is explained with reference to FIG. 5 .

A solid-state imaging device 1 shown in FIG. 5 includes an imaging area3 having plural pixels 2 arranged on a semiconductor substrate 2030 madeof Si, a vertical drive circuit 4, column signal processing circuits 5,a horizontal drive circuit 6, an output circuit 7, a control circuit 8and the like as peripheral circuits of the imaging area 3.

The pixel 2 includes a photodiode as a photoelectric conversion elementand plural MOS transistors, and plural pixels 2 are arranged regularlyon the semiconductor substrate 2030 in a two-dimensional array state.

The imaging area 3 includes the plural pixels 2 regularly arranged inthe two-dimensional array state. The imaging area 3 includes aneffective pixel area in which light is actually received and signalcharges generated by photoelectric conversion are accumulated and ablack reference pixel area which is formed around the effective pixelarea for outputting optical black to be a reference of a black level.

The control circuit 8 generates a clock signal, a control signal and thelike to be references of operations of the vertical drive circuit 4, thecolumn signal processing circuits 5, the horizontal drive circuit 6 andthe like based on a vertical synchronization signal, a horizontalsynchronization signal and a master clock. The clock signal, the controlsignal and the like generated in the control circuit 8 are inputted tothe vertical drive circuit 4, the column signal processing circuits 5and the horizontal drive circuit 6 and the like.

The vertical drive circuit 4 includes, for example, a shift register,selectively scanning respective pixels 2 in the imaging area 3 by therow sequentially in the vertical direction. Then, pixel signals based onsignal charges generated in accordance with the light receiving amountin photodiodes of respective pixels 2 are supplied to the column signalprocessing circuits 5 through vertical signal lines.

The column signal processing circuits 5 are arranged, for example, atrespective columns of pixels 2, performing signal processing such asnoise removal or signal amplification to signals outputted from pixels 2of one row by the pixel column using a signal from a black referencepixel area (formed around the effective pixel area though not shown).Horizontal selection switches (not shown) are provided at output stagesof the column signal processing circuits 5 between the circuits 5 and ahorizontal signal line 2031.

The horizontal drive circuit 6 includes, for example, a shift register,sequentially selecting respective column signal processing circuits 5 bysequentially outputting horizontal scanning pulses to thereby allowrespective column signal processing circuits 5 to output pixel signalsto the horizontal signal lines 2031.

The output circuit 7 performs signal processing to signals sequentiallysupplied from respective column signal processing circuits 5 through thehorizontal signal line 2031 and output the signals.

The solid-state imaging devices explained as follows are included in thesolid-state imaging device 1 shown in FIG. 5 , and they particularlyshow cross-sectional configurations in effective imaging areas.

Embodiment 64 [Configuration of a Solid-State Imaging Device]

FIG. 95 shows a schematic cross-sectional configuration of a solid-stateimaging device according to Embodiment 64 of the invention. FIG. 95shows a cross-sectional configuration of one pixel.

[Configuration]

A solid-state imaging device of the present embodiment includes plurallayers of photodiodes formed by being stacked with junction surfacesbetween a p-type impurity region as a first conductive type and ann-type impurity region as a second conductive type in different depthsin a semiconductor substrate 2010, a vertical transistor Tr and anoverflow path 2021.

The configuration of the solid-state imaging device of the embodimentwill be described in detail below.

The semiconductor substrate 2010 is made of a semiconductor materialincluding a p-type impurity region (p).

The photodiode PD includes an n-type low concentration impurity region(hereinafter, referred to as an n-region) 2011 formed in thesemiconductor substrate 2010, a first n-type impurity region 2012, afirst p-type high concentration impurity region 2013, a second n-typeimpurity region 2014 and a second p-type high concentration impurityregion 2015 which are sequentially stacked on the surface side withrespect to then-region 2011. In the photodiode PD, a first photodiodePD1 is formed by including a junction surface between the first n-typeimpurity region 2012 and the first p-type high concentration impurityregion 2013. Also, a second photodiode PD2 is formed by including ajunction surface between the second n-type impurity region 2014 and thesecond p-type high concentration impurity region 2015. Accordingly, inthe embodiment, the photodiode PD including the first photodiode PD1 andthe second photodiode PD2 is formed in the depth direction of thesemiconductor substrate 2010. FIG. 96A, FIG. 96B, FIG. 96C and FIG. 96Drespectively show cross-sectional views taken along A-A′ line, B-B′line, C-C′ line and D-D′ line of FIG. 95 .

The vertical transistor includes a reading gate electrode 2018 formedthrough a gate insulating film 2017, a floating diffusion region 2016and a transfer channel 2020.

The reading gate electrode 2018 is formed in a columnar shape in thedepth reaching the first p-type high concentration impurity region 2013included in the first photodiode PD1 from the surface of thesemiconductor substrate 2010. That is, the reading gate electrode 2018is formed in a vertical shape along the second photodiode PD2 and thefirst photodiode PD1 formed from the surface of the semiconductorsubstrate 2010 in the depth direction. As can be seen from planarconfigurations of respective layers shown in FIG. 96A to FIG. 96D, thereading gate electrode 2018 is formed at the central portion of thefirst photodiode PD1 and the second photodiode PD2 included in the pixelin the embodiment. The gate insulating film 2017 is formed between thereading gate electrode 2018 and the semiconductor substrate 2010 as wellas formed extending on the surface of the semiconductor substrate 2010.

The reading gate electrode 2018 formed in the columnar shape is formedby polysilicon buried into a groove portion formed in a columnar shapein the depth reaching the first p-type high concentration impurityregion 2013 from the surface side of the semiconductor substrate 2010through the gate insulating film 2017. As the gate insulating film 2017,a silicon oxide film and the like can be used.

The floating diffusion region 2016 is made of an n-type highconcentration impurity region (n+), which is formed at the surface ofthe semiconductor substrate 2010.

The transfer channel 2020 is made of an n-type low concentrationimpurity region (n−), which is formed at a portion adjacent to thereading gate electrode 2018 formed in the semiconductor substrate 2010through the gate insulating film 2017. The transfer channel 2020 isformed so as to touch the floating diffusion region 2016 and the firstand second n-type impurity regions 2012, 2014 included in the first andsecond photodiodes PD1, PD2. The second n-type impurity region 2014 isformed so as to be closer to the reading gate electrode 2018 in theregion of the transfer channel 2020. If the second n-type impurityregion 2014 completely touches the reading gate electrode 2018 throughthe gate insulating film 2017, junction capacitance is increased andefficiency is reduced when signal charges are transferred through thetransfer channel. However, the second n-type impurity region 2014 isformed close to the reading gate electrode 2018 without touching theelectrode, thereby further increasing the saturation charge amount ofthe second photodiode PD2.

In the vertical transistor Tr, when positive voltage is applied to thereading gate electrode 2018, the potential of the transfer channel 2020is changed. Accordingly, signal charges accumulated in the first andsecond photodiodes PD1, PD2 included in the photodiode PD aretransferred through the transfer channel 2020 and read to the floatingdiffusion region 2016.

FIG. 97 shows the impurity concentration of the first photodiode PD1,the second photodiode PD2 and the floating diffusion region 2016 in thesolid-state imaging device of the embodiment. The horizontal axis inFIG. 97 indicates the depth from the surface of the semiconductorsubstrate 2010 and the vertical axis indicates the impurityconcentration.

As shown in FIG. 97 , the impurity concentration of the first n-typeimpurity region (n) 2012 included in the photodiode PD1 is 1017/cm³. Theimpurity concentration of the first p-type high concentration impurityregion (p+) 2013 included in the photodiode PD1 is 1017 to 1018/cm³. Theimpurity concentration of the second n-type impurity region (n) 2014included in the second photodiode PD2 is 1017/cm³. The impurityconcentration of the second p-type high concentration impurity region(p+) 2015 included in the second photodiode PD2 is 1018 to 1019/cm³. Theimpurity concentration of then-type high concentration impurity region(n+) included in the floating diffusion region 2016 is 1020/cm³ or more.The impurity concentration shown in FIG. 97 is displayed in logarithms,therefore, the first n-type impurity region 2012 and the second n-typeimpurity region 2014 are in the same order, however, the impurityconcentration of the second n-type impurity region 2014 is approximatelytwice higher in fact.

Also according to the impurity concentration distribution shown in FIG.97 , the second n-type impurity region 2014 is totally depleted. Thesecond n-type impurity region 2014 has the impurity concentrationdistribution which can allow the region to be totally depleted, therebyallowing the second n-type impurity region 2014 to be totally depletedagain when signal charges accumulated in the second n-type impurityregion 2014 are transferred, as a result, all signal charges can betransferred. The remnant of signal charges is not mixed into signalcharges to be accumulated next and residual images can be eliminated bytotally depleting the second n-type impurity region 2014 as describedabove.

According to the concentration distribution shown in FIG. 97 , theefficiency of reading signal charges accumulated in the first and secondphotodiodes PD1, PD2 formed in the depth direction of the semiconductorsubstrate 2010 to the floating diffusion region 2016 can be improved.

When plural layers of p-type impurity regions and n-type impurityregions are formed by ion implantation, the impurity region at a deepposition in the semiconductor substrate 2010 tends to spread and havelow concentration. Therefore, the manufacture with the impurityconcentration distribution like the embodiment is easy.

Furthermore, when the second n-type impurity region 2014 included in thesecond photodiode PD2 is formed so as to be close to the reading gateelectrode 2018, the impurity concentration of a region close to thereading gate electrode 2018 becomes high. Accordingly, it is possible toaccumulate electrons at the region close to the reading gate electrode2018 and the transfer becomes easy.

In the embodiment, the transfer channel 2020 doubles as the overflowpath 2021. The overflow path 2021 is used as a path for transferringsignal charges exceeding the saturation charge amount of one photodiodeto the other photodiode or to the floating diffusion region 2016 at thetime of accumulating signal charges in the photodiode PD. That is, thefirst and second pohotodiods PD1, PD2 and the floating diffusion region2016 are electrically connected by the overflow path 2021 at the time ofaccumulating signal charges to the photodiode PD.

In the embodiment, when one photodiode is regarded as the firstphotodiode PD1, the other photodiode can be regarded as the secondphotodiode PD2.

A source/drain region of another MOS transistor included in one pixel isformed by an n-type high concentration impurity region (n+) 2019 on thesurface of the semiconductor substrate 2010. As the MOS transistor, forexample, a selection transistor, a reset transistor, an amplificationtransistor or the like can be cited. In FIG. 95 , only one source/drainregion included in the MOS transistor formed in one pixel is typicallyshown.

The solid-state imaging device of the embodiment can be used as aback-illuminated solid-state imaging device and as a front-illuminatedsolid-state imaging device. FIG. 98 shows a schematic cross-sectionalconfiguration when it is used as the back-illuminated solid-stateimaging device.

As shown in FIG. 98 , desired wiring layers are formed on the surfaceside of the semiconductor substrate 2010 through an interlayerinsulating film 2029. In an example shown in FIG. 98 , three wiringlayers 1M to 3M are formed. The desired wirings are connected to oneanother through a contact portion.

On the back side of the semiconductor substrate 2010, a p-type highconcentration impurity region 2025 is formed so as to touch then-region2011 included in the photodiode PD. Furthermore, on the back side of thesemiconductor substrate 2010, for example, a passivation film 2026 madeof SiN, a color filter 2027 and an on-chip lens 2028 are sequentiallyformed.

[Drive Method]

Hereinafter, a drive method will be explained, citing a case in whichthe solid-state imaging device of the embodiment is the back-illuminatedtype as an example.

First, a light Lis illuminated from the back side of the solid-stateimaging device shown in FIG. 98 , that is, from the on-chip lens 2028side. Then, the light condensed by the on-chip lens 2028 is incident onthe photodiode PD through the color filter 2027.

The light incident on the photodiode PD is photoelectrically convertedin then-region 2011, the first photodiode PD1 and the second photodiodePD2 to generate signal charges. The generated signal charges areaccumulated in the first n-type impurity region 2012 included in thefirst photodiode PD1 or in the second n-type impurity region 2014included in the second photodiode PD2. The solid-state imaging device ofthe embodiment is configured to have a configuration in which a bottomportion of the reading gate electrode 2018 touches the first p-type highconcentration impurity region 2013 through the gate insulating film2017, and negative voltage is applied to the reading gate electrode 2018at the accumulating signal charges. According to this, holes are pinnedat the bottom portion of the reading gate electrode 2018 through thegate insulating film 201 7. The hole pinning in which holes are pinnedoccurs as described above, thereby shutting dark current noise enteringfrom the bottom portion of the reading gate electrode 2018 and the gateinsulating film 2017 into the first p-type high concentration impurityregion 2013. Accordingly, it is possible to reduce dark current reachingthe first photodiode PD1 and the second photodiode PD2.

FIG. 99A to FIG. 99E show potential distribution views taken along P-P′line in FIG. 95 , showing states of signal charges accumulated inpotential wells made of the first n-type impurity region 2012 and thesecond n-type impurity region 2014 at the time of accumulating signalcharges. In the solid-state imaging device of the embodiment, as shownin FIG. 99A to FIG. 99E, the first photodiode PD1 formed on a deeperside of the semiconductor substrate 2010 has higher potential than thesecond photodiode PD2. The potential well formed in the first photodiodePD1 is shallower than the potential well formed in the second photodiodePD2.

The signal charges generated by photoelectric conversion in thephotodiode PD are accumulated in the potential well made of the firstn-type impurity region 2012 at first as shown in FIG. 99A. Then, stronglight is radiated, signal charges to be generated are increased andexceed the saturation charge amount of the first n-type impurity region2012. In such a case, signal charges “e” overflowed the potential wellmade of the first n-type impurity region 2012 are transferred to thepotential well made of the second n-type impurity region 2014 as shownin FIG. 99B through the overflow path 2021. At this time, the potentialsare as shown in FIG. 99A to FIG. 99E, therefore, the signal charges “e”exceeding the saturation charge amount of the first n-type impurityregion 2012 are completely transferred to the second n-type impurityregion 2014.

Then, as shown in FIG. 99C, the signal charges “e” further exceeding thesaturation charge amount of the potential well made of the second n-typeimpurity region 2014 are transferred to the floating diffusion region2016. Then, as shown in FIG. 99D, the signal charges “e” transferred tothe floating diffusion region 2016 are reset by reset voltage applied tothe floating diffusion region 2016. That is, in the embodiment, thesignal charges “e” exceeding the saturation charge amounts of the firstand second photodiodes PD1, PD2 are transferred to the floatingdiffusion region 2016 and are reset there.

After signal charges are accumulated, positive voltage is applied to thereading gate electrode 2018. Then, the potential of the transfer channel2020 which doubles as the overflow path 2021 becomes deep as shown inFIG. 99E. Accordingly, signal charges accumulated n the first n-typeimpurity region 2012 and the second n-type impurity region 2014 aretransferred through the transfer channel 2020 and read to the floatingdiffusion region 2016 at the same time.

The drive method after that is the same as drive of a normal solid-stateimaging device. That is, signal charges are transferred to the floatingdiffusion region 2016 and voltage change in the floating diffusionregion 2016 is amplified by a not-shown amplification transistor to beoutputted.

In the solid-state imaging device of the embodiment, two photodiodesincluding the first and second photodiodes PD1, PD2 are formed in thedepth direction of the semiconductor substrate 2010. The overflow path2021 through which signal charges can be transferred at the time ofaccumulating signals between the first photodiode PD1, the secondphotodiode PD2 and the floating diffusion region 2016. Accordingly,signal charges exceeded the saturation charge amount of one photodiodeand overflowed the photodiode are accumulated in another photodiode.According to the configuration, the saturation charge amount of thewhole photodiode PD is increased. As a result, the sensitivity of thesolid-state imaging device can be improved.

When signal charges overflow further another photodiode, the charges aretransferred to the floating diffusion region 2016 and reset byapplication of reset voltage.

In the solid-state imaging device of the embodiment, the verticaltransistor Tr including the reading gate electrode 2018 which is buriedin the depth direction of the photodiode PD is formed. Accordingly,signal charges accumulated in the first and second photodiodes PD1, PD2formed in the depth direction of the semiconductor substrate 2010 can becompletely transferred to the floating diffusion region 2016.

Though the solid-state imaging device of the embodiment is configured bytwo photodiodes including the first photodiode PD1 and the secondphotodiode PD2, it is possible that two or more, a plural desired numberof photodiodes can be stacked. The plural number of photodiodes arestacked, thereby increasing the saturation charge amount (Qs) as well asimproving sensitivity even when the pixel size is reduced. That is, thepixel size reduction can be easily realized while increasing thesaturation charge amount and improving sensitivity, therefore, theconfiguration of the embodiment is advantageous for reducing the pixelsize. Additionally, since the saturation charge amount can be increasedand the dynamic range can be increased, improvement of the contrast isrealized.

Furthermore, when the back-illuminated solid-state imaging device isapplied, the side in which plural pixel transistors included in thesolid-state imaging device are formed is opposite to the side on whichlight is incident. Since the area for openings is necessary on thesurface of the semiconductor substrate 2010 in the case of thefront-illuminated type, positions of forming pixel transistors formed onthe semiconductor 2010 are limited. However, in the case of theback-illuminated solid-state imaging device, the pixel transistors,wiring and the like are not arranged on the light incident side,therefore, the area of the photodiode PD can be expanded and thearrangement is not affected by design rules at the reduction of thepixel size. Additionally, since the photodiode on the surface side canbe formed in a deep position of the semiconductor substrate 2010, it ispossible to reduce effects of the defect level on the surface of thesemiconductor substrate 2010.

In the solid-state imaging device of the embodiment, bottom portions ofthe reading gate electrode 2018 and the gate insulating film 2017 areformed in the depth reaching the first p-type high concentrationimpurity region. However, the reading gate electrode 2018 may be formedto the depth in which signal charges accumulated in the first photodiodePD1 can be read. For example, it is also preferable that the readinggate electrode 2018 is formed so as to reach the junction surfacebetween the first n-type impurity region 2012 and the first p-type highconcentration impurity region 2013. However, when the reading gateelectrode 2018 touches then-type impurity region, coupling capacitanceis increased at the time of reading signal charges, therefore, readingefficiency is reduced. In the embodiment, the bottom portions of thereading gate electrode 2018 and the gate insulating film 2017 do nottouch then-type impurity region, thereby improving reading efficiency.

In the embodiment, it is also preferable that the second n-type impurityregion 2014 in the photodiodes PD formed in the depth direction of thesemiconductor substrate 2010 is formed apart from the reading gateelectrode 2018 by the same distance as the first and second p-type highconcentration impurity regions 2013, 2015 as shown in FIG. 100 .

Embodiment 65 [Configuration of a Solid-State Imaging Device]

FIG. 101 shows a schematic cross-sectional configuration of asolid-state imaging device according to Embodiment 65. In FIG. 101 ,same symbols are given to portions corresponding to FIG. 95 and therepeated explanation is omitted.

In the solid-state imaging device of the embodiment, an overflow path2022 is made of an n-type impurity region formed at parts of the firstp-type high concentration impurity region 2013 and the second p-typehigh concentration impurity region 2015. The overflow path 2022 isformed by ion-implanting the n-type impurity into parts of the first andsecond p-type high concentration impurity region 2013, 2015. Then-typeimpurity region formed in the first p-type high concentration impurityregion 2013 electrically connects the first n-type impurity region 2012to the second n-type impurity region 2014. Also, then-type impurityregion formed in the second p-type high concentration impurity region2015 electrically connects the second n-type impurity region 2014 to thefloating diffusion region 2016.

In the solid-state imaging device of the embodiment, at the time ofaccumulating signal charges, signal charges overflowed a potential wellmade of the first n-type impurity region 2012 are accumulated in thesecond n-type impurity region 2014 through the overflow path 2022 formedin the first p-type high concentration impurity region 2013. Then,signal charges further overflowed a potential well made of the secondn-type impurity region 2014 are transferred to the floating diffusionregion 2016 through the overflow path 2022 formed in the second p-typehigh concentration impurity region 2015 and are reset there.

Then, after accumulating signal charges, positive voltage is applied tothe reading gate electrode 2018. As a result, the potential of thetransfer channel 2020 which doubles as the overflow path 2021 becomesdeep in the same manner as Embodiment 64. According to this, signalcharges accumulated in the first n-type impurity region 2012 and thesecond n-type impurity region 2014 are transferred through the transferchannel 2020 and read to the floating diffusion region 2016 at the sametime.

Also in the solid-state imaging device of the embodiment, the sameadvantages as Embodiment 64 can be obtained. In the embodiment, theoverflow path 2022 is made of then-type impurity region, however, it isalso preferable that the overflow path 2022 is made of a p-type lowimpurity region if it is a region having the potential which cantransfer overflowed signal charges.

The configuration of the overflow path in the invention is not limitedto the configurations of the overflow path in Embodiment 64 andEmbodiment 65 described above. It is possible to apply a configurationin which signal charges exceeded the saturation charge amounts ofrespective photodiodes and overflowed the photodiodes can be transferredamong plural photodiodes at the time of accumulating signal charges.

In the above embodiments of the solid-state imaging device, the case inwhich the invention is applied to the image sensor in which unit pixelsdetecting signal charges corresponding to the light amount of visiblelight as physical quantity are arranged in a matrix state has beenexplained as an example. However, the invention is not limited to theapplication to the image sensor, and it is possible to be applied to theentire column-type solid-state imaging device in which column circuitsare arranged at respective pixel columns in the pixel array area.

Additionally, the application of the invention is not limited to thesolid-state imaging device in which distribution of the incident lightamount of visible light is detected and imaged as an image, and it ispossible that the invention is applied to a solid-state imaging devicein which distribution of the incident light amount of infrared rays,X-rays or particles is imaged as an image. In a broad sense, theinvention can be also applied to all solid-state imaging devices(physical quantity distribution detection devices) such as a fingerprintdetection sensor which detects distribution of other physical quantitiessuch as pressure or capacitance.

Moreover, the invention is not limited to the solid-state imaging devicewhich reads pixel signals from respective unit pixels by scanningrespective unit pixels in the pixel array portion row by row. Forexample, the invention can be also applied to an X-Y address typesolid-state imaging device which selects an arbitrary pixel by the pixeland reads signals by the pixel from the selected pixel.

The solid-state imaging device may be formed as a one-chip or may beformed as a module state having imaging functions, in which an imagingunit, a signal processing unit or an optical system are integrallypackaged.

The invention is not limited to the solid-state imaging device but canbe applied to an imaging apparatus. Here, the imaging apparatus means anelectronic apparatus having imaging functions, for example, camerasystems such as a digital still camera and a digital video camera, acellular phone and the like. There is a case in which the module stateto be mounted on the electronic apparatus, namely, a camera module isdefined as an imaging apparatus.

Embodiment 66 [Electronic Apparatus]

Hereinafter, an embodiment in which the solid-state imaging deviceaccording to the above embodiments of the invention is used in anelectronic apparatus is shown. In the following description, an examplein which a solid-state imaging device which has been explained inEmbodiments 64 or Embodiment 65 is used for a camera will be explained.

FIG. 71 shows a schematic planar configuration according to Embodiment66 of the invention. The camera according to the embodiment is, forexample, a video camera which can image still pictures or movingpictures. A camera according to the embodiment includes the solid-stateimaging device 1, an optical lens 110, a shutter device 111, a drivecircuit 112 and a signal processing circuit 113.

The optical lens 110 images an image light (incident light) from asubject on an imaging surface of the solid-state imaging device 1.Accordingly, signal charges are accumulated in the solid-state imagingdevice 1 for a fixed period of time. The optical lens 110 may be anoptical lens system including plural optical lenses.

The shutter device 111 controls an illumination period and a shieldingperiod of light with respect to the solid-state imaging device 1.

The drive circuit 112 supplies a drive signal for controlling transferoperation of the solid-state imaging device 1 and shutter operation ofthe shutter device 111. The signal transfer is performed by a drivesignal (timing signal) supplied from the drive circuit 112. The signalprocessing circuit 113 performs various signal processing. Video signalswhich have received signal processing are stored in a storage mediumsuch as a memory or outputted to a monitor.

In related arts, the saturation charge amount of the photodiode isreduced due to reduction of the open area ratio by reducing the pixelsize, therefore, the size reduction and high image quality in theelectronic apparatus contradict each other. However, in the camera ofthe embodiment, it is possible to reduce the pixel size in thesolid-state imaging device while increasing the saturation charge amount(Qs) as well as improving sensitivity. Accordingly, it is possible toreduce size of the electronic apparatus as well as to obtain theelectric apparatus having higher image quality. In short, the sizereduction, high resolution and high image quality can be realized in theelectronic apparatus.

In the solid-state imaging device according to Embodiments 64 to 66described above, the invention is applied to the solid-state imagingdevice in which signal charges are electrons, however, it is possible tobe applied to a solid-state imaging device in which signal charges areholes. In such case, the above examples can be achieved by regarding thefirst conductive type as then-type and regarding the second conductivetype as the p-type.

FIG. 5 shows a schematic configuration of an embodiment of a solid-stateimaging device, namely, a CMOS image sensor to which the invention isapplied. A solid-state imaging device 3001 according to the embodimentincludes an imaging area 3 in which plural pixels 2 includingphotodiodes which are photoelectric converter are arranged regularly ina two-dimensional array state on a semiconductor substrate, for example,a Si substrate 11, a vertical drive circuit 4, column signal processingcircuits 5, a horizontal drive circuit 6, an output circuit 7, a controlcircuit 8 and the like as peripheral circuits thereof.

The control circuit 8 generates a clock signal, a control signal and thelike to be references of operations of the vertical drive circuit 4, thecolumn signal processing circuits 5, the horizontal drive circuit 6 andthe like based on a vertical synchronization signal, a horizontalsynchronization signal and a master clock. The clock signal, the controlsignal and the like generated in the control circuit 8 are inputted tothe vertical drive circuit 4, the column signal processing circuits 5and the horizontal drive circuit 6 and the like.

The vertical drive circuit 4 includes, for example, a shift register,selectively scanning respective pixels 2 in the imaging area 3 by therow sequentially in the vertical direction. Then, pixel signals based onsignal charges generated in accordance with the light receiving amountin photodiodes of respective pixels 2 are supplied to the column signalprocessing circuits 5 through vertical signal lines.

The column signal processing circuits 5 are arranged, for example, atrespective columns of pixels 2, performing signal processing such asnoise removal or signal amplification to signals outputted from pixels 2of one row by the pixel column using a signal from a black referencepixel area (formed around the effective pixel area though not shown)Horizontal selection switches (not shown) are provided at output stagesof the column signal processing circuits 5 between the circuits 5 and ahorizontal signal line 3010.

The horizontal drive circuit 6 includes, for example, a shift register,sequentially selecting respective column signal processing circuits 5 bysequentially outputting horizontal scanning pulses to thereby allowrespective column signal processing circuits 5 to output pixel signalsto the horizontal signal lines 3010.

The output circuit 7 performs signal processing to signals sequentiallysupplied from respective column signal processing circuits 5 through thehorizontal signal line 3010 and output the signals.

The solid-state imaging devices in Embodiments 67 to 71 explained asfollows are included in the solid-state imaging device 1 shown in FIG. 5, in which cross-sectional configurations of pixels 2 in the effectiveimaging areas are different to one another. Since other configurationsare the same as FIG. 5 , only cross-sectional configurations of relevantparts are shown in Embodiments 67 to 71, explanation of otherconfigurations is omitted.

Embodiment 67

FIG. 102 shows a cross-sectional configuration in a pixel portion of asolid-state imaging device according to Embodiment 67 of the invention.FIG. 102 shows the cross-sectional configuration of one pixel, namely, aunit pixel area 3020.

The solid-state imaging device of the embodiment includes firstconductive-type semiconductor layers and second conductive-typesemiconductor layers formed by staking plural layers alternately in thedepth direction from one face (hereinafter, a surface) side in afirst-conductive type silicon substrate 3021. Additionally, pluralvertical transistors Tr1, Tr2 and Tr3 formed in desired depths from thesurface side of the silicon substrate 3021. The vertical transistorsTr1, Tr2 and Tr3 correspond to charge transfer transistors which will bedescribed later. On the surface side of the silicon substrate 3021, awiring layer 3047 is formed and on the back side of the siliconsubstrate 3021, an on-chip lens 3031 is formed. In short, thesolid-state imaging device of the embodiment exemplifies aback-illuminated solid-state imaging device in which light is incidentfrom the opposite side of the wiring layer 3047.

In the following description, it is defined that the first conductivetype is a p-type and the second conductive type is an n-type, and thefirst conductive type semiconductor layer indicates a p-typesemiconductor layer and the second conductive type semiconductor layerindicates an n-type semiconductor layer which are formed in a stackedmanner.

The p-type semiconductor layer and the n-type semiconductor layer formedso to be stacked alternately in the silicon substrate 3021 are formed ata region to be a photodiode in the unit pixel area 3020. In theembodiment, a first p-type semiconductor layer 3028, a first n-typesemiconductor layer 3027, a second p-type semiconductor layer 3026, asecond n-type semiconductor layer 3025, a third p-type semiconductorlayer 3024 and a third n-type semiconductor layer 3023 are sequentiallystacked in the surface side of the silicon substrate 3021. The p-typesemiconductor layers and n-type semiconductor layers stacked alternatelymake up plural photodiodes in the unit pixel area 3020. The first tothird p-type semiconductor layers 3028, 3026, and 3024 and the first tothird n-type semiconductor layers 3027, 3025 and 3023 are formed in aflat-plate shape and stacked. In the embodiment, the first to thirdp-type semiconductor layers 3028, 3026, and 3024 have higher impurityconcentration than the p-type silicon substrate 3021.

The first n-type semiconductor layer 3027 which is formed on the mostfront side is formed so that the depth of a pn junction “j1” between thefirst p-type semiconductor layer 3028 and the first n-type semiconductorlayer 3027 will be the depth corresponding to a position where red lightis absorbed when light is illuminated from the back side. The secondn-type semiconductor layer 3025 formed in the second depth from thefront side is formed so that the depth of a pn junction “j2” between thesecond p-type semiconductor layer 3026 and the second n-typesemiconductor layer 3025 will be the depth corresponding to a positionwhere green light is absorbed when light is illuminated from the backside. The third n-type semiconductor layer 3023 formed on the most backside is formed so that the depth of a pn junction “j3” between the thirdp-type semiconductor layer 3024 and the third n-type semiconductor layer3023 will be the depth corresponding to a position where blue light isabsorbed when light is illuminated from the back side.

Then, the first p-type semiconductor layer 3028 and the first n-typesemiconductor layer 3027 make up a first photodiode PD1 which performsphotoelectric conversion of red light.

The second p-type semiconductor layer 3026 and the second n-typesemiconductor layer 3025 make up a photodiode PD2 which performsphotoelectric conversion of green light.

The third p-type semiconductor layer 3024 and the third n-typesemiconductor layer 3023 make up a photodiode PD3 which performsphotoelectric conversion of blue light.

The pn junctions “j1” to “j3” are formed in the first to thirdphotodiodes PD1 to PD3, thereby forming potential wells in the first tothird n-type semiconductor layers 3027, 3025 and 3023. Accordingly, inthe first to third photodiodes PD1 to PD3, signal charges obtained byphotoelectric conversion at respective first to third n-typesemiconductor layers 3027, 3025 and 3023 and the vicinity thereof areaccumulated in the potential wells formed in respective first to thirdn-type semiconductor layers 3027, 3025 and 3023. That is, the respectivefirst to third n-type semiconductor layers 3027, 3025 and 3023correspond to signal accumulation regions. The accumulation capacitanceof signal charges is determined by the potential difference betweenthen-type semiconductor layer and the p-type semiconductor layer and thedepletion layer capacitance. Since the first to third p-typesemiconductor layers 3028, 3026 and 3024 have higher impurityconcentration than the silicon substrate 3021 in the embodiment, theaccumulation capacitance of signal charges in the first to thirdphotodiodes PD1 to PD3 can be sufficiently secured.

In the present embodiment, the transfer transistor Tr1, Tr2 and Tr3including gate electrodes 3033, 3037 and 3042 corresponding to the aboverespective first to third photodiodes PD1 to PD3 are formed.

First, the gate electrode 3033 of the first transfer transistor Tr1 isformed in a depth reaching the pn junction “j1” of the first photodiodePD1 from the surface side of the silicon substrate 3021. The gateelectrode 3037 of the second transfer transistor Tr2 is formed in adepth reaching the pn junction “j2” of the second photodiode PD2 fromthe surface side of the silicon substrate 3021. The gate electrode 3042of the third transfer transistor Tr3 is formed in a depth reaching thepn junction “j3” of the third photodiode PD3 from the surface side ofthe silicon substrate 3021.

These gate electrodes 3033, 3037 and 3042 are formed by providingvertical openings in the silicon substrate 3021 in which the first tothird photodiode PD1 to PD3 are formed, and burying an electronicmaterial to the openings through a gate insulating film 3034.Additionally, the gate electrodes 3033, 3037 and 3042 are formed in acolumnar shape or a prismatic shape, which is formed in a long verticalshape along the depth direction of the silicon substrate 3021. Inrespective vertical transfer transistors Tr1, Tr2 and Tr3, a gateportion is respectively formed by including each of the gate electrodes3033, 3037 and 3042, the gate insulating film 3034 and a later-describedchannel portion.

Here, a gate length of the gate portion including the gate electrode3042 of the third transfer transistor Tr3 is longer than a gate lengthof the gate portion including the gate electrode 3037 of the secondtransfer transistor Tr2. A gate length of the gate portion including thegate electrode 3037 of the second transfer transistor Tr2 is longer thana gate length of the gate portion including gate electrode 3033 of thefirst transfer transistor Tr1.

At regions on the surface of the silicon substrate 3021 as well astouching gate portions corresponding to the respective gate electrodes3033, 3037 and 3042, n-type semiconductor regions having high impurityconcentration, namely, n+source/drain regions 3046, 3041 and 3045 areindividually formed. Accordingly, the first to third transfertransistors Tr1, Tr2 and Tr3 included in the solid-state imaging deviceof the embodiment are vertical transistors in which signal charges aretransferred in a vertical direction along the vertical gate electrodes303 3, 3037 and 3042 buried in the silicon substrate 3021.

According to the above configuration, a channel portion 3039 of thefirst transfer transistor Tr1 is formed from the first n-typesemiconductor layer 3027 to the n+source/drain region 3 046 along thevertical gate electrode 3033. A channel portion 3040 of the secondtransfer transistor Tr2 is formed from the second n-type semiconductorlayer 3025 to the n+source/drain region 3041 along the vertical gateelectrode 3037. A channel portion 3044 of the third transfer transistorTr3 is formed from the third n-type semiconductor layer 3023 to then+source/drain region 3045 along the vertical gate electrode 3042. Thesechannel portions 3039, 3040 and 3044 are preferably formed in thevertical direction with respect to the surface of the silicon substrate3021 so as to be parallel to the respective gate electrodes 3033, 3037and 3042.

In the first transfer transistor Tr1, the first n-type semiconductorlayer 3027 included in the first photodiode PD1 doubles as thesource/drain region. Accordingly, signal charges accumulated in thefirst n-type semiconductor layer 3027 are transferred to then+source/drain region 3046 through the channel portion 3039.

In the second transfer transistor Tr2, the second n-type semiconductorlayer 3025 included in the second photodiode PD2 doubles as thesource/drain region. Accordingly, signal charges accumulated in thesecond n-type semiconductor layer 3025 are transferred to then+source/drain region 3041 through the channel portion 3040.

In the third transfer transistor Tr3, the third n-type semiconductorlayer 3023 included in the third photodiode PD3 doubles as thesource/drain region. Accordingly, signal charges accumulated in thethird n-type semiconductor layer 3023 are transferred to then+source/drain region 3045 through the channel portion 3044.

In the first to third transfer transistor Tr1 to Tr3, the n+source/drainregions 3046, 3041 and 3045 formed at regions on the surface of thesilicon substrate 3021 as well as touching the respective gateelectrodes 3033, 3037 and 3042 will be floating diffusions FD,respectively.

The wiring layer 3047 is formed on the surface side of the siliconsubstrate 3021. In the wiring layer 3047, desired wirings are formedthrough an interlayer insulating film 3030. The embodiment is an exampleof including wirings M1 to M3 formed in three layers, and these wiringsM1 to M3 are connected to desired gate electrodes or a power supply. Theconnection among wirings M1 to M3 are performed by providing a contact3049 or a VIA.

On the back side of the silicon substrate 3021, the on-chip lens 3031 isformed. Light illuminated from the back side of the silicon substrate3021 is condensed on the on-chip lens 3031 and incident into the unitpixel area 3020 through, for example, a silicon oxide film 3032.

In the solid-state imaging device having the above configuration, lightincident from the back side of the silicon substrate 3021 isphotoelectrically converted in the first to third photodiodes PD1 toPD3, and signal charges are accumulated. Since the first to thirdphotodiodes PD1 to PD3 are respectively formed in different depths inthe silicon substrate 3021, lights having different wavelengths areabsorbed in the first to third photodiodes PD1 to PD3 respectively. Inthe first photodiode PD1, red light is absorbed, in the secondphotodiode PD2, green light is absorbed and in the third photodiode PD3,blue light is absorbed.

Then, respective lights incident on the first to third photodiodes PD1to PD3 are photoelectrically converted and signal charges by thephotoelectric conversion are accumulated into the first to third n-typesemiconductor layers 3027, 3025 and 3023. That is, signal chargesobtained by photoelectric conversion of red light are accumulated in thefirst n-type semiconductor layer 3027, signal charges obtained byphotoelectric conversion of green light are accumulated in the secondn-type semiconductor region 3025, and signal charges obtained byphotoelectric conversion of blue light are accumulated in the thirdn-type semiconductor region 3023.

As described above, in the solid-state imaging device of the embodiment,the first to third photodiodes PD1 to PD3 are included in the unit pixelarea 3020, therefore, signal charges obtained by three lights can beaccumulated respectively.

Incidentally, in the solid-state imaging device of the embodiment, thegate electrode 3042 of the third transfer transistor Tr3 which has thelongest channel length touches all then-type semiconductor layers 3027,3025 and 3023 through the gate insulating film 3034. The gate electrode3027 of the second transfer transistor Tr2 which has the second longestchannel length touches the first and second n-type semiconductor layers3027, 3025 through the gate insulating film 3034.

FIG. 103 shows an equivalent circuit of a unit pixel in the solid-stateimaging device of the embodiment. In the unit pixel, the firstphotodiode PD1, the second photodiode PD2 and the third photodiode PD3are included, and respective photodiodes PD1, PD2 and PD3 are connectedto respective floating diffusions PD1, FD2 and FD3 through the first,second and third transfer transistors Tr1, Tr2 and Tr3. The secondtransfer transistor Tr2 includes two transistors Q2, Q3 which areequivalently connected in series. The third transfer transistor Tr3includes three transistors Q4, Q5 and Q6 which are equivalentlyconnected in series. Gates of the two transistors Q2 and Q3 included inthe second transfer transistor Tr2 are connected to each other. Gates ofthe three transistors Q4, Q5 and Q6 included in the third transistor Tr3are connected to one another. Further, a source of the first transfertransistor, a source of the transistor Q3 included in the secondtransistor Tr2 and a source of the transistor Q6 included in the thirdtransfer transistor Tr3 are connected to one another. Additionally, asource of the transistor Q2 included in the second transfer transistorTr2 and a source of the transistor Q5 included in the third transfertransistor Tr3 are connected to each other.

As can be seen from FIG. 103 , in the configuration of the embodiment,signal charges of red color in the first photodiode PD1 are transferredto the first to third floating diffusions FD1 to FD3 by the first tothird transfer transistors Tr1 to Tr3, signal charges of green colorfrom the second photodiode PD2 are transferred to the second and thirdfloating diffusions FD2, FD3 by the second and third transfertransistors Tr2, Tr3.

As a result, signal charges obtained by photoelectric conversion oflights of various colors are read by the same transfer transistors alltogether except in the gate electrode 3033 of the first transfertransistor Tr1, which causes color mixture.

A method of reading signal charges accumulated in the respective firstto third photodiodes PD1 to PD3 without causing color mixture in thesolid-state imaging device of the embodiment will be explained below.

First, light is illuminated from the back side of the solid-stateimaging device to accumulate signal charges in the first to thirdphotodiodes PD1 to PD3.

Next, signal charges are read by using the third transfer transistorTr3. As described above, the gate electrode 3042 of the third transfertransistor Tr3 touches the first to third n-type semiconductor layers3027, 3025 and 3023 through the gate insulating film 3034. Therefore,signal charges accumulated in the first to third n-type semiconductorlayers 3027, 3025 and 3023 are read to the n+source/drain region 3045 ofthe third transfer transistor Tr3 to be the third floating diffusion FD3along the channel portion 3044 formed under the gate electrode 3042 ofthe third transfer transistor Tr3. That is, all signal chargesaccumulated in the first to third photodiodes PD1 to PD3 are read out bythe gate electrode 3042 of the third transfer transistor Tr3. An outputpotential by signal charges read to the n+source/drain region 3045 ofthe third transfer transistor Tr3 will be an output potential arisingfrom red, green and blue lights.

The output potential is VRGB.

Next, light is illuminated from the back side of the solid-state imagingdevice again to accumulate signal charges in the first to thirdphotodiodes PD1 to PD3.

Then, signal charges are read by using the second transfer transistorTr2. As described above, the gate electrode 3037 of the second transfertransistor Tr2 touches the first and second n-type semiconductor layers3027, 3025 through the gate insulating film 3034. Therefore, signalcharges accumulated in the first and second n-type semiconductor layers3027, 3025 are read to the n+source/drain region 3041 of the secondtransfer transistor Tr2 to be the second floating diffusion FD2 alongthe channel portion 3040 formed under the gate electrode 3037 of thesecond transfer transistor Tr2. That is, signal charges accumulated inthe first and second photodiodes PD1, PD2 are read out by the gateelectrode 3037 of the second transfer transistor Tr2. An outputpotential by signal charges read to the n+source/drain region 3041 ofthe second transfer transistor Tr2 will be an output potential arisingfrom red and green lights.

The output potential is VRG.

Next, light is illuminated from the back side of the solid-state imagingdevice again to accumulate signal charges in the first to thirdphotodiodes PD1 to PD3.

Then, signal charges are read by using the first transfer transistorTr1. The gate electrode 3033 touches only the first n-type semiconductorlayer 3027 through the gate insulating film 3034. Therefore, signalcharges accumulated in the first n-type semiconductor layer 3027 areread to the n+source/drain region 3046 of the first transfer transistorTr1 to be the first floating diffusion FD1 along the channel portion3039 formed under the gate electrode 3033 of the first transfertransistor Tr1. An output potential by signal charges read to then+source/drain region 3046 of the first transfer transistor Tr1 will bean output potential arising from only red light.

The output potential is VR.

Then, output potentials VR, VG and VB corresponding to respective colorsare calculated by the three output potentials VRGB, VRG and VR read bythe above procedure.

For example, the output potential VB corresponding to blue light isdetected by the following calculation formula.

VRGB−VRG=VB

The output potential VG corresponding to green light is detected by thefollowing calculation formula.

VRG−VR=VG

The output potential VR corresponding to red light is equivalent to theoutput potential detected by the first transfer transistor Tr1.

The above calculations are performed by signal processing in theperipheral circuits, and color separation of three colors can beperformed according to the calculations.

According to the embodiment, it is possible to read charges accumulatedin the photodiodes formed at the deep position in the silicon substrate3021 efficiently without residual charges by using the vertical transfertransistors in which gate electrodes are buried in respective depths ofplural photodiodes. As a result, residual images can be suppressed.

Additionally, the vertical transfer transistors in which gate electrodes3033, 3037 and 3042 are buried in the silicon substrate 3021 are used,therefore, it is not necessary that then-type semiconductor layers 3027,3025 and 3023 to be respective charge accumulation regions of the firstto third photodiodes PD1 to PD3 are exposed on the surface of thesilicon substrate 3021. Therefore, it is possible to prevent noise onthe surface of the silicon substrate 3021, which occurs while signalcharges are accumulated in the first to third photodiodes PD1 to PD3.

Furthermore, according to the embodiment, the first to third photodiodesPD1 to PD3 are formed by stacking plural layers of flat plate-shapedp-type semiconductor layers and n-type semiconductor layers, and depthsof pn junctions of respective photodiodes are fixed in the substrate.Accordingly, color mixture in respective photodiodes can be suppressed.

Moreover, the flat plate-shaped p-type semiconductor layers and n-typesemiconductor layers are alternately stacked, thereby forming pluraldifferent photodiodes in the depth direction, and further, the gateelectrodes 3033, 3037 and 3042 are buried in the depths of respectivefirst to third photodiodes PD1 to PD3. Therefore, the design of furtherstacking the p-type semiconductor layer and the n-type semiconductorlayer to increase the photodiode is easy, and the design of forming thecorresponding buried gate electrode is also easy. In the embodiment,three photodiodes are formed in the unit pixel area 3020, however, it isnot limited to this and four or more photodiodes can be formed.

In plural photodiodes formed by stacking the flat plate-shaped p-typesemiconductor layers and the n-type semiconductor layers, the open arearatio can be equally formed in the unit pixel area, and the open arearatio of each photodiode is not reduced. Therefore, color separation canbe performed without reducing the open area rate in plural photodiodesin the unit pixel area.

Also in the embodiment, it is possible to increase the open area ratioand improve sensitivity by applying the back-illuminated type.

In the method of reading signal charges sequentially from the thirdtransfer transistor Tr3 including the gate electrode 3042 having thelongest gate length in the first to third transfer transistors Tr1 toTr3 as in the embodiment, time for accumulating signal charges isnecessary every time signal charges are read.

Embodiment 68

Next, as a solid-state imaging device according to Embodiment 68, asolid-state imaging device and a reading method thereof which can readsignal charges of the first to third photodiodes PD1 to PD3 at the sametime will be explained. Since a cross-sectional configuration in theunit pixel area 3020 of the solid-state imaging device according to theembodiment of the invention is the same as Embodiment 67 shown in FIG.102 , it is not shown. Since a circuit configuration of a transfertransistor portion in the solid-state imaging device of the embodimentis also the same as FIG. 103 , it is not shown.

In the present embodiment, positions in which the gate electrodes 3033,3037 and 3042 in the first to third transfer transistors Tr1 to Tr3 inEmbodiments 67 to 69 are formed are prescribed in the solid-stateimaging device in Embodiment 67.

In the embodiment, the signal charge amount accumulated in the thirdphotodiode PD3 is read by each of the first to third transfertransistors Tr1 to Tr3 in equal proportions, for example, one thirdeach. For that purpose, for example, positions where the gate electrodes3033, 3037 and 3042 of the first to third transfer transistors Tr1 toTr3 are formed are prescribed as positions where the signal chargeamount accumulated in the third photodiode PD3 can be read in equalproportions, namely, one third each.

Additionally, the signal charge amount accumulated in the secondphotodiode PD2 is read by each of the first and second transfertransistors Tr1, Tr2 in equal proportions, namely, one half each. Forthat purpose, for example, positions where the gate electrodes 3033,3037 of the first and second transfer transistors Tr1, Tr2 are formedare prescribed as positions where the signal charge amount accumulatedin the second photodiode PD2 can be read in equal proportions, namely,one half each.

In the solid-state imaging device of the embodiment, signal charges areread by the first to third transfer transistors Tr1 to Tr3 at the sametime.

Signal charges arising from red light accumulated in the firstphotodiode PD1 is read to each of the n+source/drain regions 3046, 3041and 3045 by the channel portions 3039, 3040 and 3044 of the first tothird transfer transistors Tr1 to Tr3 in equal proportions, namely, onethird each. That is, in the circuit diagram shown in FIG. 103 , signalcharges of red color transferred from the first photodiode PD1 aretransferred by each of the first to third transfer transistors Tr1 toTr3 in equal proportions, namely, one third each. Signal charges ofgreen color transferred from the second photodiode PD2 are transferredby each of the second and third transfer transistors Tr2, Tr3 in equalproportions, namely, one half each. Also, all signal charges of bluecolor transferred from the third photodiode PD3 are transferred by thethird transfer transistor Tr3.

According to the same principle, signal charges arising from green lightaccumulated in the second photodiode PD2 are read to the n+source/drainregions 3046, 3041 by the channel portions 3039, 3040 of the first andsecond transfer transistors Tr1, Tr2 in equal proportions, namely, onehalf each.

Signal charges arising from blue light accumulated in the thirdphotodiode PD3 are read to the n+source/drain region 3045 only by thechannel portion 3044 of the third transfer transistor Tr3.

Here, signal charges accumulated in the first photodiode PD1 arerepresented as ER, signal charges accumulated in the second photodiodePD2 are represented as EG and signal charges accumulated in the thirdphotodiode PD3 are represented as EB.

Then, signal charges read to the n+source/drain region 3045 by the thirdtransfer transistor Tr3 are represented as (⅓)ER+(½)EG+EB. Signalcharged read to the n+source/drain region 3041 are represented as(⅓)ER+(½)EG. Additionally, signal charges read to the n+source/drainregion 3046 are represented as (⅓)ER.

The signal charges read as described above are calculated at theperipheral circuits to derive respective signal charges ER, EG and EB,thereby performing color separation of three colors.

In the embodiment, positions where the gate electrodes 3033, 3037 and3042 in the first to third transfer transistors Tr1 to Tr3 are formedare prescribed, however, it is not limited to this. It is alsopreferable that charge amounts which can be read in respective first tothird transfer transistors Tr1 to Tr3 are checked in advance andrespective signal charges ER, EG and EB are calculated in considerationof these values.

In the embodiment, the same advantages as Embodiment 67 can be obtainedas well as the advantage in which signal charges of plural photodiodesformed in the unit pixel area can be read at the same time can beobtained.

Embodiment 69

Next, FIG. 104A shows a cross-sectional configuration in a pixel portionof a solid-state imaging device according to Embodiment 6 9 of theinvention. FIG. 104A shows the cross-sectional configuration in onepixel, namely, in the unit pixel area 3020. In FIG. 104A, same symbolsare given to portions corresponding to FIG. 102 , and the repeatedexplanation is omitted. In addition, since the circuit diagram of thetransfer transistors of the solid-state imaging device in the embodimentis the same as FIG. 103 , it is not shown.

In the embodiment, a mechanical shutter 3050 is provided on the lightincident side, namely, the back side of the solid-state imaging device.Other configurations are the same as Embodiment 67.

The mechanical shutter 3050 used in the embodiment opens when light isincident and shuts when light incident is not necessary.

A method of reading signal charges accumulated in the first to thirdphotodiodes PD1 to PD3 in the solid-state imaging device of theembodiment will be explained below.

First, light is incident on the first to third photodiodes PD1 to PD3 inthe opened state of the mechanical shutter 3050 to accumulate signalcharges by photoelectric conversion.

Next, the mechanical shutter 3050 is shut to block outer light which isincident on the first to third photodiodes PD1 to PD3. In this stage, astate in which signal charges are accumulated in the first to thirdphotodiodes PD1 to PD3 is kept.

Next, signal charges accumulated in the first photodiode PD1 are read tothe n+source/drain region 3046 by the first transfer transistor Tr1.Since signal charges corresponding to red light are accumulated in thefirst photodiode PD1, signal charges read to the n+source/drain region3046 of the first transfer transistor Tr1 are obtained by photoelectricconversion of red light.

Next, signal charges accumulated in the second photodiode PD2 are readto the n+source/drain region 3041 by the second transfer transistor Tr2.Since the gate electrode 3037 in the second transfer transistor Tr2 alsotouches the first n-type semiconductor layer 3027 included in the firstphotodiode PD1 through the gate insulating film 3034, the first n-typesemiconductor layer 3027 is connected to the n+source/drain region 3041of the second transfer transistor Tr2 by the channel portion 3040 of thesecond transfer transistor Tr2. However, signal charges accumulated inthe first photodiode PD1 (first n-type semiconductor layer 3027) havealready been read in the previous stage. Accordingly, only the signalcharges accumulated in the second photodiode PD2 are read to then+source/drain region 3041 of the second transfer transistor Tr2. Thatis, in the circuit diagram of FIG. 103 , there is no signal transferredfrom the first photodiode PD1 to the second transfer transistor Tr2.

Since signal charges corresponding to green light are accumulated in thesecond photodiode PD2, signal charges read to the n+source/drain region3041 of the second transfer transistor Tr2 are obtained by photoelectricconversion of green light.

Subsequently, signal charges accumulated in the third photodiode PD3 areread to the n+source/drain region 3045 by the third transfer transistorTr3. The gate electrode 3042 in the third transfer transistor Tr3 alsotouches the first and second n-type semiconductor layers 3027, 3025included in the first and second photodiodes PD1, PD2 through the gateinsulating film 3034, therefore, the first n-type semiconductor layer3027, the second n-type semiconductor layer 3025 are connected to then+source/drain region 3045 of the third transfer transistor Tr3 by thechannel portion 3044 of the third transfer transistor Tr3. However,signal charges accumulated in the first and second photodiodes PD1, PD2(first and second n-type semiconductor layers 3027, 3025) have alreadybeen read in the previous stage. Accordingly, only the signal chargesaccumulated in the third photodiode PD3 are read to the n+source/drainregion 3045 of the third transfer transistor Tr3. That is, in thecircuit diagram of FIG. 103 , there is no signal transferred from thefirst and second photodiodes PD1, PD2 to the third transfer transistorTr3. Since signal charges corresponding to blue light are accumulated inthe third photodiode PD3, signal charges read to the n+source/drainregion 3045 of the third transfer transistor Tr3 are obtained byphotoelectric conversion of blue light.

In the embodiment, signal charges are read from the photodiodesconnected to the gate electrodes in the order from the shallower todeeper positions, thereby performing color separation of three colors ofred, green and blue. In the embodiment, outside light is blocked by themechanical shutter 3050 when signal charges are read. Accordingly, it ispossible to prevent accumulation of signal charges in other photodiodeswhile reading signal charges of a certain photodiode.

When the mechanical shutter 3050 having the above configuration isactually used, the mechanical shutter 3050 is arranged between thesolid-state imaging device 3001 in which pixels 3002 are arranged in anarray state and an optical lens system 3071 for condensing light signals3070 on the solid-state imaging device 3001 as shown in FIG. 1046 . Inthe configuration, light signals incident on the whole imaging area ofthe solid-state imaging device 3001 are controlled.

In the embodiment, not only the same advantages as Embodiment 67 can beobtained but also an advantage in which signal charges of pluralphotodiodes formed in the unit pixel area can be read at the same timeby using the mechanical shutter 3050.

In the embodiment, the example of using the mechanical shutter 3050 isshown, however, if time necessary for reading charges is sufficientlyshort as compared with exposure time, the above advantage can beobtained even when the mechanical shutter is not provided.

Embodiment 70

Next, FIG. 105 shows a cross-sectional configuration of a pixel portionin a solid-state imaging device according to Embodiment 70 of theinvention. FIG. 105 shows the cross-sectional configuration in onepixel, namely, in the unit pixel area 3020. In FIG. 105 , same symbolsare given to portions corresponding to FIG. 102 , and the repeatedexplanation is omitted.

In the solid-state imaging device of the embodiment, the configurationof a contact portion between the gate portion and the n-typesemiconductor layer included in the photodiode in the solid-stateimaging device of Embodiment 67 is partly modified.

As shown in FIG. 105 , a p-type semiconductor region 3051 is formedaround the gate electrode 3037 positioned in the depth of the firstn-type semiconductor layer 3027 in the gate electrode 3037 included inthe second transfer transistor Tr2. That is, the p-type semiconductorregion 3051 is formed in a portion of the first n-type semiconductorlayer 3027 to be the charge accumulation region of the first photodiodewhich touches the second transfer transistor Tr2.

Also, a p-type semiconductor region 3052 is formed around the gateelectrode 3042 positioned in the depth of the first n-type semiconductorlayer 3027 and the second n-type semiconductor layer 3025 in the gateelectrode 3042 included in the third transfer transistor Tr3. That is,the p-type semiconductor region 3052 is formed in portions of the firstand second n-type semiconductor layers 3027, 3025 to be the chargeaccumulation regions of the first and second photodiodes PD1, PD2 whichtouch the third transfer transistor Tr3.

As described above, the portions of photodiodes other than thephotodiode to be a reading target which touch the gate electrodes 3037,3042 included in the second and third transfer transistors Tr2, Tr3 arecovered with the p-type semiconductor regions having the inversecharacteristic to the n-type semiconductor layer as the chargeaccumulation region. It is possible to suppress movement of signalcharges accumulated in then-type semiconductor layer to the channelportion at the portions where the p-type semiconductor regions areformed.

FIG. 106 shows an equivalent circuit of a unit pixel in the solid-stateimaging device of the embodiment. In the embodiment, the p-typesemiconductor regions 3051, 3052 are formed at necessary positions ofthe gate electrode 3037 and the gate electrode 3042, therebytransferring signal charges accumulated in the first to thirdphotodiodes PD1 to PD3 by independent circuits respectively.

Therefore, in the second transfer transistor Tr2, only the signalcharges accumulated in the second photodiode PD2 are read. Similarly, inthe third transfer transistor Tr3, only the signal charges accumulatedin the third photodiode PD3 are read. The gate electrode 3033 includedin the first transfer transistor Tr1 is originally configured to touchonly the first photodiode PD1. Accordingly, also in the first transfertransistor Tr1, only the signal charges accumulated in the firstphotodiode PD1 are read.

According to the embodiment, the circuits which transfer signal chargesare independent from one another, therefore, signal charges arising fromone color can be read in one transfer transistor. Therefore, signalcharges accumulated in the first to third photodiodes PD1 to PD3 can beread in the unit pixel area 3020 at the same time as well asindependently.

In the embodiment, not only the same advantages as Embodiment 67 can beobtained but also signal charges accumulated in respective photodiodescan be read at the same time because signal charges of one photodiodeare read by one transfer transistor.

Embodiment 71

FIG. 107 shows a cross-sectional configuration in a pixel portion of asolid-state imaging device according to Embodiment 71. FIG. 107 showsthe cross-sectional configuration in one pixel, namely, in the unitpixel area 3020. In FIG. 107 , same symbols are given to the sameportions corresponding to FIG. 102 and the repeated explanation isomitted. The circuit configuration of the transfer transistor portion ofthe solid-state imaging device of the embodiment is the same as FIG. 106, therefore, it is not shown.

In the solid-state imaging device of the embodiment, the configurationof then-type semiconductor layer and the p-type semiconductor layerincluded in the photodiode in the solid-state imaging device ofEmbodiment 67 is modified.

In the embodiment, three photodiodes each having a planar p-typesemiconductor layer and an n-type semiconductor layer are formedseparately in different depths in the silicon substrate 3021 in the unitpixel area 3020. The respective photodiodes are formed by staking thep-type semiconductor layer, the n-type semiconductor layer and thep-type semiconductor layer in this order from the surface side.

In the embodiment, a photodiode formed by stacking a p-typesemiconductor layer 3056 an n-type semiconductor layer 3055 and a p-typesemiconductor layer 3054, which is positioned on the most front side inthe silicon substrate 3021 is the first photodiode PD1. Also, aphotodiode formed by stacking a p-type semiconductor layer 3059, ann-type semiconductor layer 3058 and a p-type semiconductor layer 3057,which is positioned in the middle of the silicon substrate 3021 is thesecond photodiode PD2. Further, a photodiode formed by stacking a p-typesemiconductor layer 3062, an n-type semiconductor layer 3061 and ap-type semiconductor layer 3060, which is positioned on the most backside in the silicon substrate 3021 is the third photodiode PD3.

The pn junction “j1” between the p-type semiconductor layer 3056 andthen-type semiconductor layer 3055 included in the first photodiode PD1is formed in the depth in which red light is absorbed when light isilluminated from the back side.

The pn junction “j2” between the p-type semiconductor layer 3059 andthen-type semiconductor layer 3058 included in the second photodiode PD2is formed in the depth in which green light is absorbed when light isilluminated from the back side.

The pn junction “j3” between the p-type semiconductor layer 3062 andthen-type semiconductor layer 3061 included in the third photodiode PD3is formed in the depth in which blue light is absorbed when light isilluminated from the back side.

Also in the embodiment, the gate electrodes 3033, 3037 and 3042 oftransfer transistors corresponding to the above respective first tothird photodiodes PD1 to PD3 are formed in the same manner as Embodiment67 to Embodiment 70.

First, the gate electrode 3033 of the first transfer transistor Tr1 isformed in the depth reaching the pn junction “j1” of the firstphotodiode PD1 from the surface side of the silicon substrate 3021. Thegate electrode 3037 of the second transfer transistor Tr2 is formed inthe depth reaching the pn junction “j2” of the second photodiode PD2from the surface side of the silicon substrate 3021. The gate electrode3042 of the third transfer transistor Tr3 is formed in the depthreaching the pn junction “j3” of the third photodiode PD3 from thesurface side of the silicon substrate 3021. Other configurations of thefirst to third transfer transistors Tr1 to Tr3 are the same asEmbodiment 67 to Embodiment 70, therefore, repeated explanation isomitted.

In the embodiment, signal charges accumulated in the first photodiodePD1 are read by the first transfer transistor Tr1. Signal chargesaccumulated in the second photodiode PD2 are read by the second transfertransistor Tr2. Further, signal charges accumulated in the thirdphotodiode PD3 are read by the third transfer transistor Tr3.

According to the solid-state imaging device of the embodiment, the firstto third photodiodes PD1 to PD3 are formed separately, and each of thegate electrodes 3033, 3037 and 3042 of the first to third transfertransistors Tr1 to Tr3 touches only the desired photodiode through thegate insulate film 3034. The solid-state imaging device having the aboveconfiguration has the circuit configuration as shown in FIG. 106 . Asshown in FIG. 106 , also in the embodiment, signal charges accumulatedin the first to third photodiodes PD1 to PD3 are transferred byindependent circuits respectively. Accordingly, in each of the first tothird transfer transistors Tr1 to Tr3, only the signal charges by onecolor light can be read, respectively. As a result, it is possible toprevent color mixture.

The above-described solid-state imaging devices according to Embodiment67 to Embodiment 71 are included in, for example, the solid-stateimaging device 1 shown in FIG. 5 . The solid-state imaging device 1shown in FIG. 5 has a configuration in which pixels are arranged in atwo-dimensional array state, however, the configuration adapted to thesolid-state imaging devices according to Embodiment 67 to Embodiment 71is not limited to this. For example, a solid-state imaging device havinga configuration in which pixels are linearly arranged can be applied.

In the above embodiments, the solid-state imaging devices when appliedto the CMOS image sensor are shown, however, the invention can beapplied to CCD image sensor. Further, solid-state imaging devices ofEmbodiments 67 to 71 take the back-illuminated type in which light isincident from the opposite side of the wiring layer 3047 as an example,however, it is not limited to this. That is, it is possible to apply afront-illuminated solid-state imaging device in which light is incidentfrom the same surface side as the wiring layer.

In the case of applying the front-illuminated solid-state imagingdevice, it is preferable that the pn junction “j1” is in the depthcorresponding to a position where blue light is absorbed when light isilluminated from the front surface side in the solid-state imagingdevices according to Embodiment 67 to Embodiment 71. Also, it ispreferable that the pn junction “j2” is in the depth corresponding to aposition where green light is absorbed when light is illuminated fromthe front surface side. Further, it is preferable that the pn junction“j3” is in the depth corresponding to a position where red light isabsorbed when light is illuminated from the front surface side. The gatelengths of the gate electrodes 3033, 3037, 3042 of the first to thirdtransfer transistors Tr1, Tr2 and Tr3 may be formed so as to correspondto the above. That is, when applying the front-illuminated solid-stateimaging device, the gate electrodes 3033, 3037 and 3042 of the first tothird transfer transistors Tr1 to Tr3 in FIG. 102 correspond to blue,green and red photodiodes, respectively.

In the embodiments, the invention is applied to the solid-state imagingdevice in which signal charges are electrons. The invention also can beapplied to a solid-state imaging device in which signal charges areholes. In this case, it is possible to configure the device by using anopposite conductive-type semiconductor substrate and a semiconductorlayer.

The solid-state imaging device according to the above embodiments can beapplied to electronic apparatuses such as a camera, a cellular phonewith a camera, and other apparatuses having imaging functions.

Next, FIG. 108 shows an embodiment of an electronic apparatus to whichthe solid-state imaging device according to Embodiment 67 to Embodiment71 is used. In the embodiment, a camera is used as an example of anelectronic apparatus.

As shown in FIG. 108 , it is preferable that an electronic apparatus3080 according to the embodiment is configured as an electronicapparatus 3085 which includes a solid-state imaging device 3082, anoptical lens system 3081, an input/output unit 3084 and a signalprocessing device 3083, or configured as an electronic apparatus 3086which includes the solid-state imaging device 3082, the optical lenssystem 3081 and the input/output unit 3084. As the solid-state imagingdevice 3082, the solid-state imaging device according to Embodiment 67to Embodiment 71 is used.

The solid-state imaging device according to Embodiment 67 to Embodiment71 is provided in the electronic apparatus 3080 of the embodiment,thereby reducing color mixture, false colors, residual images and noise,as a result, images with color sensitivity can be obtained.

The configuration of FIG. 108 can be realized as a camera module, or animaging module including imaging functions. The invention can be appliedto electronic apparatuses such as a cellular phone with a camera, andother apparatuses including imaging functions by including such module.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is: 1-13. (canceled)
 14. A light detecting device,comprising: a semiconductor substrate; a photoelectric conversion regiondisposed in the semiconductor substrate; a first vertical gate electrodedisposed in the semiconductor substrate, wherein at least a part of thefirst vertical gate electrode overlapping the photoelectric conversionregion in a plan view; a second vertical gate electrode disposed in thesemiconductor substrate, wherein at least a part of the second verticalgate electrode overlapping the photoelectric conversion region in theplan view; and a floating diffusion region disposed in the semiconductorsubstrate, electrically connected to the transfer transistor, whereinthe first vertical gate electrode and the second vertical gate electrodeare configured to transfer a charge generated in the photoelectricconversion region to the floating diffusion region.
 15. The lightdetecting device according to claim 14, further comprising a gateinsulating film formed on a first surface of the semiconductorsubstrate, wherein floating diffusion region is in contact with each ofthe first vertical gate electrode and the second vertical gate electrodethrough the gate insulating film.
 16. The light detecting deviceaccording to claim 15, wherein each of the first vertical gate electrodeand the second vertical gate electrode is in contact with a first sideof the gate insulating film.
 17. The light detecting device according toclaim 16, wherein the floating diffusion region is formed on a secondside of the gate insulating film opposite the first side of the gateinsulating film.
 18. The light detecting device according to claim 17,wherein the floating diffusion region is provided between the secondside of the gate insulating film and the photoelectric conversionregion.
 19. The light detecting device according to claim 14, whereinthe first vertical gate electrode and the second vertical gate electrodeare provided around a peripheral portion of the photelectric conversionregion.
 20. The light detecting device according to claim 14, whereinthe floating diffusion region is provided within a corner portion of thephotelectric conversion region and an isolation region of thesemiconductor substrate.
 21. The light detecting device according toclaim 14, wherein the floating diffusion region is provided completelywithin the photoelectric conversion region.
 22. The light detectingdevice according to claim 15, wherein the first vertical gate electrodeand the second vertical gate electrode extend through a first surface ofthe photoelectric conversion region.
 23. The light detecting deviceaccording to claim 22, wherein the first vertical gate electrode and thesecond vertical gate electrode extend through the first surface of thephotoelectric conversion region via the gate insulating film.
 24. Anelectronic apparatus, comprising: an optical lens system; a lightdetecting device, comprising: a semiconductor substrate; a photoelectricconversion region disposed in the semiconductor substrate; a firstvertical gate electrode disposed in the semiconductor substrate, whereinat least a part of the first vertical gate electrode overlapping thephotoelectric conversion region in a plan view; a second vertical gateelectrode disposed in the semiconductor substrate, wherein at least apart of the second vertical gate electrode overlapping the photoelectricconversion region in the plan view; and a floating diffusion regiondisposed in the semiconductor substrate, electrically connected to thetransfer transistor, wherein the first vertical gate electrode and thesecond vertical gate electrode are configured to transfer a chargegenerated in the photoelectric conversion region to the floatingdiffusion region; and a signal processing device which processes outputsignals from the light detecting device.
 25. The electronic apparatusaccording to claim 24, further comprising a gate insulating film formedon a first surface of the semiconductor substrate, wherein floatingdiffusion region is in contact with each of the first vertical gateelectrode and the second vertical gate electrode through the gateinsulating film.
 26. The electronic apparatus according to claim 25,wherein each of the first vertical gate electrode and the secondvertical gate electrode is in contact with a first side of the gateinsulating film.
 27. The electronic apparatus according to claim 26,wherein the floating diffusion region is formed on a second side of thegate insulating film opposite the first side of the gate insulatingfilm.
 28. The electronic apparatus according to claim 27, wherein thefloating diffusion region is provided between the second side of thegate insulating film and the photoelectric conversion region.
 29. Theelectronic apparatus according to claim 24, wherein the first verticalgate electrode and the second vertical gate electrode are providedaround a peripheral portion of the photelectric conversion region. 30.The electronic apparatus according to claim 24, wherein the floatingdiffusion region is provided within a corner portion of the photelectricconversion region and an isolation region of the semiconductorsubstrate.
 31. The electronic apparatus according to claim 24, whereinthe floating diffusion region is provided completely within thephotoelectric conversion region.
 32. The electronic apparatus accordingto claim 25, wherein the first vertical gate electrode and the secondvertical gate electrode extend through a first surface of thephotoelectric conversion region.
 33. The electronic apparatus accordingto claim 32, wherein the first vertical gate electrode and the secondvertical gate electrode extend through the first surface of thephotoelectric conversion region via the gate insulating film.